Room temperature AlGaAs/GaAs quantum cascade lasers

Abstract

Abstract-The room temperature (293K), pulsed mode operation of a GaAs-based quantum cascade laser (QCL) is reported. This has been achieved by the use of GaAs/Al 0.45 Ga 0.55 As heterostructure. Its design follows an "anticrossed-diagonal" scheme. The QCL structures were grown by MBE in a Riber Compact 21T reactor. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and Si 3 N 4 for electrical insulation. Double plasmon confinement with Al-free waveguide has been used to minimize absorption losses. High operating temperatures have been achieved by careful optimization of growth technology and using metallic high reflectivity facet coating on the back facet of the laser.

Proton implantation for the isolation of AlGaAs/GaAs quantum cascade lasers

“…The structure used a double-plasmon Al-free waveguide for planar optical confinement. A detailed description of the relevant MBE-growth procedures can be found in [15][16][17]. The principle of the operation of the QCLs requires strictly determined thicknesses and compositions of individual layers as well as overall periodicity of the whole structure.…”