Carbon nanotube electronics: recent advances

Peng, Lian‐Mao; Zhang, Zhiyong; Wang, Sheng

doi:10.1016/j.mattod.2014.07.008

Cited by 293 publications

(181 citation statements)

References 65 publications

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“…In 2000, Zhou et al used K atom doping to fabricate REVIEW (3 of 16) 1600522 wileyonlinelibrary.com p-n diode as shown in the inset of Figure 2 a, which gave rise to a rectifi cation behavior as shown in Figure 2 a. [ 3,21,39 ] While charge transfer doping is possible, e.g., via introducing K atoms on the surface of the CNT, it is diffi cult to control the process and maintain the stability of the device. When dopants are inserted into the sp 2 lattice, the perfect intrinsic structure will be broke or distorted, leading to larger scattering, lower carrier mobility, lower operating speed and thus lower device performance.…”

Section: Cnt Photovoltaic Devicesmentioning

confidence: 99%

“…[ 18 ] Copyright 2009, American Chemical Society. [ 13,20,39 ] A unique advantage for CNT electronics is that perfect n-type (Sc and Y) and p-type (Pd) Ohmic contacts are available which provides effi cient means for injecting electrons and holes into the conduction and valance bands of a semiconducting CNT respectively. [ 37 ] Copyright 2008, John Wiley and Sons.…”

Section: Figurementioning

confidence: 99%

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Toward High‐Performance Carbon Nanotube Photovoltaic Devices

Wang

Peng

2016

Advanced Energy Materials

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PV) devices, direct-bandgap, broad spectral response, large absorption coeffi cient and fast response speed on the order of picosecond, etc. [ 4,6,12,13 ] Tremendous efforts have been made to convert the excellent intrinsic properties of CNTs into high-performance devices. Optoelectronic research has been focused mainly on nanoscale light-emitting diode (LED), photodetector, solar cell and novel physical discoveries such as two-photon absorption, multi-excitons generation, photovoltage multiplication and so on. [14][15][16][17][18][19][20] Here, the fundamental properties of CNT energy band structure and corresponding optical characteristics are reviewed. Then photovoltaic research developments of various kinds of CNT diodes, with particular emphasis on barrier-free-bipolar-diode (BFBD) devices fabricated via a dopingfree method are discussed. For pushing CNT PV devices toward applications, the status of CNT thin-fi lm-based PV devices, including recent breakthroughs made on solution-processed semiconducting CNT separation techniques, and the utilization of these materials for constructing high-performance PV diodes are discussed. The doping-free technique has been combined with virtual contacts to multiply photovoltage and thus to signifi cantly improve the performance and signal to noise ratio of PV devices. It is demonstrated that CNT PV device has a superior broadband response from visible to near infrared, high room temperature detectivity that can be compared with state-of-the-art InGaAs detectors, and extremely good temperature and temporal stability. This article will end with a discussion on the challenges that still lay ahead, and possible solutions. Basic Optical Properties of Carbon NanotubesAs shown in Figure 1 a, a CNT is composed of hexagonal honeycomb sp 2 lattice, and various chirality CNTs can be formed with different orientations relative to the tube axis, giving rise to distinct properties of either semiconducting or metallic. [ 21 ] Semiconducting CNTs have been recommended as the potential channel material for replacing silicon to extend Moore's law. [ 5 ] However, beyond Moore, it is also of great signifi cance to build high-performance optoelectronic devices and circuits. [ 12,22 ] The excellent properties of CNT stem from its basic band structure, which is signifi cant to discuss its unique physical Photovoltaic (PV) infrared (IR)-based devices are important for a variety of industrial and scientifi c applications, such as IR imaging, biological sensing, day-night surveillance and in solar cells. However, most high-end IR PV devices made of conventional semiconductors need to be cooled to achieve high performance, while these materials usually are also not stable under strong illumination. Carbon nanotubes (CNTs) are direct-bandgap materials with a broad spectral response and a large absorption coeffi cient, which is most desired for building high-performance PV devices. Main progresses on CNT PVs in the past 15 years is reviewed, emphasizing recent breakthrough of CNT IR photodetectors b...

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Section: Cnt Photovoltaic Devicesmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Toward High‐Performance Carbon Nanotube Photovoltaic Devices

Wang

Peng

2016

Advanced Energy Materials

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“…Figure 1 shows the 3-D structure of the CNFET. 10,17 As graphene tubes have very high electron mobility and conductivity, therefore drain current remains approximately constant throughout the channel. Figure 2 shows the cross-sectional view of CNFET.…”

Section: Introductionmentioning

confidence: 99%

“…Figure 2 shows the cross-sectional view of CNFET. 11,16,17 In this paper, a dual chirality based domino technique is used to implement low noise high-speed domino logic circuit. Pitch is the spacing between two CNTs.…”

Section: Introductionmentioning

confidence: 99%

A 1‐bit full adder using CNFET based dual chirality high speed domino logic

Garg

Gupta

Pandey³

2019

Circuit Theory & Apps

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CNFET devices are preferred over CMOS devices for designing high-speed digital circuits. This paper introduces a new technique Dual Chirality High-speed Domino Logic (DCHSDL) for implementing low power and high-speed domino circuits in CNFET technology. Simulations are carried out for 32 nm Stanford CNFET model in HSPICE for 2, 4, 8 and 16 input domino OR gates at a clock frequency of 200 MHz on a DC supply voltage of 0.9 V. The proposed domino technique shows maximum power reduction of 82.55% and maximum delay reduction of 57.97% compared to CPVT technique in CNFET technology at a frequency of 200 MHz. The proposed circuit shows maximum power reduction of 97.90% compared to its analogous circuit in CMOS technology for a 2-input domino OR gate. The proposed technique shows maximum improvement of 1.05× to 1.63× in unity noise gain (UNG) compared to various existing techniques in CNFET technology at a frequency of 200 MHz. The 1-bit Full Adderdesigned using the proposed technique shows a power reduction of 16.91% and a delay reduction of 23.64% compared to standard FDL 1-bit Full Adder. K E Y W O R D SCNFET, Domino, Dynamic, FOM, VLSI

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“…In this scenario, extensive research has been performed on using carbon-based materials because of their low cost, good electrical conductivity and interesting electrocatalytic properties, which could be further improved through their appropriate decoration with different metal nanoparticles [7][8][9][10][11]. In particular, Nam et al [12] have shown that by replacing Pt with well-aligned carbon nanotubes (CNTs) as CEs, the conversion efficiency of their DSSCs was 10% higher than that of standard Pt-based DSSCs.…”

Section: Introductionmentioning

confidence: 99%

Pulsed-laser-ablation based nanodecoration of multi-wall-carbon nanotubes by Co–Ni nanoparticles for dye-sensitized solar cell counter electrode applications

Imbrogno

Pandiyan

Barberio

et al. 2017

Mater Renew Sustain Energy

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We report here on the use of pulsed KrF-laser deposition technique (PLD) for the decoration of Multiwall carbon nanotubes (MWCNTs) by Co-Ni nanoparticles (NPs) to form highly efficient counter electrodes (CEs) for use in Dye-sensitized solar cells (DSSC). By varying the number of laser ablation pulses (N LP = 500-60,000) of the KrF laser, we were able to control the average size of the Co-Ni NPs and the surface coverage of the MWCNTs by the nanoparticles. The PLD-based decoration of MWCNTs by Co-Ni NPs is shown to form novel counter electrodes, which significantly enhance the power conversion efficiency (PCE) of the DSSCs. Indeed, the DSSCs based on the PLD-decorated Co-Ni counter electrodes (obtained at the optimal N LP = 40,000) are shown to exhibit a PCE value as high as 6.68%, with high short circuit current (J sc = 14.68 mA/cm2 ) and open circuit voltage (V oc = 0.63 V). This represents a PCE improvement of *190% in comparison to the DSSCs with pristine MWCNTs (PCE = 2.3%) and *7.4% PCE increase than that of the conventional DSSC made with a sputtered Platinum-based counter electrode. By systematically investigating the local nanostructure of the Co-Ni decorated CEs, we found that the Co-Ni NPs layer exhibits a porous cauliflower-like morphology, of which surface roughness (RMS) is N LP dependent. Interestingly, both PCE and roughness of the Co-Ni NPs layer are found to exhibit the same N LP dependence, with a maximum located around the optimal N LP value of 40,000. This enabled us to establish, for the first time, a linear correlation between the achieved PCE of DSSCs and the local roughness of their CEs decorated by Co-Ni NPs. Such a correlation highlights the importance of maximizing the surface area of the CoNi coated MWCNTs on the CEs to enhance the PCE of the DSSCs. Finally, Ultra-violet Photoelectron Spectroscopy (UPS) measurements revealed a significant decrease in the local work function (U) of Co-Ni NPs decorated MWCNTs based CEs (at N LP = 40,000, U = 3.9 eV) with respect to that of either pristine MWCNTs (U = 4.8 eV) or sputtered-Pt (U = 4.3 eV) counter-electrodes. This U lowering of the Co-Ni/MWCNTs based CEs is an additional advantage to enhance the catalytic reaction of the redox couple of the electrolyte solution, and improve thereby the PCE of the DSSCs.

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Carbon nanotube electronics: recent advances

Cited by 293 publications

References 65 publications

Toward High‐Performance Carbon Nanotube Photovoltaic Devices

Toward High‐Performance Carbon Nanotube Photovoltaic Devices

A 1‐bit full adder using CNFET based dual chirality high speed domino logic

Pulsed-laser-ablation based nanodecoration of multi-wall-carbon nanotubes by Co–Ni nanoparticles for dye-sensitized solar cell counter electrode applications

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