Röntgenographische Untersuchungen an den Systemen MgOCuO und NiOCuO

Abstract

Es wird über Untersuchungen mit dem Zählrohrgoniometer an den Systemen MgOCuO und NiOCuO berichtet. Die Löslichkeitsgrenzen bei 1000°C in diesen Systemen werden ermittelt. Der Einbau von CuO in MgO und NiO ist mit einer Aufweitung der Wirtsgitter verbunden, aus welcher der Ionenradius für Cu++ bestimmt wird. Eine Verbindung der Zusammensetzung Cu3MgO4 wird beschrieben.

Raman spectra in epitaxial thin films ofLa1−xCaxMnO3(Xiong1, Chen2, Wang3 et al. 2004Phys. Rev. B502232View full textAdd to dashboardCite

“…According to the XRD data, we calculated the out-of-plane lattice parameters of films and substrates and listed them in the Table I. These results are consistent with the data reported in previous references 23,30,31,32 . As shown in Table I 32 .…”

p -Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells

“…As noted above, NiO was chosen as the p-type interfacial layer. Although arguably the most studied and modeled of binary transition metal oxides, exact details of the band structure, band-gap (E g ), Fermi level (E f ), conduction band minimum (CBM), valence band maximum (VBM), and conduction mechanism continue to stimulate discussion (39,(43)(44)(45). Near-stoichiometric NiO has a room temperature conductivity of Ϸ10 Ϫ12 S/cm (45); however, Ni 2ϩ vacancies are readily formed in undoped NiO that substantially increase the conductivity (39,46), and films with conductivities of Ϸ10 Ϫ3 to 10 Ϫ4 S/cm have been reported (47).…”

“…The reported E f for undoped NiO ranges from 3.8 eV (49) to 5.4 eV (50) and has been found to depend on the deposition substrate (51) and the NiO surface treatment (49). A frequently cited value is 5.0 eV (20,23,44,52) while the valence band maximum (VBM) of undoped NiO is ϳ0.4 eV below E f (Fig. 2B) (52,53).…”

Influence of Thickness on the Metastable Ordered Phase Formation in CoPt and Co3Pt Alloy Films

“…where the lattice constants of bulk A1-Co50Pt50 (a A1-Co50Pt50 = 0.3809 nm) 22) , A3-Co80Pt20 (a A3-Co80Pt80 = 0.257 nm, c A3-Co80Pt80 = 0.4189 nm) 23) , and MgO (a MgO = 0.4211 nm) 24 26) , and CoFe/MgO 27) systems. The CoPt and the Co3Pt films prepared in the present study also seem to follow the growth mode.…”