NVM). Of those, redox-based resistive switching memory [2] (ReRAM) is of high interest, in particular for application in new storage class memory, [3,4] as well as a technology for scaled embedded NVM. [5][6][7] Recent results regarding switching speed, [8] cycling endurance, [9] scalability, [10] and integration [11] indicate an outstanding potential of metal-oxide based ReRAM technology for the above mentioned memory applications. Additionally, scenarios for use of ReRAM devices in novel application fields as neuromorphic computing or logic-in-memory have been demonstrated recently. [12,13]

A detailed study of the electrical transport in TaOx thin films with x ∼ 1 provides an insight into the conduction in conductive filaments inside Ta2O5-based resistive switching devices.

No abstract