Room temperature deposition of highly sensitive vanadium oxide films for infrared light sensing applications

Grayli, Siamack V.; El-chami, Ibrahim; Bahreyni, Behraad; Leach, Gary W.

doi:10.1109/icsens.2015.7370601

Cited by 3 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Table 1 offers a comparison between what presented here and the previous work in the field. We previously reported typical TCR values of -2.0%°C -1 for thin samples of less than 200nm in thickness [37]. We also observed a thickness dependence of the TCR response as well as the resistivity of annealed samples to be generally larger than those not subject to annealing.…”

Section: Introductionsupporting

confidence: 62%

Sol-gel deposition and characterization of vanadium pentoxide thin films with high TCR

Grayli

Leach

Bahreyni

2018

Sensors and Actuators A: Physical

Self Cite

View full text Add to dashboard Cite

Vanadium pentoxide thin films have been deposited on quartz substrates via sol-gel synthesis and dip coating. The process was developed to establish a reliable and inexpensive method to produce thin films with a high temperature coefficient of resistance (TCR) for sensing applications. Sol-gel precursor concentration and post-deposition annealing conditions were varied to address their effects on film composition, morphology, structure, resistivity, and TCR response. The resulting thin films were structurally characterized by thin film profilometry, x-ray diffraction, scanning electron microscopy, and Raman spectroscopy. Resistivity and TCR measurements were carried out to determine their efficacy as sensor materials. Both low and high concentration alkoxide sol-gel precursors led to films of pure α-V2O5 composition but with characteristically different structural and electrical properties. Low concentration films showed a modest decrease in resistivity and TCR with increasing annealing temperature, consistent with the formation of increasing grain size and the coalescence of largely planar grains with common crystalline orientation. In contrast, films fabricated from higher alkoxide precursor

show abstract

Section: Introductionsupporting

confidence: 62%

Sol-gel deposition and characterization of vanadium pentoxide thin films with high TCR

Grayli

Leach

Bahreyni

2018

Sensors and Actuators A: Physical

Self Cite

View full text Add to dashboard Cite

show abstract

“…At the present time, vanadium oxide (VO x ) (~2%/K) [10][11][12][13][14][15][16] and doped amorphous silicon (a-Si) with TCR values of 2%-5%/K [17][18][19][20][21][22] are the two main materials used as thermosensing films in commercial microbolometers. However, amorphous silicon, usually doped with boron, is replacing vanadium oxide in large commercial arrays.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Microbolometer Arrays Based on Polymorphous Silicon–Germanium

Jiménez

Moreno

Torres

et al. 2020

Sensors

View full text Add to dashboard Cite

This work reports the development of arrays of infrared sensors (microbolometers) using a hydrogenated polymorphous silicon–germanium alloy (pm-SixGe1-x:H). Basically, polymorphous semiconductors consist of an amorphous semiconductor matrix with embedded nanocrystals of about 2–3 nm. The pm-SixGe1-x:H alloy studied has a high temperature coefficient of resistance (TCR) of 4.08%/K and conductivity of 1.5 × 10−5 S∙cm−1. Deposition of thermosensing film was made by plasma-enhanced chemical vapor deposition (PECVD) at 200 °C, while the area of the devices is 50 × 50 μm2 with a fill factor of 81%. Finally, an array of 19 × 20 microbolometers was packaged for electrical characterization. Voltage responsivity values were obtained in the range of 4 × 104 V/W and detectivity around 2 × 107 cm∙Hz1/2/W with a polarization current of 70 μA at a chopper frequency of 30 Hz. A minimum value of 2 × 10−10 W/Hz1/2 noise equivalent power was obtained at room temperature. In addition, it was found that all the tested devices responded to incident infrared radiation, proving that the structure and mechanical stability are excellent.

show abstract

Reduction of fixed pattern noise in bolometer-type uncooled infrared image sensors using pixel current calibration technique

Kim¹,

Choi²,

Lee³

et al. 2017

2017 Ieee Sensors

View full text Add to dashboard Cite

Room temperature deposition of highly sensitive vanadium oxide films for infrared light sensing applications

Cited by 3 publications

References 9 publications

Sol-gel deposition and characterization of vanadium pentoxide thin films with high TCR

Sol-gel deposition and characterization of vanadium pentoxide thin films with high TCR

Fabrication of Microbolometer Arrays Based on Polymorphous Silicon–Germanium

Reduction of fixed pattern noise in bolometer-type uncooled infrared image sensors using pixel current calibration technique

Contact Info

Product

Resources

About