Role of temperature and gas-chemistry in micro-masking of InP by ICP etching

Karouta, F.; Docter, B.; Geluk, E.J.; Sander-Jochem, Mjh; Tol, J.J.G.M. van der; Smit, M.K.

doi:10.1109/leos.2005.1548344

Cited by 2 publications

(1 citation statement)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore the formation of the nanowires is a result of a nanoscale self-masking phenomenon and deserves careful analysis. Similar “grassy” phenomena were usually treated as an unwanted side effect, and only recently similar grass structures on silicon have been studied for enhanced optical absorption . InP grass structures were observed when InP substrates were etched by chlorine (Cl 2 )-based gas mixtures, due to the “micromask” effect from indium chloride, a low-volatility reaction product .…”

mentioning

confidence: 99%

A Top-down Approach to Fabrication of High Quality Vertical Heterostructure Nanowire Arrays

et al. 2011

View full text Add to dashboard Cite

We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20−40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top-down, mask-free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom-up approach, significantly expanding ranges and varieties of applications of nanowire technology.

show abstract

mentioning

confidence: 99%