Room Temperature Broadband Infrared Carbon Nanotube Photodetector with High Detectivity and Stability

Yang, Ling; Wei, Nan; Zeng, Qingsheng; Han, Jie; Huang, Huixin; Zhong, Donglai; Wang, Fanglin; Ding, Li; Xia, Junchao; Xu, Haitao; Ma, Ze; Qiu, Song; Li, Qingwen; Liang, Xuelei; Zhang, Zhiyong; Wang, Sheng; Peng, Lian‐Mao

doi:10.1002/adom.201500529

Cited by 97 publications

(80 citation statements)

References 36 publications

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that of conventional narrow-bandgap semiconductors, which enable SWCNTs to be used in semitransparent or transparent photodetectors with thinner active materials. [3,10,11] Compared with the former two types, the SWCNT film/networks favor the largescale fabrication of high-performance photodetectors with low-cost due to their simple process, high optical absorption, and good device reliability. [3,10,11] Compared with the former two types, the SWCNT film/networks favor the largescale fabrication of high-performance photodetectors with low-cost due to their simple process, high optical absorption, and good device reliability.

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confidence: 99%

Highly Sensitive Broadband Single‐Walled Carbon Nanotube Photodetectors Enhanced by Separated Graphene Nanosheets

Cai

Tao

et al. 2018

Advanced Optical Materials

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that of conventional narrow-bandgap semiconductors, which enable SWCNTs to be used in semitransparent or transparent photodetectors with thinner active materials. [7] In addition, it has been theoretically and experimentally demonstrated that multiple electron-hole pairs can be generated from one high-energy photon in S-SWCNTs, [8,9] which provides the possibility for fabricating high performance photoelectronic devices.Apart from the different device architectures, the SWCNT-based photodetectors have been extensively investigated using different nanotube types as a light absorber, such as individual SWCNT, aligned SWCNT arrays, SWCNT networks, and SWCNT films. [3,10,11] Compared with the former two types, the SWCNT film/networks favor the largescale fabrication of high-performance photodetectors with low-cost due to their simple process, high optical absorption, and good device reliability. To improve the performance of SWCNT-based photodetectors, low-dimensional carbon allotropes are widely used to form all-carbon heterojunctions with SWCNTs due to the intimate electronic coupling between the two sp 2 -hybridized carbon allotropes. [12] In addition, the devices with planar structures are adopted, in which the exciton diffusion along the SWCNTs plays a major role while the exciton diffusion perpendicular to the films is suppressed. Park et al. [13] demonstrated an SWCNT/C 60 -based phototransistor with the C 60 serving as electron traps and the SWCNTs as the hole carrier. The maximum responsivity and detectivity are 97.5 A W −1 at gate voltage of −2 V and 1.17 × 10 9 Jones at 1 kHz, respectively. Except for 0D C 60 , 2D graphene has also been demonstrated to enhance significantly the carrier separation by forming the Schottky junctions with S-SWCNTs due to exceedingly high carrier mobility and thermal conductivity. [14,15] Liu et al. [3,16] demonstrate an effective charge transfer between SWCNTs and graphene in the planar nanohybrids. Zhang et al. [17] developed the SWCNT film/graphene Schottky junctions for visible-NIR photodetector. The device exhibits a fast response time of 68 µs and good reproducibility in a wide range of 50-5400 Hz. However, it is still a big challenge to further improve the performance. First, the ultrathin S-SWCNT layer means poor optical absorption, which will be difficult to meet the different application requirements. While dark current will be increased with increasing the thickness or density of SWCNTs. On the other hand, continuous graphene sheets in the planar nanohybrids give a very large dark Single-walled carbon nanotube (SWCNT)/graphene Schottky junctions have great potential for high-performance all-carbon photodetector due to their excellent optical and electronic properties and efficient charge transfer. However, the further improvement of device performance is limited by the low absorption of ultrathin SWCNTs and large dark current of continuous graphene nanosheets. Here a proof-of-concept photodetector is reported using SWCNT/separated graphene (SGR) hybrid networks. The ...

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confidence: 99%

Highly Sensitive Broadband Single‐Walled Carbon Nanotube Photodetectors Enhanced by Separated Graphene Nanosheets

Cai

Tao

et al. 2018

Advanced Optical Materials

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“…[ 120 ] Depicted in the inset of Figure 5 a is a BFBD device structure, using solution-processed CNT thin fi lm as the active channel instead of individual semiconducting CNT. Signifi cant progress was made recently by Liu et al on high-performance photovoltaic devices using solution-processed CNT fi lms by virtue of the breakthrough on solution-processed CNT purifi cation.…”

Section: High-purity Cnt-film-based Photovoltaic Devicesmentioning

confidence: 99%

Toward High‐Performance Carbon Nanotube Photovoltaic Devices

Wang

Peng

2016

Advanced Energy Materials

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PV) devices, direct-bandgap, broad spectral response, large absorption coeffi cient and fast response speed on the order of picosecond, etc. [ 4,6,12,13 ] Tremendous efforts have been made to convert the excellent intrinsic properties of CNTs into high-performance devices. Optoelectronic research has been focused mainly on nanoscale light-emitting diode (LED), photodetector, solar cell and novel physical discoveries such as two-photon absorption, multi-excitons generation, photovoltage multiplication and so on. [14][15][16][17][18][19][20] Here, the fundamental properties of CNT energy band structure and corresponding optical characteristics are reviewed. Then photovoltaic research developments of various kinds of CNT diodes, with particular emphasis on barrier-free-bipolar-diode (BFBD) devices fabricated via a dopingfree method are discussed. For pushing CNT PV devices toward applications, the status of CNT thin-fi lm-based PV devices, including recent breakthroughs made on solution-processed semiconducting CNT separation techniques, and the utilization of these materials for constructing high-performance PV diodes are discussed. The doping-free technique has been combined with virtual contacts to multiply photovoltage and thus to signifi cantly improve the performance and signal to noise ratio of PV devices. It is demonstrated that CNT PV device has a superior broadband response from visible to near infrared, high room temperature detectivity that can be compared with state-of-the-art InGaAs detectors, and extremely good temperature and temporal stability. This article will end with a discussion on the challenges that still lay ahead, and possible solutions. Basic Optical Properties of Carbon NanotubesAs shown in Figure 1 a, a CNT is composed of hexagonal honeycomb sp 2 lattice, and various chirality CNTs can be formed with different orientations relative to the tube axis, giving rise to distinct properties of either semiconducting or metallic. [ 21 ] Semiconducting CNTs have been recommended as the potential channel material for replacing silicon to extend Moore's law. [ 5 ] However, beyond Moore, it is also of great signifi cance to build high-performance optoelectronic devices and circuits. [ 12,22 ] The excellent properties of CNT stem from its basic band structure, which is signifi cant to discuss its unique physical Photovoltaic (PV) infrared (IR)-based devices are important for a variety of industrial and scientifi c applications, such as IR imaging, biological sensing, day-night surveillance and in solar cells. However, most high-end IR PV devices made of conventional semiconductors need to be cooled to achieve high performance, while these materials usually are also not stable under strong illumination. Carbon nanotubes (CNTs) are direct-bandgap materials with a broad spectral response and a large absorption coeffi cient, which is most desired for building high-performance PV devices. Main progresses on CNT PVs in the past 15 years is reviewed, emphasizing recent breakthrough of CNT IR photodetectors b...

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“…Such a dispersion comprising of (7, 5), (7,6), (8,5), (8,6), (8,7), (9,7), and (10,9) CNTs with spectrally well-separated absorption peaks ( Figure S4, Supporting Information) have been prepared and integrated into the devices as described in the Experimental Section. Such a dispersion comprising of (7, 5), (7,6), (8,5), (8,6), (8,7), (9,7), and (10,9) CNTs with spectrally well-separated absorption peaks ( Figure S4, Supporting Information) have been prepared and integrated into the devices as described in the Experimental Section.…”

mentioning

confidence: 99%

“…Figure 3b shows in analogy the energy scheme for a p-Si/ (10,9) junction. Therefore, under excitation of a (7, 5) CNT, electrons can propagate from the CNT to the Si electrode and to the high terminal, whereas holes move in the opposite direction through the CNT to the low terminal.…”

mentioning

confidence: 99%

Near‐Infrared Photoresponse of Waveguide‐Integrated Carbon Nanotube–Silicon Junctions

Riaz

Alam

Selvasundaram

et al. 2018

Adv Elect Materials

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Single‐wall carbon nanotubes (CNTs) have been recently integrated into optical waveguides and operated as on‐chip electro‐optical transducers and nonclassical light sources. Here, first steps are taken toward complementary, waveguide‐integrated optoelectrical transducers based on CNTs. Few‐chiral CNTs are deposited from solution onto silicon waveguide and silicon electrodes, to form waveguide‐integrated CNT–silicon junctions. The junctions are characterized by means of spatially and spectrally resolved photocurrent measurements. Photocurrent spectra show wavelength‐dependent photocurrent contribution from silicon and from CNTs, however with the opposite sign. This behavior is explained by the relative positions of the Si band edges and the molecular orbitals of the CNTs. In CNT/Si junctions, only small diameter (7, 5) and (7, 6) CNTs are photoactive and contribute to photocurrent. When these CNTs are excited, electrons are injected into the silicon giving rise to photocurrent, whereas photoexcited larger diameter CNTs such as (8, 6), (8, 7), and (9, 7) do not contribute because of the lowest unoccupied molecular orbital (LUMO) position being too low for exciton dissociation. On the other hand, excitation of silicon yields photocurrents flowing in the opposite direction due to contact to larger diameter CNTs having suitable highest occupied molecular orbital (HOMO)–LUMO positions. The findings are supported by photocurrent maps and reflectance measurements.

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Room Temperature Broadband Infrared Carbon Nanotube Photodetector with High Detectivity and Stability

Cited by 97 publications

References 36 publications

Highly Sensitive Broadband Single‐Walled Carbon Nanotube Photodetectors Enhanced by Separated Graphene Nanosheets

Highly Sensitive Broadband Single‐Walled Carbon Nanotube Photodetectors Enhanced by Separated Graphene Nanosheets

Toward High‐Performance Carbon Nanotube Photovoltaic Devices

Near‐Infrared Photoresponse of Waveguide‐Integrated Carbon Nanotube–Silicon Junctions

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