Room and low temperature study of common emittercurrent gainin AlGaN/GaN heterojunction bipolar transistors

Huang, JianJang; Caruth, D.; Feng, Milton; Lambert, Damien; Shelton, B. S.; Wong, M. M.; Chowdhury, U.; Zhu, Ting; Kwon, Ho Ki; Dupuis, R. D.

doi:10.1049/el:20010263

Cited by 8 publications

(2 citation statements)

References 11 publications

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“…The small signal RF performance of AlGaN/GaN HBTs was also measured here, having a common emitter current gain cutoff frequency of 2 GHz with an input carrier density of over 2.7 kA cm −2 . Both npn and pnp HBTs have been fabricated with emitter contact diameters in the range of 20-200 mm and DC current gains of 3-20 have been reported from the common-emitter or common-base mode and Gummel plots [50][51][52][53][54][55][56][57][58][59][60][61][62].…”

Section: (Al)gan Hbtsmentioning

confidence: 99%

Gallium nitride based transistors

Xing

Keller

Wu³

et al. 2001

J. Phys.: Condens. Matter

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An overview is presented of progress in GaN electronic devices along with recent results from work at UCSB. From 1995 to 2001, the power performance of AlGaN/GaN high electron mobility transistors (HEMT) improved from 1.1 to 11 W mm-1, respectively. The disadvantage of the low thermal conductivity of the sapphire substrate was mitigated by flip-chip bonding onto AlN substrates, yielding large periphery devices with an output power of 7.6 W. A variety of HEMT amplifier circuits have been demonstrated. The first AlGaN/GaN heterojunction bipolar transistor (HBT) was demonstrated in 1998, with a current gain of about 3. By developing the technique of emitter regrowth, a current gain of 10 was achieved in both GaN BJTs and AlGaN/GaN HBTs. A common emitter current gain cutoff frequency of 2 GHz was measured. Critical issues involved in the growth of high quality AlGaN/(AlN)/GaN heterostructures and GaN:Mg by metal-organic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE) and the device fabrication are discussed.

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Section: (Al)gan Hbtsmentioning

confidence: 99%

Gallium nitride based transistors

Xing

Keller

Wu³

et al. 2001

J. Phys.: Condens. Matter

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“…There is a strong interest in the research and development of GaN-based HBTs in recent years. Some groups have demonstrated the feasibility of this device and have achieved some impressive results [1][2][3], but there are many limitations in the growth and fabrication of GaN-based HBTs. In a vertical device structure like a HBT, accurately doping control is a important factor to get good device properties, because the doping concentration in each layer has a great effect on the device properties such as current gain, cutoff frequency and breakdown voltage.…”

Section: Introductionmentioning

confidence: 99%

The difference of Si doping efficiency in GaN and AlGaN in GaN‐based HBT structure

Ran

Wang

et al. 2006

Phys. Status Solidi (c)

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An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH 4 ) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy.

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