Room-Temperature Deposition of Silicon Thin Films by RF Magnetron Sputtering

Hashim, Shaiful Bakhtiar; Mahzan, Norhidayatul Hikmee; Herman, Sukreen Hana; Mahmood, Mohamad Rusop

doi:10.4028/www.scientific.net/amr.576.543

Cited by 6 publications

(4 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…More than 30% of N 2 gas ratio, the decrease of thickness can be well explained by the ratio of sputter gases employed during the deposition. As the N 2 gas ratio increased, the sputter yield of Sn decreased [19]. There was no phase mixing like SnN-10 and SnN-20 in region 2.…”

Section: Resultsmentioning

confidence: 88%

Tin nitride thin films fabricated by reactive radio frequency magnetron sputtering at various nitrogen gas ratios

Choi¹,

Kang²,

Park³

et al. 2014

Thin Solid Films

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 88%

Tin nitride thin films fabricated by reactive radio frequency magnetron sputtering at various nitrogen gas ratios

Choi¹,

Kang²,

Park³

et al. 2014

Thin Solid Films

View full text Add to dashboard Cite

“…Therefore, the film was heterogeneously packed with metallic Ru and amorphous RuN phases, according to the large broadening of the diffraction peaks shown in Figure . Then, the film growth at 15% can be considered a loosely packed structure compared with pure Ruthenium; the decrease in thickness in samples grown greater than 15% can be well explained by the ratio of sputter gases employed during the deposition …”

Section: Resultsmentioning

confidence: 99%

Influence of nitrogen partial pressure on the microstructure and morphological properties of sputtered RuN coatings

Quintero

Ospina

Mello

et al. 2017

Surf Interface Anal

View full text Add to dashboard Cite

In this work, the production of RuN thin films using the reactive direct current magnetron sputtering technique is presented. Samples were grown with varying Ar/N2 ratio with values of 60/40, 80/20, 85/15, 90/10, 95/5, and 100/0. X‐ray photoelectron spectroscopy was employed to determine the presence of RuN before and after a sputtering etching process. According to the high‐resolution of N1s spectra, 3 peaks were identified at 397.4 ± 0.3 eV, 398.3 ± 0.3 eV, and 398.8 ± 0.3 eV binding energies, corresponding to hybridizations of nitrogen with transition metals, oxynitrides, and oxycarbides. X‐ray diffraction analyses were performed, showing the coexistence of the RuN face‐centered cubic and Ru hexagonal compact packed phases. After the etching process, the samples grown at nitrogen flow rates greater than 15% continued to show the RuN face‐centered cubic phase. Atomic force microscope analyses showed that as the nitrogen concentration increased, the grain size and roughness also tended to increase.

show abstract

“…The decreasing behavior of that parameter was expected due to the reduction in the mean free path of the species in the plasma when the gas pressure raised. The main mechanism responsible of that behavior was the increase in the collisions between the sputtered particles and the charged Ar ions [ 19 ].…”

Section: Resultsmentioning

confidence: 99%

“…At the low Ar pressure regimen used, the Si–Si transverse optical mode (TO) was located at 500 cm −1 , corresponded to nc-Si. This nc nature could be attributed to the higher impact of the sputtered ions on the substrate surface yielded at low Ar pressures [ 19 ]. In addition, the films deposited at these conditions of RT and low pressures would show a compact structure die to the high deposition rate, favoring to a better structural quality and to the presence of such nc structures.…”

Section: Resultsmentioning

confidence: 99%

Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology

et al. 2021

View full text Add to dashboard Cite

Non-hydrogenated amorphous-silicon films were deposited on glass substrates by Radio Frequency magnetron sputtering with the aim of being used as precursor of a low-cost absorber to replace the conventional silicon absorber in solar cells. Two Serie of samples were deposited varying the substrate temperature and the working gas pressure, ranged from 0.7 to 4.5 Pa. The first Serie was deposited at room temperature, and the second one, at 325 °C. Relatively high deposition rates above 10 Å/s were reached by varying both deposition temperature and working Argon gas pressure to ensure high manufacturing rates. After deposition, the precursor films were treated with a continuous-wave diode laser to achieve a crystallized material considered as the alternative light absorber. Firstly, the structural and optical properties of non-hydrogenated amorphous silicon precursor films were investigated by Raman spectroscopy, atomic force microscopy, X-ray diffraction, reflectance, and transmittance, respectively. Structural changes were observed in the as-deposited films at room temperature, suggesting an orderly structure within an amorphous silicon matrix; meanwhile, the films deposited at higher temperature pointed out an amorphous structure. Lastly, the effect of the precursor material’s deposition conditions, and the laser parameters used in the crystallization process on the quality and properties of the subsequent crystallized material was evaluated. The results showed a strong influence of deposition conditions used in the amorphous silicon precursor.

show abstract

Room-Temperature Deposition of Silicon Thin Films by RF Magnetron Sputtering

Cited by 6 publications

References 19 publications

Tin nitride thin films fabricated by reactive radio frequency magnetron sputtering at various nitrogen gas ratios

Tin nitride thin films fabricated by reactive radio frequency magnetron sputtering at various nitrogen gas ratios

Influence of nitrogen partial pressure on the microstructure and morphological properties of sputtered RuN coatings

Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology

Contact Info

Product

Resources

About