Room-Temperature Charge Stability Modulated by Quantum Effects in a Nanoscale Silicon Island

Abstract

We report on transport measurement performed on a room-temperature-operating ultra-small Coulomb blockade devices with a silicon island of sub-5nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub-5nm ultra-small scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.

Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime

“…16,17 Many attempts have been made for the realization of high-performance QD-SETs. [18][19][20][21] Among the possible material choices for QD-SETs, Ge is particularly attractive because of its Bohr radius (24.9 nm) larger than their counterparts of Si (5 nm) and metals (<1 nm), suggesting a relative ease of sustaining stable CB operation at given QD size and temperature. The authors have demonstrated a promising complementary metal-oxide-semiconductor (CMOS)-compatible nanofabrication approach for the realization of Ge-QD SHTs with self-aligned electrodes over the conventional lithographic patterning and epitaxial growth techniques.…”

A Novel Design of SET-CMOS Half Subtractor and Full Subtractor

“…The proposed circuits are simulated using the MIB compact model. The island, gate and tunnel capacitors of SET designed for room temperature operation and the supply voltage Vdd is taken to 08V [10,11].…”

Universality and quantization of the power-to-heat ratio in nanogranular systems

“…The single-charge transistor tunneling in a granular device in the quantum case is realized only for rare combinations of parameters and needs in addition well controlled gate voltages applied to each grain. In this case the excess charge carriers can classically stay in the grains for a sufficiently long time [2,[19][20][21][22][23][24][25][26]. Even then it is difficult to maintain this regime due to charge migration into the nearby gates and insulating areas.…”