Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes

Liu, C. W.; Lee, Ming-Hsueh; Chen, Miin Jang; Lin, Ivan J. B.; Lin, Ching−Fuh

doi:10.1063/1.126081

Cited by 84 publications

(26 citation statements)

References 7 publications

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“…This is very similar to the line shape of electron-hole-plasma (EHP) recombination. To confirm this observation, we fit the EL spectra by the line shape of EHP recombination [3]. Fig.7 also shows the theoretical EHP spectra, indicating an excellent fit to the experimental data.…”

Section: Light Emitting Diodesupporting

confidence: 69%

Light emission and detection by metal oxide silicon tunneling diodes

Liu

Lee

Lin

et al.

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)

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Both NMOS and PMOS light-emitting diodes and photodetectors are demonstrated. For the ultrathin gate oxide, the tunneling gate of metal oxide silicon (MOS) diodes can be utilized as both emitters for light emitting devices and collectors for light detectors. An electron-hole plasma model is used to fit the emission spectra. A surface band bending is responsible for the bandgap reduction in electroluminescence (EL) from the MOS tunneling diode. The dark current of the photodetectors is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature(l000"C) of the oxide can reduce the dark current to a level as low as 3nAlcm2.

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Section: Light Emitting Diodesupporting

confidence: 69%

Light emission and detection by metal oxide silicon tunneling diodes

Liu

Lee

Lin

et al.

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)

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“…Bulk Si is an indirect band gap material and it is hard to generate radiative recombination unless the momentum conservation is satisfied. The band edge emission of Si electroluminescence (EL) from the metal-insulator-semiconductor (MIS) tunneling structures 8,9 and solar cell p-n junctions 10 have been reported. Phonon-replica infrared emission from Si is a multi-particle interaction, and the coupling among electron, hole, and phonon leads to radiative recombination.…”

mentioning

confidence: 99%

“…8 The direct current (DC) mode EL measurement uses the lock-in technology to improve the signal-to-noise ratio for low injection current (luminescence) measurement. The EL spectra at room temperature with injected current from 100 to 1000 mA are shown in Fig.…”

mentioning

confidence: 99%

Phonon-assisted transient electroluminescence in Si

Cheng

Chu-Su

Liu

et al. 2014

Applied Physics Letters

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The phonon-replica infrared emission is observed at room temperature from indirect band gap Si light-emitting diode under forward bias. With increasing injection current density, the broadened electroluminescence spectrum and band gap reduction are observed due to joule heating. The spectral-resolved temporal response of electroluminescence reveals the competitiveness between single (TO) and dual (TO + TA) phonon-assisted indirect band gap transitions. As compared to infrared emission with TO phonon-replica, the retarder of radiative recombination at long wavelength region (∼1.2 μm) indicates lower transition probability of dual phonon-replica before thermal equivalent.

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“…7b). 3.3 Dislocation-based MOS-LED EL with BB emission at about 1.1 µm was reported from a MOS tunnel diode prepared on n-type Si [24]. Under positive gate bias electrons are attracted, building an accumulation layer close to the Si/oxide interface, and a hole current is formed by tunneling through the oxide layer.…”

Section: Contributedmentioning

confidence: 97%

Silicon based IR light emitters

Kittler

Mchedlidze

Arguirov

et al. 2009

Phys. Status Solidi (c)

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A new concept for Si‐based light emitting diodes (LED) capable of emitting at 1.5 μm is proposed. It utilizes D‐band radiation from dislocations in Si. Whether a dislocation network created in a reproducible manner by Si wafer direct bonding or dislocation loops produced by Si ion implantation are employed. It is also stated that dislocation loops do not lead to the strong band‐to‐band electroluminescence at 1.1 μm of p‐n diodes, as it was predicted in the literature. A MOS‐LED (Fig. A) and p‐n LEDs emitting at 1.5 μm are demonstrated by the authors. The maximum efficiency that could be achieved at room temperature is close to 1%. Levels in the bandgap which are probably involved in the formation of the D1‐line at 1.5 μm are revealed. Moreover, the observation of the Stark effect for the D1‐line is reported. Namely, a red/blue‐shift of peak position was observed in electro‐ and photo‐luminescence when the electric field in the p‐n LED was increased/lowered. This effect may allow realization of a novel Si‐based light emitter with electric field modulated emission wavelength. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes

Cited by 84 publications

References 7 publications

Light emission and detection by metal oxide silicon tunneling diodes

Light emission and detection by metal oxide silicon tunneling diodes

Phonon-assisted transient electroluminescence in Si

Silicon based IR light emitters

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