Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide

Chaisakul, Papichaya; Marris‐Morini, Delphine; Isella, Giovanni; Chrastina, D.; Izard, Nicolas; Roux, Xavier Le; Edmond, Samson; Coudevylle, Jean-René; Vivien, Laurent

doi:10.1063/1.3647572

Cited by 40 publications

(27 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results are confirmed by room temperature electroluminescence (EL) measurements from a Ge/Si 0.15 Ge 0.85 QW waveguide [49]. Figure 6A shows the measured spectra without any temperature stabilization.…”

Section: Recombination Processes In Ge-rich Ge/sige Qw: Competition Bsupporting

confidence: 72%

“…When radiative carrier recombinations are considered, a competition occurs between direct and indirect recombinations. Different experimental works have been performed to compare these recombinations and to evaluate their dynamics, mainly using Ge/Si 0.15 Ge 0.85 MQW on Si 0.1 Ge 0.9 virtual substrates [47][48][49][50][51][52][53]. Photoluminescence (PL) has been investigated over a wide spectral range, and for different temperatures: from 5K to room temperature [47] and in the above room temperature range between 300-440K [48].…”

Section: Recombination Processes In Ge-rich Ge/sige Qw: Competition Bmentioning

confidence: 99%

See 1 more Smart Citation

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Marris‐Morini¹,

Chaisakul²,

Rouifed³

et al. 2013

Nanophotonics

Self Cite

View full text Add to dashboard Cite

Despite being an indirect bandgap material, germanium (Ge) recently appeared as a material of choice for low power consumption optical link on silicon. Thanks to a low energy difference between direct and indirect energy bandgap, optical transitions around the direct gap can be used to achieve strong electroabsorption or photodetection in a material already used in microelectronics circuits. However, many challenges have to be addressed such as the growth of germanium-rich structures on silicon or the modeling of these structures around both direct and indirect bandgaps. This paper will explore recent achievements in Ge/SiGe quantum wells structures. Quantum confined Stark effect has been studied for different quantum well designs and light polarization. Both absorption and phase variations have been characterized and will be reported. Carrier recombination processes is also an intense research topic, in order to evaluate the competition between direct and indirect band gap emission as a function of temperature. Main results and conclusion will be introduced. Finally, high performance photonic devices (modulator and photodetector) that have already been demonstrated will be presented. At the end the challenges faced by Ge/SiGe QW as a new photonic platform will be presented.

show abstract

Section: Recombination Processes In Ge-rich Ge/sige Qw: Competition Bsupporting

confidence: 72%

Section: Recombination Processes In Ge-rich Ge/sige Qw: Competition Bmentioning

confidence: 99%

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Marris‐Morini¹,

Chaisakul²,

Rouifed³

et al. 2013

Nanophotonics

Self Cite

View full text Add to dashboard Cite

show abstract

“…At present, however, direct-gap electroluminescence [72][73][74][75] and lasing 67 in Ge-based heterostructures have been achieved only under high current densities and shown to be not efficient yet. 70,75 Such drawbacks strongly hamper the widespread application of Ge-based light sources.…”

Section: Discussionmentioning

confidence: 99%

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

et al. 2013

Self Cite

View full text Add to dashboard Cite

Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is shown to yield high polarization degree, namely larger than 40%, as well as a fine-tuning of the angular momentum of the emitted light with a complete reversal between right-and left-handed circular polarization. By combining the measurement of the optical polarization state of band-edge luminescence and Monte Carlo simulations of carrier dynamics, we show that these very rich and complex phenomena are the result of the electron thermalization and cooling in the multi-valley conduction band of Ge. The circular polarization of the direct-gap radiative recombination is indeed affected by energy relaxation of hot electrons via the X valleys and the Coulomb interaction with extrinsic carriers. Finally, thermal activation of unpolarized L valley electrons accounts for the luminescence depolarization in the high temperature regime.

show abstract

“…2 Previous works have demonstrated electroluminescence from Ge p-i-n structures or other configurations grown on top of standard Si wafers. [3][4][5][6][7] Electroluminescence has also been demonstrated from Ge quantum well devices but so far the emission has been at wavelengths below 1.45 lm (Ref. 7) which is too low for the important 1.55 lm for telecoms.…”

mentioning

confidence: 99%

“…The substrate was degassed at 316 C for 10 min before loading into a low-energy plasma-enhanced chemical vapour deposition (LEPECVD) chamber. 7,10 The heterolayer design is shown in Fig. 1 followed by 3 nm of Si was grown to produce a Schottky top contact that would allow hot electron injection into the C-valley with the aim of producing more efficient direct recombination.…”

mentioning

confidence: 99%

1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates

Gallacher

Velha

Paul

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

Design and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturing system Rev. Sci. Instrum. 83, 125001 (2012) Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic/quantum dot white light-emitting diode Appl. Phys. Lett. 101, 233110 (2012) Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes Appl. Phys. Lett. 101, 231107 (2012) Precise relationship between voltage and frequency at the appearance of negative capacitance in InGaN diodes

show abstract

Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide

Cited by 40 publications

References 21 publications

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates

Contact Info

Product

Resources

About