Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition

Abstract

Articles you may be interested inComplete suppression of large InAs island formation on GaAs by metal organic chemical vapor deposition with periodic As H 3 interruption Appl. Phys. Lett. 90, 033105 (2007); 10.1063/1.2432285 Charged exciton emission at 1.3 μ m from single InAs quantum dots grown by metalorganic chemical vapor deposition Appl. Photopumped red-emitting InP/In 0.5 Al 0.3 Ga 0.2 P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition Appl. Phys. Lett. 78, 4091 (2001); 10.1063/1.1382622 Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

“…Ground-state lasing at RT, high internal quantum efficiency, and low threshold current density have already been demonstrated in both stacked-layer [2]- [5] and single-layer QD lasers [6], [7]. Efficient [8] and narrow-linewidth [9] RT emission at 1.3-m wavelength has been achieved recently, and the first QD lasers operating in this wavelength region are already reported [10]- [13]. Other properties, like differential gain, small signal modulation bandwidth, and alpha parameter, are still under discussion in the comparison between the expected superior performances and the measured values.…”

Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

“…Only a few works have shown luminescence and electroluminescence at 1.3 m in QDs fabricated by MOCVD. [5][6][7] A variety of theoretical 8 and experimental 9 studies have recently reported the existence of a permanent electron-hole dipole moment in a QD, which is related to the built-in strain field inside the dots. The permanent dipole is sensitive to the detailed structure of the dots, which is strictly related to the growth conditions.…”

Wavelength control from 1.25 to 1.4 μm in InxGa1−xAs quantum dot structures grown by metal organic chemical vapor deposition

“…10 Very few works report emission wavelength near 1.3 m in binary QDs fabricated by metal organic chemical vapor deposition ͑MOCVD͒. 11 In this letter, we target the optimization and the tuning of the emission wavelength of InGaAs QDs grown by MOCVD in the strategic wavelength range of 1.3 m. The QD structures solely based on InGaAs/GaAs, optimized for device applications ͑i.e., with high density, narrow size dispersion, and efficient room temperature emission͒ can be tuned only up to 1.29 m without reaching the exact value of 1.3 m. Instead, by inserting the same QD structure ͑fabricated with the same MOCVD growth parameters͒ into an In x Ga (1Ϫx) As layer, the emission wavelength can be extended up to 1.39 m.…”