Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices

Schönhals, Alexander; Rosário, Carlos M. M.; Hoffmann‐Eifert, Susanne; Waser, Rainer; Menzel, Stephan; Wouters, Dirk J.

doi:10.1002/aelm.201700243

Cited by 25 publications

(21 citation statements)

References 53 publications

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“…Further proof is required to discuss whether the trapping/detrapping at the Pt/ZTO interface [15] or the ionic motion (oxygen exchange with the platinum) [14] is the dominant mechanism. Besides the 2D RS mode, the devices also worked in a filamentary VCM-type resistive switching mode (1D RS) controlled by intrinsic dopants such as oxygen vacancies (temperature coefficient of resistance at the LRS: 6.5 × 10 −4 K −1 ).…”

Section: Resultsmentioning

confidence: 99%

“…The direction of the switching loops is opposite to 1D RS and 3D RS, that is, eight‐wise (8w) when the bias is applied to the current blocking electrode. Frequently, 2D volatile switching has been observed as a secondary process, affecting the high resistive state (HRS) of an otherwise 1D RS device . In addition, the choice between digital and analog operation modes by different device initialization schemes has been reported for NiO‐based devices .…”

Section: Introductionmentioning

confidence: 99%

“…[11,12] This can be referred to as 3D RS. [14][15][16][17] In addition, the choice between digital and analog operation modes by different device initialization schemes has been reported for NiO-based devices. [13] Another type of area-dependent RS exists when ions are exchanged (or trapping occurs at the interface) between the switching matrix and the electrode.…”

mentioning

confidence: 99%

“…[14][15][16][17] In addition, the choice between digital and analog operation modes by different device initialization schemes has been reported for NiO-based devices. The direction of the switching loops is opposite to 1D RS and 3D RS, that is, eightwise (8w) when the bias is applied to the current blocking electrode.…”

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confidence: 99%

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2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Branca

Deuermeier

Martins

et al. 2019

Adv Elect Materials

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of less destructive switching events, since the device reliability is independent of the reproducibility of the filament formation. [6] Frequently, an analog switching is observed, which is applicable for neuromorphic systems. [7][8][9][10] Reports exist in the literature, which explore area-dependent switching involving the homogeneous migration of defects or ions through the thickness of the switching matrix. [11,12] This can be referred to as 3D RS. In a device with asymmetric electrodes, both 1D RS and 3D RS result in counter eightwise (c8w) switching loops, when the bias is applied to the current blocking electrode. [13] Another type of area-dependent RS exists when ions are exchanged (or trapping occurs at the interface) between the switching matrix and the electrode. If the current transport through this interface is modulated as a consequence of the ion exchange/trapping, then this can be referred to as 2D RS. The direction of the switching loops is opposite to 1D RS and 3D RS, that is, eightwise (8w) when the bias is applied to the current blocking electrode. Frequently, 2D volatile switching has been observed as a secondary process, affecting the high resistive state (HRS) of an otherwise 1D RS device. [14][15][16][17] In addition, the choice between digital and analog operation modes by different device initialization schemes has been reported for NiO-based devices. [18] However, the resistance window for the analog mode was below one order of magnitude and the mechanism was discussed as 3D RS.Both in 3D RS and 2D RS, the active interface represents a barrier to the current flow, for example, a Schottky junction. [19] In the case of Ti/Pr 0.7 Ca 0.3 MnO 3 (PCMO) devices the underlying mechanism is based on a redox reaction between the titanium oxide interlayer and the PCMO. [20,21] In oxide-based devices with a platinum Schottky barrier bottom electrode, electronic trapping at interface states was proposed as a mechanism. [15] To allow a sizeable data retention, structural stabilization of the trapped charge needs to occur. [22] To achieve a high ratio between HRS and low resistance state (LRS) in 3D and 2D RS, a highly mobile Fermi level, that is, a highly variable charge carrier concentration is desirable. In thin-film transistors (TFT), AOS are known to yield tremendously high on/off ratios. [23] Diodes of AOS have rectification ratios of 10 6 . [24] These applications show how the material is able to change from an insulator to a metallic conductor by A room-temperature-processed resistive switching Schottky diode that can be operated in two distinct modes, depending solely on the choice of device initialization mode, is presented. Electroforming in the diode's reverse polarity leads to an abrupt filamentary switching with inherently long data retention at the expense of rectification. After this electroforming process, the devices may work in either a bipolar or unipolar manner with a resistance window of at least two orders of magnitude. Device initialization in the forward direction shows a smoo...

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Branca

Deuermeier

Martins

et al. 2019

Adv Elect Materials

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“…Generally speaking, the RS mechanism of RRAMs is very complicated due to the coupled electronic and ionic dynamics. It can be influenced by the electrode materials, switching materials, device micro/macro structures, temperature, operation mode, and so on. The RS mechanisms are usually classified into electrochemical mechanism (ECM, Figure A), valence‐change mechanism (VCM, Figure B), and thermochemical mechanism (TCM, Figure C).…”

Section: High‐speed and Scalable Rram Cells And Systemsmentioning

confidence: 99%

Memory materials and devices: From concept to application

Zhang

Wang

Shi

et al. 2020

InfoMat

211

142

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Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology. As is well known, better data storage is mostly achieved by miniaturization. However, as the size of the memory device is reduced, a series of problems, such as drain gate‐induced leakage, greatly hinder the performance of memory units. To meet the increasing demands of information technology, novel and high‐performance memory is urgently needed. Fortunately, emerging memory technologies are expected to improve memory performance and drive the information revolution. This review will focus on the progress of several emerging memory technologies, including two‐dimensional material‐based memories, resistance random access memory (RRAM), magnetic random access memory (MRAM), and phase‐change random access memory (PCRAM). Advantages, mechanisms, and applications of these diverse memory technologies will be discussed in this review.

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Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering

Shahrabi

Giovinazzo

Hadad

et al. 2019

Adv Elect Materials

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Tungsten (W) is one of the most promising materials to be used in resistive random‐access memory electrodes due to its low work function and compatibility with semiconductors, which raises the possibility of device integration, scalability, and low power consumption. However, W has multiple oxidation states that affect device reliability, due to the formation of semistable oxides at the switching interface. W chemical interaction is modulated through the insertion of Al2O3 or Ti interfacial layers. The time‐dependent switching kinetics are investigated in transient Set/Reset operations. It is observed that a compact and stoichiometric atomic‐layer‐deposited Al2O3 barrier layer completely prevents W oxidation, resulting in a sharp current transient. The use of a sputtered Ti buffer layer allows a partial W oxidation, defining a tunable high‐resistance state by pulse rise time control. Notable improvements in endurance, power consumption, resistance state stabilization, and cycle‐to‐cycle and device‐to‐device variability are reported. Switching kinetics and conductive nanofilament evolution are studied in detail to understand the microscopic effect of the interface modifications. The tunability of multi‐HRS states by pulse timing control in Pt/HfO2/Ti/W is in the interest of network and brain‐inspired computing applications, adding a degree of freedom in the modulation of its resistance.

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Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices

Cited by 25 publications

References 53 publications

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Memory materials and devices: From concept to application

Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering

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