Room temperature ferromagnetism of GaN:Mn thin films grown by low pressure metal-organic chemical vapor deposition by mn periodic delta-doping

Chen, Z.T.; Su, Yuanchang; Yang, Zhiguo; Zhang, B.; Xu, Ke; Yang, Xuelin; Pan, Yingjun; Zhang, G.Y.

doi:10.1016/j.jcrysgro.2006.11.034

Cited by 12 publications

(4 citation statements)

References 8 publications

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“…Proton induced X-ray emission (PIXE) technique was employed to examine the content of Mn. Figure 1(a) shows the PIXE spectrum of the sample investigated in this work, which reveals that the Mn concentration is 3.8% [13]. The result of secondary ion mass spectroscopy (SIMS) measurements indicated the uniform distribution of Mn composition along the growth direction [13].…”

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confidence: 84%

“…Figure 1(a) shows the PIXE spectrum of the sample investigated in this work, which reveals that the Mn concentration is 3.8% [13]. The result of secondary ion mass spectroscopy (SIMS) measurements indicated the uniform distribution of Mn composition along the growth direction [13]. Detailed analysis of the results of X-ray diffraction (XRD) revealed that no secondary phases were found within experimental detection limits.…”

mentioning

confidence: 85%

“…The GaN: Mn films were epitaxially grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates, using Bis (methylcyclopentadienyl) manganese (MCP 2 Mn) as manganese source and H 2 as carrier gas, respectively [13]. Proton induced X-ray emission (PIXE) technique was employed to examine the content of Mn.…”

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confidence: 99%

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Accurate characterization of room-temperature long range magnetic order in GaN: Mn by magnetic force microscope

Zhang

Lin

Chen

et al. 2010

Sci. China Technol. Sci.

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Room-temperature ferromagnetism with a Curie temperature higher than 380 K was studied in GaN: Mn thin films grown by metal-organic chemical vapor deposition. By etching artificial microstructures on the GaN: Mn layer, strong magnetic responses were observed in the magnetic force microscopy (MFM) measurement, which revealed that the films were independent of dopant particles and clusters. Numerical simulation on the data of atomic force microscope (AFM) and MFM measurements covering the whole microstructure validated the formation of long range magnetic order. This result excluded a variety of controversial origins of room-temperature ferromagnetism in the GaN: Mn and gave a strong evidence of our GaN: Mn as the intrinsic diluted magnetic semiconductor (DMS). The forwarded method for accurate characterization of long range magnetic order could be applied to a wide range of DMS and diluted magnetic oxide (DMO) systems.GaN: Mn, diluted magnetic semiconductor, atomic force microscope, magnetic force microscope, room-temperature long range magnetic order Citation:Zhang Y H, Lin Z Y, Chen Z T, et al. Accurate characterization of room-temperature long range magnetic order in GaN: Mn by magnetic force microscope.Over the last several years, diluted magnetic semiconductors (DMS) have attracted increasing attention due to their potential application in spintronics devices, which exploit spin in magnetic materials as well as charge of electrons in semiconductors. Comprehensive experimental efforts have been stimulated by results of computations and predictions, which have substantiated the possibility of robust ferromagnetism in a variety of systems [1]. Indeed, many research groups have reported the observation of a ferromagnetism well above room temperature for a wide range of III-V and II-VI DMSs, including transition-metal-doped ZnO and GaN, and diluted magnetic oxides (DMO)[2].However, the origin of the room-temperature ferromagnetism in DMSs and DMOs has begun to emerge as one of the most unsettled problems. The aroused problem is attributable to the lack of a magnetic characterizing method in microscopy scale. Most of the reports that discussed observation of ferromagnetism primarily based on magnetic hysteresis measurement, which could not clarify magnetic origins especially for weak magnets in DMS. It has been found that there are many mechanisms that could be responsible for the signals of magnetic hysteresis, such as ferromagnetic clusters [3], second phases [4,5], substrates [6], interface [7], and other external pollution [8]. Some other charactering methods, such as MCD, could only be applied to a few systems [9]. Thus, a more effective magnetic characterizing

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confidence: 85%

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Accurate characterization of room-temperature long range magnetic order in GaN: Mn by magnetic force microscope

Zhang

Lin

Chen

et al. 2010

Sci. China Technol. Sci.

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“…It is well known that ion implantation has many advantages including independent control of the doping level, selective area doping, the ability to fabricate planar devices and self-aligned structures without any limitation of solubility. At present, little is known about unintentionally doped GaN epilayers implanted with Mn ions, although some experimental studies on the magnetic characteristics of GaN-based DMSs have been reported [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Possible origin of room-temperature ferromagnetism in undoped GaN epilayers implanted with Mn ions

Zhang

et al. 2009

Journal of Magnetism and Magnetic Materials

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Electronic and magnetic behavior of transition metal-doped cubic gallium nitride: first-principles calculations

Parra

López

2018

Journal of Magnetism and Magnetic Materials

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Room temperature ferromagnetism of GaN:Mn thin films grown by low pressure metal-organic chemical vapor deposition by mn periodic delta-doping

Cited by 12 publications

References 8 publications

Accurate characterization of room-temperature long range magnetic order in GaN: Mn by magnetic force microscope

Accurate characterization of room-temperature long range magnetic order in GaN: Mn by magnetic force microscope

Possible origin of room-temperature ferromagnetism in undoped GaN epilayers implanted with Mn ions

Electronic and magnetic behavior of transition metal-doped cubic gallium nitride: first-principles calculations

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