Room temperature ferromagnetic n-type semiconductor in (In1−xFex)2O3−σ

Xu, Shaohai; Yoo, Yungpil; Xue, Q. K.; Lee, Hyung Chul; Cheng, Shifan; Xiang, X.‐D.; Dionne, Gerald F.; Takeuchi, Ichiro

doi:10.1063/1.1851618

Cited by 159 publications

(99 citation statements)

References 19 publications

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“…Both the near edge and EXAFS spectra are very similar to those from pure Fe 3 O 4 , as shown in Fig. 2 [15], but this was not seen here. The near edge shows a slight shift to lower energy, indicating the possibility of a small amount of additional Fe(2+) or Fe(0).…”

Section: Structural Analysissupporting

confidence: 58%

“…Recently there have been a number of papers reporting ferromagnetism in In 2 O 3 films [9][10][11][12][13][14][15][16] doped with transition metal ions. In many oxides there has been a debate over the question of whether the magnetism is due to intrinsic properties of the host matrix containing transition metal ions on the cation sites or whether the magnetism is due to impurity phases.…”

Section: Introductionmentioning

confidence: 99%

“…This controversy has also existed for Fe-doped In 2 O 3 where the expected impurity phase is Fe 3 O 4 . Some authors have reported that the Fe enters the lattice substitutionally for concentrations as high as 20% [14,15] so that the magnetism is intrinsic; however, there are also reports that the magnetism is due to ferromagnetic inclusions of Fe 2 O 3 [17]. Some films have also been made to contain nanophases of Fe 3 O 4 by including nanoparticles in the target for pulsed laser deposition (PLD) [18] or by using a special substrate [19].…”

Section: Introductionmentioning

confidence: 99%

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Magnetic properties ofIn2O3containingFe3O4nanoparticles

et al. 2014

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Films of Fe-doped In 2 O 3 that were deliberately fabricated so they contained Fe 3 O 4 nanoparticles were deposited on sapphire substrates by pulsed laser deposition at low oxygen pressure. The concentration of Fe was varied between 1% and 5%, and the effect of including 5% of Sn and vacuum annealing were also investigated. Structural analysis indicated a high concentration of Fe 3 O 4 nanoparticles that caused substantial values of the coercive field at room temperature. Transport measurements indicated that the films were metallic, and an anomalous Hall effect was observed for the sample with 5% of Fe. The concentration of nanoparticles was reduced dramatically by the inclusion of 5% of Sn. Magnetic circular dichroism spectra taken in field and at remanence were analyzed to show that the samples had a magnetically polarized defect band located below the conduction band as well as magnetic Fe 3 O 4 nanoparticles. The signal from the defect states near the band edge was enhanced by increasing the number of carriers by either including Sn or by annealing in vacuum.

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Section: Structural Analysissupporting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Magnetic properties ofIn2O3containingFe3O4nanoparticles

et al. 2014

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“…Oxide systems based on host semiconductor with high solubility of magnetic ions are highly desirable to form thermodynamically stable magnetic semiconductors. Yoo et al 19 , in search of oxide based spintronic materials, have discovered by combinatorial methodology a ferromagnetic semiconductor system in (In 1-x 20 reported preparation of thin films of Cu co-doped (In 1-x Fe x ) 2 O 3-y . It was also shown that in bulk and thin films, RTF disappears if it is not co-doped with Cu or when subjected to annealing in oxygen atmosphere.…”

mentioning

confidence: 99%

Structural and magnetic properties of (In1−xFex)2O3 (0.0⩽x⩽0.25) system: Prepared by gel combustion method

Jayakumar

Gopalakrishnan

Kulshreshtha

et al. 2007

Applied Physics Letters

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Abstract:(In 1-x Fe x ) 2 O 3 polycrystalline samples with x = (0. 0, 0.05, 0.10, 0.15, 0.20 and 0.25) have been synthesized by a gel combustion method. Reitveld refinement analysis of X ray diffraction data indicated the formation of single phase cubic bixbyite structure without any parasitic phases. This observation is further confirmed by high resolution transmission electron microscopy (HRTEM) imaging, and indexing of the selected-area electron diffraction (SAED) patterns, X-ray Absorption Spectroscopy (XAS) and Raman Spectroscopy. DC Magnetization studies as a function of temperature and field indicate that they are ferromagnetic with Curie temperature (T C ) well above room temperature. a Corresponding author Email: ikgopal@barc.gov.in

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“…6 To endow In 2 O 3 with better or special properties, they are often doped by transition metal (TM) ions in order to introduce ferromagnetisms to non-magnetic In 2 O 3 , which is called as diluted magnetic semiconductor (DMSs) and potentially applied in transparent spintronic devices. [7][8][9][10][11][12][13] For example, Farvid et al 14 prepared paramagnetic Cr doped C-In 2 O 3 nanocrystals while Singhal et al 15 synthesized ferromagnetic Fe doped C-In 2 O 3 nanoparticles. In addition, Philip et al 7 could control ferromagnetisms of Cr doped C-In 2 O 3 films by tuning carrier density.…”

Section: Introductionmentioning

confidence: 99%

Different magnetic properties of rhombohedral and cubic Ni2+ doped indium oxide nanomaterials

2011

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Transition metal ions doped indium oxide nanomaterials were potentially used as a kind of diluted magnetic semiconductors in transparent spintronic devices. In this paper, the influences of Ni2+ doped contents and rhombohedral or cubic crystalline structures of indium oxide on magnetic properties were investigated. We found that the magnetic properties of Ni2+ doped indium oxide could be transferred from room temperature ferromagnetisms to paramagnetic properties with increments of doped contents. Moreover, the different crystalline structures of indium oxide also greatly affected the room temperature ferromagnetisms due to different lattice constants and almost had no effects on their paramagnetic properties. In addition, both the ferromagnetic and paramagnetic properties were demonstrated to be intrinsic and not caused by impurities

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Room temperature ferromagnetic n-type semiconductor in (In1−xFex)2O3−σ

Cited by 159 publications

References 19 publications

Magnetic properties ofIn2O3containingFe3O4nanoparticles

Magnetic properties ofIn2O3containingFe3O4nanoparticles

Structural and magnetic properties of (In1−xFex)2O3 (0.0⩽x⩽0.25) system: Prepared by gel combustion method

Different magnetic properties of rhombohedral and cubic Ni2+ doped indium oxide nanomaterials

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