Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

Liu, Fayang; Zhou, Yuheng; Yang, Huan; Zhou, Xiaoliang; Zhang, Xiaohui; Li, Guijun; Zhang, Meng; Zhang, Shengdong; Lü, Lei

doi:10.1109/led.2021.3133011

Cited by 6 publications

(4 citation statements)

References 29 publications

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“…Hot carriers collide violently in lattices, resulting in a large number of defect states. The interaction between hot carrier injection and the self-heating effect exists in this region. − For TFT-4, the semiconductor layer in the G–S overlap region is located above the source electrode. Due to the shielding effect of the electrode on the electric field, the amount of induced charge of the semiconductor in the overlap part is very small.…”

Section: Resultsmentioning

confidence: 99%

The Hump Phenomenon and Instability of Oxide TFT Were Eliminated by Interfacial Passivation and UV + Thermal Annealing Treatment

Li,

Yao,

Zhong

et al. 2023

ACS Appl. Electron. Mater.

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In this work, we propose a simple and efficient interfacial modification method for thin-film transistor (TFT)-1 with poor stability under bias stress. For conventional top-contact TFT-2, the sputtering passivation layer will cause the device to be in a short-circuit condition. We used inverted coplanar-structured TFT-3 to separate the high conductivity layer from the S/D electrodes to avoid the short-circuit failure of the device, but this will cause a hump effect. Ultraviolet treatment and air annealing were performed on TFT-3 simultaneously to obtain TFT-4 with high mobility (μsat = 45.5 cm2 V–1 s–1), steep subthreshold swing (SS = 86 mV/dec), and good bias stability (±20 V, 3600 s, NBS: −0.1 V, PBS: +0.9 V, PGDBS: +0.5 V). The forward and reverse tests of TFT-1 and TFT-4 after the PGDBS test show that TFT-4 has a good stability of the asymmetric electrical bias. Finally, XRR, XPS, AFM, and contact angle were tested to further investigate the material mechanisms. In this paper, we show that the interfacial passivation of TFT can effectively isolate the invasion of external water/oxygen and compensate for interfacial defects and dangling bonds. The decomposition and rearrangement of the oxide are induced by UV + thermal annealing, which optimizes the stacking pattern of the cells, effectively reducing the defect states and eliminating parasitic channels and the hump phenomenon. Finally, an amorphous oxide semiconductor (AOS)-TFT instrument with high mobility and good stability is prepared. The method in this paper addresses the problem that the passivation layer cannot be prepared by sputtering, which is a cost-effective process.

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Section: Resultsmentioning

confidence: 99%

The Hump Phenomenon and Instability of Oxide TFT Were Eliminated by Interfacial Passivation and UV + Thermal Annealing Treatment

Li,

Yao,

Zhong

et al. 2023

ACS Appl. Electron. Mater.

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“…[6][7][8] As the most representative AOS, amorphous indium-gallium-zinc oxide (a-IGZO) has successfully initiated the industrialization of AOS by replacing its silicon counterpart in the thin-film transistor (TFT) backplane of highend displays. [9] Besides TFTs, various AOS-based electronic devices have been developed, such as phototransistors, [10] photodiodes, [11] synaptic transistors, [12] memristors, [13,14] Schottky barrier diodes (SBDs), [15][16][17][18][19][20][21] metal-semiconductor fieldeffect transistors (MESFETs), [22][23][24][25] and source-gated transistors (SGTs). [26] The metal-AOS contacts play critical roles in these semiconductor devices, while the Schottky contact is much more challenging than Ohmic contact due to the abundant native defects in AOSs, [27][28][29] such as oxygen vacancy (V O ) and metal interstitial (Mi).…”

Section: Introductionmentioning

confidence: 99%

Defect‐Hydrogen Interactions in Top‐Anode Oxide Semiconductor Schottky Barrier Diode

Liu

Pan

Zheng

et al. 2023

Adv Materials Technologies

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As amorphous oxide semiconductors (AOSs) are hotly pursued for advanced displays, flexible electronics, optoelectronics, and neuromorphic systems, the AOS Schottky barrier diodes (SBDs) have been tried only using the mainstream amorphous InGaZnO (a‐IGZO) and the conservative bottom‐anode structure. To deepen the study on AOS SBDs, the more challenging top‐anode SBD is developed in this work using a versatile but vulnerable AOS, amorphous InZnO (a‐IZO). Unsurprisingly, the Schottky interface defects are seriously increased by the top‐anode process and the defective a‐IZO, which cannot be effectively passivated using the incumbent oxidizing treatments. The hydrogenation is proposed to considerably suppress these annoying interface defects and thus correspondingly reduces the large leakage current, while the hydrogen doping easily deteriorates a‐IGZO SBD. The underlying mechanism of such distinction is revealed to be the tricky interactions between defect and hydrogen in AOSs. Based on the sophisticated utilization of such defect‐hydrogen interplay, the a‐IZO/a‐IGZO stack is hydrogenated together to simultaneously realize a high‐conductivity bulk and low‐defect interface, noticeably enhancing the performance metrics. Such top‐anode SBD based on hydrogenated multilayer AOSs successfully blazes a novel evolution path for AOS SBDs.

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“…Besides the superior switching characteristics, the high-current driving capability of AOS TFTs is increasingly demanded by advanced applications, such as the gate driver on the array (GOA), electroluminescence, and micro-LED displays [5−7] . So far, the AOS TFTs under high current stresses (HCSs) have encountered complicated severe degradation behaviors, such as threshold voltage (V th ) shift [8] , abnormal hump [9,10] , subthreshold swing (SS) deterioration [11] , and even hard breakdown [12] .…”

Section: Introductionmentioning

confidence: 99%

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

Wang,

Li,

Liu

et al. 2023

J. Semicond.

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As growing applications demand higher driving currents of oxide semiconductor thin-film transistors (TFTs), severe instabilities and even hard breakdown under high-current stress (HCS) become critical challenges. In this work, the triggering voltage of HCS-induced self-heating (SH) degradation is defined in the output characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) TFTs, and used to quantitatively evaluate the thermal generation process of channel donor defects. The fluorinated a-IGZO (a-IGZO:F) was adopted to effectively retard the triggering of the self-heating (SH) effect, and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F. The proposed scheme noticeably enhances the high-current applications of oxide TFTs.

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Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

Cited by 6 publications

References 29 publications

The Hump Phenomenon and Instability of Oxide TFT Were Eliminated by Interfacial Passivation and UV + Thermal Annealing Treatment

The Hump Phenomenon and Instability of Oxide TFT Were Eliminated by Interfacial Passivation and UV + Thermal Annealing Treatment

Defect‐Hydrogen Interactions in Top‐Anode Oxide Semiconductor Schottky Barrier Diode

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

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