Roll-to-roll gravure printed large-area flexible carbon nanotube synaptic photogating transistor arrays for image recognitions

Wang, Suyun; Wang, Qinan; Li, Min; Fang, Yuxiao; Shao, Shuangshuang; Xie, Tanghao; Zhao, Chun; Liang, Lijuan; Zhao, Jianwen

doi:10.1016/j.nanoen.2023.108698

Cited by 11 publications

(4 citation statements)

References 67 publications

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“…This results in more ions accumulating at the gate dielectric and channel surfaces, leading to larger EPSC. [57,[61][62][63] Figure 2f displays the EPSC response after applying 50 presynaptic pulses (pulse width of 50 ms, V G = 1 V, V DS = 0.4 V) to the synaptic transistor. It is observed that the amplitude of the subsequent EPSC is higher than that of the previous one.…”

Section: The Electrical and Synaptic Performance Of Egtsmentioning

confidence: 99%

Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning

Zhang,

Li,

et al. 2024

Small Science

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Compute‐in‐memory (CIM) is a pioneering approach using parallel data processing to eliminate traditional data transmission bottlenecks for faster, energy‐efficient data handling. Crossbar arrays with two‐terminal devices such as memristors and phase‐change memory are commonly employed in CIM, but they encounter challenges such as leakage current and increased power usage. Three‐terminal transistor arrays have potential solutions, yet large‐scale electrolyte‐gated transistors (EGTs) demonstrations are uncommon due to compatibility issues with existing photolithography processes. Herein, a 20 × 20 EGTs array is designed using indium‐gallium‐zinc‐oxide as the semiconductor channel and polyacrylonitrile (PAN) doped with C2F6LiNO4S2 as the electrolyte. Each transistor unit in the array can serve as a synapse, exhibiting a large conductance range, low energy consumption (6.984 fJ) for read–write operations, excellent repeatability, and quasilinear update characteristics. It has been confirmed that the EGTs array not only enables precise device programming but also virtually eliminates signal interference between neighboring devices during the programming process. Using 54 transistors in the EGTs array, unsupervised learning with a winner‐takes‐all neural network is successfully demonstrated. After 50 training iterations, the neural network achieves perfect 100% accuracy in classifying test‐set letters. The work demonstrates the potential of EGTs for constructing large‐scale integration synaptic array toward efficient computing architectures.

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Section: The Electrical and Synaptic Performance Of Egtsmentioning

confidence: 99%

Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning

Zhang,

Li,

et al. 2024

Small Science

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“…In recent years, extensive research has been undertaken to explore the potential of the printing process for fabricating cost-effective, large-area electronic circuits and devices on flexible electronic substrates 1 . Various methods have been explored, including screen printing 2 , 3 , inkjet printing 4 – 6 , roll-to-roll printing 7 – 9 , gravure printing 10 , 11 , and aerosol printing 12 – 14 . Given the intricate requirements of the printing process for electronic devices, such as organic light-emitting diodes and thin-film transistors which often involve multi-layered structures, precise control over layer sizes and placements is essential 15 – 17 .…”

Section: Introductionmentioning

confidence: 99%

Optimization of process parameters in micro-scale pneumatic aerosol jet printing for high-yield precise electrodes

Jeong,

Lee,

Kim

et al. 2023

Sci Rep

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Aerosol jet printing (AJP) is a new non-contact direct writing technique designed to achieve precise and intricate patterns on various substrates. Specifically, the pneumatic AJP process breaks down the ink into fine particles, significantly reducing the risk of nozzle clogging and rendering it highly advantageous for industrial applications. This paper focuses on the optimization of the line electrode formation process using soluble silver clusters as the conductive ink, along with the aerosol formation procedure. The main parameters of the AJP process, namely sheath flow rate, atomizer flow rate, and dispensing speed, were identified and examined for their influence on line width and resistivity. Through this analysis, an operability window, including optimized conditions for printing high-quality lines using the AJP process, was established, along with a regression equation enabling the statistical estimation of line width. In summary, the outcomes of this investigation underscore the feasibility of an integrated printing system capable of precision control over line width, achieved through the optimization of AJP process parameters. Furthermore, it was established that pneumatic AJP offers robust process stability. The practical applicability of the proposed optimization techniques was assessed, highlighting their potential utilization in electrode formation processes within the electronic and display industry.

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“…However, these methods often need a complicated fabrication process, and as-prepared transistor devices exhibit a small threshold voltage modulation window and low fault tolerance, hindering their large-scale integration in integrated circuits and neuromorphic chip. Additionally, due to the adsorption behavior of carbon nanotubes, − exposure to light and so on, , SWCNT transistor devices may still exhibit depletion mode, as the threshold voltage tuning window is limited. Therefore, it is necessary to develop synaptic transistor devices with a broader threshold voltage tuning window and high fault tolerance in diverse manufacturing scenarios, enabling an ultralow power consumption artificial vision system.…”

mentioning

confidence: 99%

“…The SWCNT artificial optoelectronic synaptic transistors with excellent photoresponse properties can be achieved by constructing heterojunction structures between SWCNT and photosensitive materials due to the significant enhancement of exciton dissociation . For example, various photosensitive materials including dyes, chlorophyll, and photosensitive quantum dots (QDs) have been reported to construct SWCNT synaptic transistors. QDs with high photochemical stability and tunable bandgaps are regarded as an effective strategy for creating artificial synaptic devices. − However, many reported QDs have posed a potential threat to the environment during the large-scale production, highlighting the importance of developing environmentally friendly QDs synaptic devices.…”

mentioning

confidence: 99%

Enhancement-Mode Carbon Nanotube Optoelectronic Synaptic Transistors with Large and Controllable Threshold Voltage Modulation Window for Broadband Flexible Vision Systems

Wang,

Li,

Yang

et al. 2024

ACS Nano

Self Cite

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The development of large-scale integration of optoelectronic neuromorphic devices with ultralow power consumption and broadband responses is essential for highperformance bionics vision systems. In this work, we developed a strategy to construct large-scale (40 × 30) enhancementmode carbon nanotube optoelectronic synaptic transistors with ultralow power consumption (33.9 aJ per pulse) and broadband responses (from 365 to 620 nm) using low-work function yttrium (Y)-gate electrodes and the mixture of eco-friendly photosensitive Ag 2 S quantum dots (QDs) and ionic liquids (ILs)-cross-linking-poly(4-vinylphenol) (PVP) (ILs-c-PVP) as the dielectric layers. Solution-processable carbon nanotube thin-film transistors (TFTs) showed enhancement-mode characteristics with the wide and controllable threshold voltage window (−1 V∼0 V) owing to use of the low-work-function Ygate electrodes. It is noted that carbon nanotube optoelectronic synaptic transistors exhibited high on/off ratios (>10 6 ), small hysteresis and low operating voltage (≤2 V), and enhancement mode even under the illumination of ultraviolet (UV, 365 nm), blue (450 nm), and green (550 nm) to red (620 nm) pulse lights when introducing eco-friendly Ag 2 S QDs in dielectric layers, demonstrating that they have the strong fault-tolerant ability for the threshold voltage drifts caused by various manufacturing scenarios. Furthermore, some important bionic functions including a high paired pulse facilitation index (PPF index, up to 290%), learning and memory function with the long duration (200 s), and rapid recovery (2 s). Pavlov's dog experiment (retention time up to 20 min) and visual memory forgetting experiments (the duration of high current for 180 s) are also demonstrated. Significantly, the optoelectronic synaptic transistors can be used to simulate the adaptive process of vision in varying light conditions, and we demonstrated the dynamic transition of light adaptation to dark adaptation based on lightinduced conditional behavior. This work undoubtedly provides valuable insights for the future development of artificial vision systems.

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Roll-to-roll gravure printed large-area flexible carbon nanotube synaptic photogating transistor arrays for image recognitions

Cited by 11 publications

References 67 publications

Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning

Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning

Optimization of process parameters in micro-scale pneumatic aerosol jet printing for high-yield precise electrodes

Enhancement-Mode Carbon Nanotube Optoelectronic Synaptic Transistors with Large and Controllable Threshold Voltage Modulation Window for Broadband Flexible Vision Systems

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