Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si

Oehme, Michael; Werner, Jürgen; Gollhofer, Martin; Schmid, M.; Kaschel, Mathias; Kasper, E.; Schulze, J.

doi:10.1109/lpt.2011.2169052

Cited by 94 publications

(62 citation statements)

References 23 publications

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“…A number of groups have utilized this approach to fabricate n-Ge/i-Ge 1-y Sn y /p-Ge heterostructure light emitting diodes (LEDs) in which the GeSn active layers are ensconced by p-and n-type Ge electrodes. 4,5,[22][23][24][25] A drawback of such designs, however, is the formation of two defected Ge 1-y Sn y /Ge interfaces that act as carrier recombination sites, adversely affecting the emission efficiency of the devices. Our previous work in this area was focused on the fabrication of enhanced performance LEDs by adopting improved n-Ge/i-Ge 1-y Sn y /p-Ge 1-z Sn z designs containing a single defected interface.…”

Section: Synthetic Approachmentioning

confidence: 99%

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne

Wallace

Gallagher

et al. 2016

Journal of Applied Physics

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Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%–16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectures incorporating Ge1-xSnx intermediate layers (x ∼ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1-x-ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account the latest experimental and theoretical work on band offsets involving such materials.

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Section: Synthetic Approachmentioning

confidence: 99%

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne

Wallace

Gallagher

et al. 2016

Journal of Applied Physics

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“…1 Among the various material systems that could be integrated on Si, the Ge 1Àx Sn x alloy has attracted much attention recently due to the following reasons: (1) Capability of monolithic integration on Si; 2 (2) Availability of direct bandgap material; 3 and (3) tunable bandgap covering broad shortwave-and mid-infrared (IR) wavelength range. 4 During the last decade, the GeSn-based optically pumped laser, 5 light emitting diode, [6][7][8][9][10][11][12] photo detector [13][14][15][16][17][18][19][20] have been demonstrated, and the GeSn modulator has been investigated 21,22 which make up a complete set of components for Si photonics. For these prototype devices, the material characteristics have turned out to be the decisive factor for the performance of the device.…”

Section: Introductionmentioning

confidence: 99%

Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%

Al-Kabi

Ghetmiri

Margetis

et al. 2015

Journal of Elec Materi

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Optical properties of germanium tin (Ge 1Àx Sn x ) alloys have been comprehensively studied with Sn compositions from 0 (Ge) to 12%. Raman spectra of the GeSn samples with various Sn compositions were measured. The room temperature photoluminescence (PL) spectra show a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Temperature dependent PL shows the PL intensity variation along with the temperature change, which reveals the indirectness or directness of the bandgap of the material. As temperature decreases, the PL intensity decreases with Sn composition less than 8%, indicating the indirect bandgap Ge 1Àx Sn x ; while the PL intensity increases with Sn composition higher than 10%, implying the direct bandgap Ge 1Àx Sn x . Moreover, the PL study of n-doped samples shows bandgap narrowing compared to the unintentionally (Boron) doped thin film with similar Sn compositions due to the doping.

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“…[1][2][3][4][5][6][7][8][9] The successful demonstration of direct bandgap GeSn light emitting diodes (LEDs), and optically-pumped GeSn lasers, [10][11][12][13][14] indicates the great potential of GeSn for Si-based light sources. GeSn LEDs with double heterostructures (DHS) 11,[15][16][17][18][19][20][21][22] and quantum wells (QWs) [23][24][25][26][27][28][29][30][31] have been reported. It is generally acknowledged that the QW structures could be applied to the LEDs and lasers to improve their device performance.…”

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confidence: 99%

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

et al. 2018

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This paper reports the comprehensive characterization of a Ge0.92Sn0.08/Ge0.86Sn0.14/Ge0.92Sn0.08 single quantum well. By using a strain relaxed Ge0.92Sn0.08 buffer, the direct bandgap Ge0.86Sn0.14 QW was achieved, which is unattainable by using only a Ge buffer. Band structure calculations and optical transition analysis revealed that the quantum well features type-I band alignment. The photoluminescence spectra showed dramatically increased quantum well peak intensity at lower temperature, confirming that the Ge0.86Sn0.14 quantum well is a direct bandgap material.

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Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si

Cited by 94 publications

References 23 publications

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

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