Self-Aligned Ballistic n-Type Single-Walled Carbon Nanotube Field-Effect Transistors with Adjustable Threshold Voltage

Zhang, Zhiyong; Wang, Sheng; Ding, Li; Liang, Xuelei; Tian, Peng; Shen, Jun; Xu, Huilong; Chen, Qing; Cui, Rongli; Li, Yan; Peng, Lian‐Mao

doi:10.1021/nl8018802

Cited by 162 publications

(177 citation statements)

References 24 publications

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“…The performance of the FET is thus dominated by the source/drain contacts instead of junctions as present in the network-type CNT channels in network FETs 34,35 . After optimizing the material and device fabrication processes, the on-state current from each CNT in the FET reached a level similar to that of the best FETs based on individual CNTs 36 , yielding a mean G on , g m and I on per CNT of 26 μ S, 11.5 μ S and 14 μ A, respectively ( Supplementary Fig. 3).…”

Section: Nature Electronicsmentioning

confidence: 83%

Gigahertz integrated circuits based on carbon nanotube films

et al. 2017

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Carbon nanotube (CNT)-based electronics are a potential candidate to replace silicon complementary metal-oxide-semiconductor (CMOS) technology, which will soon meet its performance limit at the 7 or 5 nm technology node 1,2 . Prototype device studies using individual CNTs have shown that nanotube electronics have the potential to outperform Si CMOS technology in both performance and power consumption [3][4][5][6] , and are even close to the theoretical limits for all field-effect-transistor(FET)-based binary switches 7,8 . Recently, FETs were fabricated using aligned CNT arrays, and shown to have a higher channel conductance (at a lower bias) than that of Si CMOS FETs 9 . However, the key performance metrics reported for such CNT FETs, including on-state current density (I on ) and transconductance (g m ), are still substantially lower than those of conventional Si CMOS FETs at the same characteristic length [9][10][11][12][13] . The ideal material system for high-performance CNT electronics has been identified as a parallel array film of intrinsic pure semiconductor single-walled nanotubes of a single chirality with a diameter of approximately 1.3 nm and no defects, and a tube-tube spacing of 5-8 nm (ref. 14 ). Although such an ideal material system is yet to be realized, many breakthroughs in the purification and controlled synthesis of CNTs have been made in recent years [15][16][17][18][19] , suggesting the possibility of achieving the required nanotube purity and array density before 2020 14 . Using randomly oriented or aligned CNT array films, various types of CNT thin-film FETs have been fabricated [9][10][11][12][13] . However, hindered by the limited performance of nanotube FETs, the operation speed of CNT integrated circuits (ICs) 20-31 typically falls short of their expected terahertz potential, and that achieved by Si CMOS circuits (gigahertz), by several orders of magnitude. Notably, CNT-based ring oscillators (ROs) with an oscillation frequency (f o ) of 282 MHz have recently been reported 32 . However, CNT-thin-film-based ICs typically have a working frequency of less than 1 MHz, which might be useful for flexible electronics, but is not suitable for mainstream high-performance CMOS technology 33 . In this study, we used a randomly oriented CNT film to build CNT FETs and ICs, fabricating, in particular, five-stage ROs with f o of up to 5.54 GHz. The random CNT film is essentially the same as a network film, but here we used the term 'random film' to emphasize that our FETs are contact dominated and have a different transport mechanism to that of junction-dominated network-type FETs 34,35 . In principle, aligned CNT arrays would provide better device performance, but it remains a challenge to obtain wafer-scale aligned CNT arrays with high uniformity, high density and high semiconductor purity for constructing high-performance ICs. Although it is not the ideal scheme, the FET-and IC-based random CNT film can nevertheless provide a feasible demonstration to assess the floor-level performance (f...

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Section: Nature Electronicsmentioning

confidence: 83%

Gigahertz integrated circuits based on carbon nanotube films

et al. 2017

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“…Polymer or atomic layer deposition passivation can be used to reduce this effect 44,45 . Threshold voltage can also be controlled by dielectric surface modification with self-assembled monolayers with electrical dipoles 46 , polarization effects 47 , electrostatic doping by high dielectric constant dielectrics, or by using different metal contacts 48,49 .…”

Section: Dispersion With Various Polythiophene Derivativesmentioning

confidence: 99%

Selective dispersion of high purity semiconducting single-walled carbon nanotubes with regioregular poly(3-alkylthiophene)s

et al. 2011

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Conjugated polymers, such as polyfluorene and poly(phenylene vinylene), have been used to selectively disperse semiconducting single-walled carbon nanotubes (sc-sWnTs), but these polymers have limited applications in transistors and solar cells. Regioregular poly(3-alkylthiophene)s (rr-P3ATs) are the most widely used materials for organic electronics and have been observed to wrap around sWnTs. However, no sorting of sc-sWnTs has been achieved before. Here we report the application of rr-P3ATs to sort sc-sWnTs. Through rational selection of polymers, solvent and temperature, we achieved highly selective dispersion of sc-sWnTs. our approach enables direct film preparation after a simple centrifugation step. using the sorted sc-sWnTs, we fabricate high-performance sWnT network transistors with observed charge-carrier mobility as high as 12 cm 2 V − 1 s − 1 and on/off ratio of > 10 6 . our method offers a facile and a scalable route for separating sc-sWnTs and fabrication of electronic devices.

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“…5 for a typical top-gate n-type CNT FET. 9 Both the intrinsic gate-delay and energy-delay products are calculated for devices with channel length L=440 nm, 220 nm 10 and 120 nm 24 and compared directly with that of previous reported n-type CNT FETs and Si based n-MOSFETs 9 for gate-delay ( Fig. 6(a)) and energy-delay product (Fig.…”

Section: Doping-free Fabrication and Performance Of Cnt Fetsmentioning

confidence: 99%

A doping-free approach to carbon nanotube electronics and optoelectronics

Peng¹,

Zhang²,

Wang³

et al. 2012

AIP Advances

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A doping-free approach to carbon nanotube electronics and optoelectronics The electronic properties of conventional semiconductor are usually controlled by doping, which introduces carriers into the semiconductor but also distortion and scattering centers to the otherwise perfect lattice, leading to increased scattering and power consumption that becomes the limiting factors for the ultimate performance of the next generation electronic devices. Among new materials that have been considered as potential replacing channel materials for silicon, carbon nanotubes (CNTs) have been extensively studied and shown to have all the remarkable electronic properties that an ideal electronic material should have, but controlled doping in CNTs has been proved to be challenging. In this article we will review a doping-free approach for constructing nanoelectronic and optoelectronic devices and integrated circuits. This technique relies on a unique property of CNTs, i.e. high quality ohmic contacts can be made to both the conduction band and valence band of a semiconducting CNT. High performance nanoelectronic and optoelectronic devices have been fabricated using CNTs with this method and performance approach to that of quantum limit. In principle high performance electronic devices and optoelectronic devices can be integrated on the same carbon nanotube with the same footing, and this opens new possibilities for electronics beyond the Moore law in the future.

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Self-Aligned Ballistic n-Type Single-Walled Carbon Nanotube Field-Effect Transistors with Adjustable Threshold Voltage

Cited by 162 publications

References 24 publications

Gigahertz integrated circuits based on carbon nanotube films

Gigahertz integrated circuits based on carbon nanotube films

Selective dispersion of high purity semiconducting single-walled carbon nanotubes with regioregular poly(3-alkylthiophene)s

A doping-free approach to carbon nanotube electronics and optoelectronics

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