Room-Temperature Current Oscillation Based on Negative Differential Resistance in a One-Dimensional Organic Charge-Transfer Complex

Kishida, Hideo; Ito, T.; Ito, Atsuya; Nakamura, Arao

doi:10.1143/apex.4.031601

Cited by 12 publications

(12 citation statements)

References 21 publications

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“…4. Current oscillations occur frequently in nonlinear transport studies in various organic conductors [37,[65][66][67][68][69][70]. There, they are often related to sliding charge-density waves (CDW) or electrically induced insulator-metal transitions accompanied by a bistability [46,65].…”

Section: Discussionmentioning

confidence: 99%

Light-Induced Current Oscillations in the Charge-Ordered State of (TMTTF)2SbF6

Peterseim¹,

Dressel²

2017

Preprint

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Below T CO = 157 K the quasi-one-dimensional charge-transfer salt (TMTTF) 2 SbF 6 undergoes a pronounced phase transition to a charge-ordered ground state. We have explored the non-linear and photoconductive behavior as a function of applied voltage, laser pulse energy and temperature. Besides a decay of the photoconductive signal in a double exponential fashion in the millisecond range, we discover current oscillations in the kHz range induced by the application of short laser pulses. While the resonance frequencies do not depend on voltage or laser intensity and vary only slightly with temperature, the amplitude changes linearly with the laser intensity and voltage. The findings are discussed and compared to comparable phenomena in other low-dimensional electron systems.

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Section: Discussionmentioning

confidence: 99%

Light-Induced Current Oscillations in the Charge-Ordered State of (TMTTF)2SbF6

Peterseim¹,

Dressel²

2017

Preprint

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“…The elucidation of these electronic states and the formation mechanism for these external-field-induced phases is a first step toward field-induced phase control. Nonlinear conducting behaviors, defined as field-induced changes of resistivity, are intriguing phenomena, which are often observed in strongly correlated inorganic and organic electron systems such as Sr 2 CuO 3 [4], -type bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) salts [5,6], potassium-tetracyanoquinodimethane [7,8], and one-dimensional halogen-bridged nickel compounds [9]. However, the electronic state and the mechanisms of domain formation in nonlinear conducting states are controversial.…”

mentioning

confidence: 99%

Measurement of the Nonlinear Conducting States ofα−(BEDT−TTF)2I3Using Ele

Ito

Nakamura

et al. 2013

Phys. Rev. Lett.

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Nonlinear conducting states in a strongly correlated organic electronic system α-(BEDT-TTF)2I3 [BEDT-TTF=bis(ethylenedithio)-tetrathiafulvalene] are studied by Raman spectroscopy. Wide-range Raman spectra of nonlinear conducing states provide direct information about conducting properties through the electronic Raman process. A comparison between the behaviors of the electronic modes of BEDT-TTF layers and the vibrational mode of I3 molecules reveals the formation of nonequilibrium states in which only the electronic parts show the change of states. We obtained a spatial map of the conducting regions of the nonlinear conducting states by utilizing the electronic Raman intensity as a measure of the highly conducting states. A spatially inhomogeneous formation of nonlinear conducting states was observed.

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“…2 are in qualitative agreement with experiments in which a current is passed through a Mott insulator and the electric field (thus the conductivity) is measured, see e. g. Refs. [34,35]. Indeed, up to this point the treatment is suitable to describe situations in which the current, and not the electric field, is the external parameter.…”

Section: Phenomenological Model Of Field-induced Carrier Avalanche Mu...mentioning

confidence: 99%

“…While a similar mechanism occurs also in semiconductors [31], a distinctive feature of Mott materials is the non-linearity of the process. Indeed, non-linear response to applied fields is a fingerprint of strongly correlated insulators, which often display multivalued I-V characteristic with regions of negative differential resistance R ≡ dV /dI (V, I: voltage and current across a two-terminal device) [7,8,[32][33][34][35].…”

Section: Introductionmentioning

confidence: 99%

Mott Memristors based on Field-Induced Carrier Avalanche Multiplication

Peronaci¹,

Ameli²,

Takayoshi³

et al. 2021

Preprint

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We present a theory of Mott memristors whose working principle is the non-linear carrier avalanche multiplication in Mott insulators subject to strong electric fields. The internal state of the memristor, which determines its resistance, is encoded in the density of doublon and hole excitations in the Mott insulator. In the current-voltage characteristic, insulating and conducting states are separated by a negative-differential-resistance region, leading to hysteretic behavior. Under oscillating voltage, the response of a voltage-controlled, non-polar memristive system is obtained, with retarded current and pinched hysteresis loop. As a first step towards neuromorphic applications, we demonstrate self-sustained spiking oscillations in a circuit with a parallel capacitor. Being based on electronic excitations only, this memristor is up to several orders of magnitude faster than previous proposals relying on Joule heating or ionic drift.

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Room-Temperature Current Oscillation Based on Negative Differential Resistance in a One-Dimensional Organic Charge-Transfer Complex

Cited by 12 publications

References 21 publications

Light-Induced Current Oscillations in the Charge-Ordered State of (TMTTF)2SbF6

Light-Induced Current Oscillations in the Charge-Ordered State of (TMTTF)2SbF6

Measurement of the Nonlinear Conducting States ofα−(BEDT−TTF)2I3Using Ele

Mott Memristors based on Field-Induced Carrier Avalanche Multiplication

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