We have fabricated ballistic n-type carbon nanotube (CNT)-based field-effect transistors (FETs) by contacting semiconducting single wall CNTs using Sc. Together with the demonstrated ballistic p-type CNT FETs using Pd contacts, our work closes the gap for doping-free fabrication of CNT-based ballistic complementary metal-oxide semiconductor (CMOS) devices and circuits. We demonstrated the feasibility of this dopingfree CMOS technology by fabricating a simple CMOS inverter on a SiO 2 /Si substrate using the back-gate geometry, but in principle much more complicated CMOS circuits may be integrated on a CNT on any suitable insulator substrate using the top-gate geometry and high-K dielectrics. This CNT-based CMOS technology only requires the patterning of arrays of parallel semiconducting CNTs with moderately narrow diameter range, for example, 1.6−2.4 nm, which is within the reach of current nanotechnology. This may lead to the integration of CNT-based CMOS devices with increasing complexity and possibly find its way into the computers brain: the logic circuit.

We report the observation of a novel phenomenon, the self-retracting motion of graphite, in which tiny flakes of graphite, after being displaced to various suspended positions from islands of highly orientated pyrolytic graphite, retract back onto the islands under no external influences. Reports of this phenomenon have not been found in the literature for single crystals of any kind. Models that include the van der Waals force, electrostatic force, and shear strengths were considered to explain the observed phenomenon. These findings may conduce to create nanoelectromechanical systems with a wide range of mechanical frequency from megahertz to gigahertz.

Near ballistic n-type single-walled carbon nanotube field-effect transistors (SWCNT FETs) have been fabricated with a novel self-aligned gate structure and a channel length of about 120 nm on a SWCNT with a diameter of 1.5 nm. The device shows excellent on- and off-state performance, including high transconductance of up to 25 microS, small subthreshold swing of 100 mV/dec, and gate delay time of 0.86 ps, suggesting that the device can potentially work at THz regime. Quantitative analysis on the electrical characteristics of a long channel device fabricated on the same SWCNT reveals that the SWCNT has a mean-free-path of 191 nm, and the electron mobility of the device reaches 4650 cm(2)/Vs. When benchmarked by the metric CV/ I vs Ion/Ioff, the n-type SWCNT FETs show significantly better off-state leakage than that of the Si-based n-type FETs with similar channel length. An important advantage of this self-aligned gate structure is that any suitable gate materials can be used, and in particular it is shown that the threshold voltage of the self-aligned n-type FETs can be adjusted by selecting gate metals with different work functions.

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