Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si

Abstract

We report the electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si. Metal-insulator-semiconductor structures in a form of Au/SiO(2)/ZnO-nanorod-array were fabricated on Si. Such devices exhibit random lasing when the Au electrode is applied with a sufficiently high positive voltage. In this context, in the region adjacent to SiO(2)/ZnO-nanorod-array interface, stimulated emission from ZnO occurs due to population inversion and, moreover, light is scattered by the nanorods and SiO(2) films. Therefore, random lasing proceeds due to optical gain achieved by the stimulated emission and multiple scattering.

Electrically pumped random lasing based on an Au–ZnO nanowire Schottky junction

“…The output power is about 67 nW at a drive current of 100 mA, which is about two orders of magnitude higher than that of the MIS structure random laser device. 18 Finally, we discuss the mechanism of the lasing behavior from the Au-ZnO nanowire Schottky diode. Fig.…”

“…Electrically pumped random lasing behavior has been realized in ZnO p-n junction structures. 1,14,15 Nevertheless, due to the difficulty and unreliability of ZnO p-type doping, other structures such as the heterojunction 16,17 and metal-insulator-semiconductor (MIS) structures 18,19 have been developed. These device structures have shown promising lasing spectral characteristics.…”

Electrically pumped ultraviolet random lasing action from p-NiO/n-GaN heterojunction

“…[1][2][3]. For the past few years, the electrically pumped ultraviolet random laser actions have been realized by using highly disordered ZnO film and various ZnO micro-and nanostructures [4][5][6][7][8]. But it is not propitious to obtain high ultraviolet random laser performance based on ZnO random cavities due to the difficulties in producing highly conductive and stable p-type ZnO material [9][10][11][12].…”

Ultraviolet random lasing from Mg0.12Zn0.88O:N/ZnO:Ga single-heterostructure diode

“…Recently, much effort has been invested in ZnO-based random laser research for various potential applications such as bio-sensing, speckle-free imaging, medical diagnostics, and information storage and defense [6][7][8]. There have been many reports of ZnO-based homojunction LED devices [9][10][11][12], and also, several ZnO-based random lasing device structures have already been demonstrated, including homojunctions, metal-insulator-semiconductor (MIS) structures, and heterostructured devices with the combination of n-ZnO and other p-type materials [13][14][15][16][17][18][19][20]. For practical applications, it is essential to significantly enhance the output power of the device and also have controllability on the wavelength of the random lasing modes [19,21].…”