No abstract

The low–temperature poly–Si oxide (LTPO) backplane is realized by monolithically integrating low–temperature poly–Si (LTPS) and amorphous oxide semiconductor (AOS) thin–film transistors (TFTs) in the same display backplane. The LTPO–enabled dynamic refreshing rate can significantly reduce the display’s power consumption. However, the essential hydrogenation of LTPS would seriously deteriorate AOS TFTs by increasing the population of channel defects and carriers. Hydrogen (H) diffusion barriers were comparatively investigated to reduce the H content in amorphous indium–gallium–zinc oxide (a–IGZO). Moreover, the intrinsic H–resistance of a–IGZO was impressively enhanced by plasma treatments, such as fluorine and nitrous oxide. Enabled by the suppressed H conflict, a novel AOS/LTPS integration structure was tested by directly stacking the H–resistant a–IGZO on poly–Si TFT, dubbed metal–oxide–on–Si (MOOS). The noticeably shrunken layout footprint could support much higher resolution and pixel density for next–generation displays, especially AR and VR displays. Compared to the conventional LTPO circuits, the more compact MOOS circuits exhibited similar characteristics.

No abstract

The degradation and breakdown behaviors of top-gate self-aligned a-InGaZnO thin-film transistors (TFTs) under dynamic current stresses (DCSs) were systematically investigated. Both linear-and saturation-regime DCSs were found to be capable of causing the self-heating degradations, including the negative shift of threshold voltage, the increase of subthreshold slope and drain current. While the linear DCS eventually forms a conductor-like channel, the saturation DCS causes an additional hot carrier (HC) effect to form a defective drain regions of high energy barrier, disconnecting the 'conductor channel' from the drain side.