Room temperature electroresistance in Sr2−xGdxMnTiO6 perovskites (0≤x≤1)

Magnetic, magnetoelectric, magnetodielectric and magnetoresistance studies on CuO doped Sr2Bi4Ti5O18 lead free ferroelectric ceramics

“…Biskup et. al., reported small negative magnetoresistance value in Sr and Ti containing double perovskites by applying higher magnetic fields, and they observed a maximum room temperature negative20 MR value of 0.44 % at 5T[61]. In our case, for x = 0 and 0.75 samples show ~ 4 % of MR at 0.85T, which is nearly ten times greater than that of the titanium double perovskites.The observed MR value is also due to the spontaneous magnetization present in the sample and the presence of Cu 2+ and Bi 3+ ions.…”

Dielectric response of ceramic Sr2−xBixTi2−xFexO6 (0≤x≤1.5) perovskites

“…In these systems, interesting behaviors appear for x values above 0.5: colossal magnetoresistance, relaxor ferromagnetism and giant electro-resistance for the La, Bi and Gd derivatives, respectively [14][15][16]. These phenomena have been interpreted in terms of local inhomogeneity and mixed valence of metal cations, closely connected to microstructural characteristics.…”

Mapping Chemical Disorder and Ferroelectric Distortions in the Double Perovskite Compound Sr2-xGdxMnTiO6 by Atomic Resolution Electron Microscopy and Spectroscopy

“…The underlying principle of RRAM is electroresistance (ER), i.e. It was found that Sr 2 − x Gd x MnTiO 6 double perovskites exhibit ER that becomes giant as x → 1 (Biškup et al, 2011). ER can be achieved either through ferroelectric (FE) tunnel junctions (Garcia et al, 2009;Chanthbouala et al, 2012), redox-based resistive switching (Waser et al, 2009;Akinaga & Shima, 2010) or through processes of current percolation through local inhomogeneities (Kwon et al, 2010).…”