Room temperature field-free switching of CoFeB/MgO heterostructure based on large-scale few-layer WTe2

Wang, Xinran; Wu, Hao; Qiu, Ruizhi; Huang, Xingguo; Zhang, Junrong; Long, Jingwei; Yao, Yuxuan; Zhao, Yongqiang; Zhu, Zhaohui; Wang, Junyong; Shi, Shu; Chang, Haixin; Zhao, Wei

doi:10.1016/j.xcrp.2023.101468

Cited by 10 publications

(7 citation statements)

References 43 publications

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“…This can bring characteristics that are not affected by external magnetic fields and may make the structure of MTJs simpler, although the deposition process of antiferromagnetic tunnel junctions may be more complex [61]. Additionally, 2D material-based MTJs can achieve field-free switching, a major obstacle for practical applications of PMA-MTJs, due to their low symmetry properties [157,158]. Furthermore, perovskites bring multiferroic properties and possess the potential for multi-state multiferroic memories and ferroelectric control of spin polarization for spintronics applications [159].…”

Section: Future Perspectivesmentioning

confidence: 99%

Tunneling magnetoresistance materials and devices for neuromorphic computing

et al. 2023

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Artificial intelligence has become indispensable in modern life, but its energy consumption has become a significant concern due to its huge storage and computational demands. Artificial intelligence algorithms are mainly based on deep learning algorithms, relying on the backpropagation of convolutional neural networks or binary neural networks. While these algorithms aim to simulate the learning process of the human brain, their low bio-fidelity and the separation of storage and computing units lead to significant energy consumption. The human brain is a remarkable computing machine with extraordinary capabilities for recognizing and processing complex information while consuming very low power. Tunneling magnetoresistance (TMR)-based devices, namely magnetic tunnel junctions (MTJs), have great advantages in simulating the behavior of biological synapses and neurons. This is not only because MTJs can simulate biological behavior such as Spike-Timing Dependent Plasticity(STDP) and Leaky Integrate-Fire(LIF), but also because MTJs have intrinsic stochastic and oscillatory properties. These characteristics improve MTJs' bio-fidelity and reduce their power consumption. MTJs also possess advantages such as ultrafast dynamics and non-volatile properties, making them widely utilized in the field of neuromorphic computing in recent years. We conducted a comprehensive review of the development history and underlying principles of TMR, including a detailed introduction to the material and magnetic properties of MTJs and their temperature dependence. We also explored various writing methods of MTJs and their potential applications. Furthermore, we provided a thorough analysis of the characteristics and potential applications of different types of MTJs for neuromorphic computing. TMR-based devices have demonstrated promising potential for broad application in neuromorphic computing, particularly in the development of spiking neural networks. Their ability to perform on-chip learning with ultra-low power consumption makes them an exciting prospect for future advances in the era of the Internet of Things.

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Section: Future Perspectivesmentioning

confidence: 99%

Tunneling magnetoresistance materials and devices for neuromorphic computing

et al. 2023

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“…Belonging to the family of TMDs, WTe 2 has been proved to be successfully prepared by chemical vapor deposition [17]. Graphene-like layered structure of WTe 2 has a wide direct band gap, exhibiting excellent semi-conductivity, semimetallic magnetic and optical properties, which can be widely used in new energy fields such as optoelectronic devices, highpower energy storage systems, photovoltaic catalysis [18].…”

Section: Introductionmentioning

confidence: 99%

Tunable electronic and optical properties of BAs/WTe₂ heterostructure for theoretical photoelectric device design

Luo,

Wei,

Wang

et al. 2024

J. Phys.: Condens. Matter

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The geometric structure of the BAs/WTe2 heterojunction was scrutinized by employing ab initio calculations grounded on Density Functional Theory (DFT). Multiple configurations are constructed to determine the equilibrium state of the heterojunction with optimal stability. The results show that the H1-type heterojunction with interlayer distance of 3.92Å exhibits exceptional stability and showcases a conventional Type-II band alignment, accompanied by a direct band gap measuring 0.33 eV. By applying external electric field and introducing strain, one can efficaciously modulate both the band gap and the quantity of charge transfer in the heterojunction, accompanied by the transition of band alignment from Type-II to Type-I, which makes it expected to achieve broader applications in light-emitting diodes, laser detectors and other fields. Ultimately, the heterojunction undergoes a transformation from a semiconducting to a metallic state. Furthermore, the outstanding optical characteristics inherent to each of the two monolayers are preserved, the BAs/WTe2 heterojunction also serves to enhance the absorption coefficient and spectral range of the material, particularly within the ultraviolet spectrum. It merits emphasis that the optical properties of the BAs/WTe2 heterojunction are capable of modification through the imposition of external electric fields and mechanical strains, which will expand its applicability and potential for future progression within the domains of nanodevices and optoelectronic apparatus.

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“…The availability of lower thermal conductivity WTe 2 films gives rise to more potential for its use in electronic devices. However, the inactivity of tellurium makes it more challenging to prepare WTe 2 films, making industrial preparation crucial for their next production applications [ 11 , 12 , 13 , 14 , 15 , 16 ]. Although there have been some studies on WTe 2 , there have been relatively few technical studies on the direct growth of WTe 2 on W thin films.…”

Section: Introductionmentioning

confidence: 99%

Direct Growth of Low Thermal Conductivity WTe2 Nanocrystalline Films on W Films

Yu,

Tao,

Guo

et al. 2024

Nanomaterials

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WTe2 has attracted much attention because of its layered structure and special electronic energy band structure. However, due to the difficulty of evaporating the W element itself and the inactivity of the Te element, the obtained large-area WTe2 thin films are usually accompanied by many defects. In this paper, WTe2 nanocrystalline films were successfully prepared on quartz substrates using magnetron sputtering and chemical vapor deposition techniques. Various analytical techniques such as X-ray Diffraction, Raman spectra, X-ray Photoelectron Spectroscopy, Scanning Electron Microscope, and photoluminescence spectra are employed to analyze the crystal structure, composition, and morphology. The effects of different tellurization temperatures and tellurization times on the properties of WTe2 thin films were investigated. WTe2 nanocrystalline films with good crystallinity were obtained at 600 °C for 30 min. The thermal conductivity of the WTe2 films prepared under this condition was 1.173 Wm−1K−1 at 300 K, which is significantly higher than that of samples prepared using other methods.

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Room temperature field-free switching of CoFeB/MgO heterostructure based on large-scale few-layer WTe2

Cited by 10 publications

References 43 publications

Tunneling magnetoresistance materials and devices for neuromorphic computing

Tunneling magnetoresistance materials and devices for neuromorphic computing

Tunable electronic and optical properties of BAs/WTe₂ heterostructure for theoretical photoelectric device design

Direct Growth of Low Thermal Conductivity WTe2 Nanocrystalline Films on W Films

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Room temperature field-free switching of CoFeB/MgO heterostructure based on large-scale few-layer WTe2

Cited by 10 publications

References 43 publications

Tunneling magnetoresistance materials and devices for neuromorphic computing

Tunneling magnetoresistance materials and devices for neuromorphic computing

Tunable electronic and optical properties of BAs/WTe2 heterostructure for theoretical photoelectric device design

Direct Growth of Low Thermal Conductivity WTe2 Nanocrystalline Films on W Films

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Tunable electronic and optical properties of BAs/WTe₂ heterostructure for theoretical photoelectric device design