Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

Abstract

This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co 2+ and Ga 3+ ions substitute for Zn 2+ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

Ferromagnetism in ZnO with (Mn,Li) codoping

“…These properties have stimulated extensive studies of TM (Cr, Mn, Fe, Co, Ni, Cu) doped ZnO. [2][3][4][5][6] Nonmetal elements can also result in ferromagnetism in ZnO. [7,8] However, theoretical conclusions cannot explain such phenomena observed in experiments and the origin of the FM has not been well understood.…”

Effect of vanadium on the room temperature ferromagnetism of V-doped 6H—SiC powder

“…[1] In the past few years, some studies have shown that SiC can also be a good candidate for a dilute magnetic semiconductor (DMS) which has attracted wide interest in the application prospect of spintronic devices. [2][3][4][5][6] Up to now, the ferromagnetism (FM) has been found or calculated in 3C, [7,8] 4H, [9][10][11] and 6H-SiC [12][13][14] polytypes, including undoped, transition-metal doped, nontransition-metal doped and codoped SiC systems.…”

Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Γ critical point

“…Manganese is one of the most intensively investigated transition-metal impurities [1,2] in GaAs semiconductors. Many experimental techniques, including electron spin resonance, [3] infrared absorption spectroscopy, [4] and magnetization measurements, [5] have proved that the substitution of manganese (Mn) on a Ga site forms an A 0 Mn (d 5 + hole)-type acceptor centre in Mn-doped GaAs.…”

“…The Hamiltonian (1) is valid for a crystal with a diamond structure and in the limit of strong spin-orbit splitting at the Γ point. In the case of a zinc-blende crystal such as GaAs, terms linear in p should be added to Hamiltonian (1). However, as becomes clear later, the contribution to the binding energy from these terms is very small and therefore negligible.…”