Room temperature deposition of ITO using r.f. magnetron sputtering

Gorjanc, Timothy C.; Leong, Dennis; Py, Christophe; Roth, D

doi:10.1016/s0040-6090(02)00425-x

Cited by 76 publications

(36 citation statements)

References 15 publications

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“…As pointed out above, the charge carriers of the ITO thin films are either contributed by Sn +4 ion or oxygen vacancies. The incorporation of oxygen atoms into the ITO films causes the decrease of oxygen vacancies and then gives rise to higher resistivity of ITO films [26]. When the oxygen vacancies in ITO thin films are fully filled, it leads to thin films growing more dense.…”

Section: Resultsmentioning

confidence: 99%

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

Tien

Lin

Chang

et al. 2018

Advances in Condensed Matter Physics

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This study presents the effect of oxygen flow rate on the optical, electrical, and mechanical properties of indium tin oxide (ITO) thin films prepared by the DC magnetron sputtering technique. The oxygen flow rate was varied from 10 to 50 sccm. The ITO thin films deposition under different oxygen flow rates exhibits different properties. We used an optical spectrometer to measure the optical transmittance and a four-point probe instrument to determine the resistivity. A home-made Twyman-Green interferometer was used to evaluate residual stress and a microscopic interferometer was used to measure the surface roughness of ITO thin films. The experimental results show that the average optical transmittance is larger than 85% in visible range; the electrical resistivity has a minimum 6.85 × 10 −4 ohm-cm for the oxygen flow of 10 sccm. The residual stress is varied from −0.15 GPa to −0.34 GPa in the range of 10-50 sccm. The root-mean-square (rms) surface roughness is changed from 2.64 nm to 2.74 nm as the oxygen flow rate increases. The results show that the oxygen flow rate has significant influence on the electrical resistivity, residual stress, and surface roughness of the ITO thin film.

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Section: Resultsmentioning

confidence: 99%

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

Tien

Lin

Chang

et al. 2018

Advances in Condensed Matter Physics

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“…Established room-temperature ITO sputtering technology can be utilized. 24 Figure 2(b) shows one of the samples tested. There are four separate HV electrodes (sensors) to test gain uniformity across each sample.…”

Section: A Sample Structurementioning

confidence: 99%

Development of solid‐state avalanche amorphous selenium for medical imaging

et al. 2015

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Purpose: Active matrix flat panel imagers (AMFPI) have limited performance in low dose applications due to the electronic noise of the thin film transistor (TFT) array. A uniform layer of avalanche amorphous selenium (a-Se) called high gain avalanche rushing photoconductor (HARP) allows for signal amplification prior to readout from the TFT array, largely eliminating the effects of the electronic noise. The authors report preliminary avalanche gain measurements from the first HARP structure developed for direct deposition onto a TFT array. Methods: The HARP structure is fabricated on a glass substrate in the form of p-i-n, i.e., the electron blocking layer (p) followed by an intrinsic (i) a-Se layer and finally the hole blocking layer (n). All deposition procedures are scalable to large area detectors. Integrated charge is measured from pulsed optical excitation incident on the top electrode (as would in an indirect AMFPI) under continuous high voltage bias. Avalanche gain measurements were obtained from samples fabricated simultaneously at different locations in the evaporator to evaluate performance uniformity across large area. Results: An avalanche gain of up to 80 was obtained, which showed field dependence consistent with previous measurements from n-i-p HARP structures established for vacuum tubes. Measurements from multiple samples demonstrate the spatial uniformity of performance using large area deposition methods. Finally, the results were highly reproducible during the time course of the entire study. Conclusions: We present promising avalanche gain measurement results from a novel HARP structure that can be deposited onto a TFT array. This is a crucial step toward the practical feasibility of AMFPI with avalanche gain, enabling quantum noise limited performance down to a single x-ray photon per pixel. C 2015 American Association of Physicists in Medicine.

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“…This means an average visible light (400 -800 nm) transmission of around 80 %, and sheet resistances of 20 Ω/sq or less [9]. The best quality ITO films are usually deposited at elevated temperatures, which can cause serious problems for any temperature-sensitive technology such as organic solar cells and LEDs [9].…”

Section: Introductionmentioning

confidence: 99%