Role of thermal expansion matching in CdTe heteroepitaxy on highly lattice-mismatched substrates

Atomic-Scale Characterization of II–VI Compound Semiconductors

“…Later growth strategies involved different approaches to substrate preparation as well as periodic annealing cycles that were intended to enhance dislocation interactions and annihilation. 20 High-resolution electron micrographs 21 of the CdTe(211)B/ZnTe/Si interface region, such as that shown in Fig. 5, reveal many short, inclined {111}-type stacking faults and twinning defects, while electron diffraction patterns (inset) show slight rotation angles ($3.5°) between the CdTe/Si lattice planes, which is similar to the example of the ZnTe(211)/Si(211) heterostructure shown in Fig.…”

Effect of free-carrier concentration and optical injection on carrier lifetimes in undoped and iodine doped CdMgTe/CdSeTe double heterostructures grown by molecular beam epitaxy

“…The shift expected in the PL peak due to thermal stress from the lattice mismatch between the CdSeTe layer and InSb substrate, as the wafer cools from growth to ambient temperature should be the same in all samples. To estimate PL peak shift, the thermal stress in films due to lattice expansion mismatch is calculated [30] using where and thermal expansion coefficients for InSb substrate [31] and CdTe film [32] respectively, E is the elastic modulus of a film,  is the Poisson ratio, and T g ~ 560 C is the growth temperature. Using the pressure induced band coefficient of ~7 meV/GPa [33] a rough estimate of the stress induced shift of < 2 meV is Page 12 of 28 AUTHOR SUBMITTED MANUSCRIPT -JPhysD-109617.…”

Mechanical and Thermal Properties

“…By considering literature reports prior to 1987, Brice [22] Brice [22] Higgins et al [3] (Eqn. (8.16)) Wolleey and Ray [24] Bell and Sen [5] Song et al [25] Tanaka et al [26] Johnson et al [27] Di Marzio [28] (MBE) Jacobs et al [29] The inset magnifies the region indicated by the dotted boundary composition x and concluded that Vegard's law is approximately followed. In this correlation, samples are grouped according to their stoichiometry.…”