Room temperature ferromagnetism and ferroelectricity in strained multiferroic BiFeO3 thin films on La0.7Sr0.3MnO3/SiO2/Si substrates

Ramírez-Camacho, M.C.; Sánchez-Valdés, C.F.; Gervacio-Arciniega, J. J.; Font, R.; Ostos, C.; Bueno-Baqués, D.; Curiel, Mario; Sánchez-Llamazares, J. L.; Siqueiros, J. M.; Herrera, O. Raymond

doi:10.1016/j.actamat.2017.02.030

Cited by 30 publications

(11 citation statements)

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“…Thin film is the most important material form for the fabrication of devices in the contemporary semiconductor industry, which can promote electronic devices toward miniaturization and integration. Numbers techniques have been developed to fabricate BFO thin film in past years, such as pulsed laser deposition (PLD), [ 2,29,36 ] radio‐frequency (RF) magnetron sputtering, [ 4,37,38 ] molecular beam epitaxy (MBE), [ 39,40 ] and metalorganic chemical vapor deposition (MOCVD), [ 41,42 ] as well as sol–gel/chemical‐solution deposition (CSD). [ 3,43,44 ] As shown in Table 1 , [ 2,4,24,29,30,36,38,41,43–61 ] which lists the reported BFO films with their observed polarization ( P )–electric field ( E ) loops, it has been demonstrated that the physical‐based processing, such as PLD or RF, can deposit relatively dense BFO thin films, that show lower leakage and defects.…”

Section: Current Research Status Of Csd Derived Bfo Filmsmentioning

confidence: 99%

“…BiFeO 3 (BFO), as a unique room‐temperature single‐phase multiferroic material, has undergone considerable investigations with a high ferroelectric Curie temperature of ≈ 1123 K and an antiferromagnetic Néel temperature of ≈650 K, [ 1–7 ] Thus, BFO is considered the most promising candidate for the next‐generation memory and spintronics among various multiferroic materials. In the past research, BFO shows versatile crystal structures and a broad richness of physical properties.…”

Section: Introductionmentioning

confidence: 99%

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Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films

Yang

Jin

Wei

et al. 2019

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Bismuth ferrite (BiFeO3) has recently become interesting as a room‐temperature multiferroic material, and a variety of prototype devices have been designed based on its thin films. A low‐cost and simple processing technique for large‐area and high‐quality BiFeO3 thin films that is compatible with current semiconductor technologies is therefore urgently needed. Development of BiFeO3 thin films is summarized with a specific focus on the chemical solution route. By a systematic analysis of the recent progress in chemical‐route‐derived BiFeO3 thin films, the challenges of these films are highlighted. An all‐solution chemical‐solution deposition (AS‐CSD) for BiFeO3 thin films with different orientation epitaxial on various oxide bottom electrodes is introduced and a comprehensive study of the growth, structure, and ferroelectric properties of these films is provided. A facile low‐cost route to prepare large‐area high‐quality epitaxial BFO thin films with a comprehensive understanding of the film thickness, stoichiometry, crystal orientation, ferroelectric properties, and bottom electrode effects on evolutions of microstructures is provided. This work paves the way for the fabrication of devices based on BiFeO3 thin films.

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Section: Current Research Status Of Csd Derived Bfo Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films

Yang

Jin

Wei

et al. 2019

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“…. The SPM behavior for the LSMO systems has been reported in studies on 12 nm single-domain nanoparticles obtained by joint deposition 16 or 20 nm multidomain nanoparticles prepared via sol-gel 28 ; but, as far as it has been possible to review, such behavior in LSMO thin films have only been reported in our own previous report 29 .…”

mentioning

confidence: 93%

“…The observed SPM state on the nanostructured LSMO layers can be associated to interacting ferromagnetic monodomain nanoregions, whose average size should be smaller than a certain critical size as a condition to transit from a macroscopic ferromagnetic interaction to a macroscopic paramagnetic behavior [27][28][29][30][31][32] . These nanoregions, delimited with dashed lines in Fig 4b,d, are induced by the local constrain of the SiO 2 surface as was discussed above, but without appreciable grain boundaries for both samples.…”

mentioning

confidence: 99%

Superparamagnetic state in La0.7Sr0.3MnO3 thin films obtained by rf-sputtering

Camacho

Sánchez-Valdés

Curiel

et al. 2020

Sci Rep

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A novel superparamagnetic state has been observed in high quality La 0.7 Sr 0.3 Mno 3 (LSMO) thin films directly grown by rf-sputtering on SiO x /Si(100) substrates. The films are nanostructured without grain boundaries, constituted by locally epitaxial nanoregions grown layer-by-layer with out-of-plane (012) preferential orientation, induced by the constrain of the native silicon oxide. Low magnetic field ZFC-FC magnetization curves show a cross-over from superparamagnetic to ferromagnetic state dependent of the thickness. The thicker film (140 nm) exhibits typical ferromagnetic order. The thinner films (40 and 60 nm) exhibit superparamagnetic behavior attributed to interacting ferromagnetic monodomain nanoregions with critical size, random in-plane oriented, where the inter-monodomain boundaries with surface spin-glass structure regulate the blocking of magnetization depending on the magnetic field intensity. M(H) hysteresis loops showed noticeable coercive fields in all samples, larger than those reported for LSMO. Such properties of half-metal LSMO film foresee potential integration in new Sitechnology nanodevices in Spintronics.

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“…As an effective approach, stress/strain engineering has been generally employed to regulate the microstructures [27,28] and properties of ferroelectric materials, such as ferroelectricity, [29][30][31][32] piezoelectricity, [33][34][35][36] energy-storage performance, [37][38][39] and ECE. [16,[40][41][42][43][44] Considering the practical application, the cooling temperature range of the ECE is mainly expected to be around room temperature.…”

Section: Introductionmentioning

confidence: 99%

Designed Giant Room‐Temperature Electrocaloric Effects in Metal‐Free Organic Perovskite [MDABCO](NH₄)I₃ by Phase–Field Simulations

Gao

Shi

Wang

et al. 2021

Adv Funct Materials

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Achieving a colossal room-temperature electrocaloric effect is essential for practical solid-state refrigeration applications with low-cost and highefficiency. Here, through the design of applying external stimuli (hydrostatic pressure and misfit strain), giant room-temperature electrocaloric effects in the bulk and thin film of metal-free organic perovskite [MDABCO](NH 4 )I 3 are obtained by using a combination of thermodynamic calculations and phasefield simulations. Under the hydrostatic pressure of 1 GPa, there emerges excellent room-temperature (300 K) electrocaloric performance with the temperature change (ΔT) of 8.41 K at 30 MV m −1 and electrocaloric strength (ΔT/ΔE) of 0.63 K m MV −1 at 10 MV m −1 , respectively. The prominent electrocaloric effects of MDABCO(NH 4 )I 3 may be related to its rapid change rates of free energy barrier height. Additionally, it can be found that some stripe domains and non-180° domain walls form in the [MDABCO](NH 4 )I 3 bulk, which is consistent with the experimental results. This work not only provides new insights into organic perovskite [MDABCO](NH 4 )I 3 , but also guides for further developing to realize remarkable room-temperature electrocaloric cooling.

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Room temperature ferromagnetism and ferroelectricity in strained multiferroic BiFeO3 thin films on La0.7Sr0.3MnO3/SiO2/Si substrates

Cited by 30 publications

References 57 publications

Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films

Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films

Superparamagnetic state in La0.7Sr0.3MnO3 thin films obtained by rf-sputtering

Designed Giant Room‐Temperature Electrocaloric Effects in Metal‐Free Organic Perovskite [MDABCO](NH₄)I₃ by Phase–Field Simulations

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Room temperature ferromagnetism and ferroelectricity in strained multiferroic BiFeO3 thin films on La0.7Sr0.3MnO3/SiO2/Si substrates

Cited by 30 publications

References 57 publications

Chemical Solution Route for High‐Quality Multiferroic BiFeO3 Thin Films

Chemical Solution Route for High‐Quality Multiferroic BiFeO3 Thin Films

Superparamagnetic state in La0.7Sr0.3MnO3 thin films obtained by rf-sputtering

Designed Giant Room‐Temperature Electrocaloric Effects in Metal‐Free Organic Perovskite [MDABCO](NH4)I3 by Phase–Field Simulations

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Product

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Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films

Chemical Solution Route for High‐Quality Multiferroic BiFeO₃ Thin Films

Designed Giant Room‐Temperature Electrocaloric Effects in Metal‐Free Organic Perovskite [MDABCO](NH₄)I₃ by Phase–Field Simulations