Room-temperature growth of single-crystalline TiO2 thin films on nanometer-scaled substrates by dc magnetron sputtering deposition

Izumi, Tomohisa; Teraji, Tokuyuki; Ito, Toshimichi

doi:10.1016/j.jcrysgro.2006.11.204

Cited by 8 publications

(3 citation statements)

References 11 publications

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“…Among them, the anatase phase has found substantial application in hybrid devices composed of organic-inorganic components, flexible electronics, antireflection coatings, etc. [12][13][14] Moreover, anatase is known to be a better option than rutile for photocatalytic application. [15] This enhancement in photocatalytic activity has been attributed to i) a larger bandgap of anatase than rutile, which raises the maximum of the valence band to higher energy levels compared to the redox potential of adsorbed molecules, increasing the oxidation capacity of electrons, [16] ii) surface properties, which play a vital role in the adsorption of molecules and subsequent transfer of charge to the molecules.…”

Section: Introductionmentioning

confidence: 99%

Correlating the Nonlinear Roughening and Optical Properties of Anatase Thin Films—A Fractal Geometric Approach

Das

Jaiswal

Borah

et al. 2023

Advcd Theory and Sims

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The anatase phase of TiO2 is highly suitable for photocatalytic application consequently, prerequisite an unpretentious scale‐independent understanding of its roughening‐facilitated surface topography dynamics. Herein, the nonlinear roughening in anatase thin films and its correlation with the nonlinear trend of optical properties in the framework of fractal geometry are investigated. The self‐affine nature of analyzed surfaces is confirmed from the autocorrelation function. The dynamic scaling exponents indicate the existence of Kardar–Parisi–Zhang scaling in surface growth. In addition, the trend of generalized Hurst exponent and mass exponent indicates insignificant multifractal characteristics in the analyzed surfaces. Moreover, fractal analysis explains and aids to description of roughening trend from stereometric and Minkowski functionals analysis. Furthermore, the significance of fractal dimension for probing the surface roughening is validated from the principal component analysis. Consequently, variation in optical bandgap and linear refractive index are investigated in regards to the fractal dimension and root mean‐squared surface slope and regression equations are proposed for tuning of bandgap.

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Section: Introductionmentioning

confidence: 99%

Correlating the Nonlinear Roughening and Optical Properties of Anatase Thin Films—A Fractal Geometric Approach

Das

Jaiswal

Borah

et al. 2023

Advcd Theory and Sims

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“…Also, because its high refractive index (n ≈ 2.5) and optical transparency in the visible range, the rutile phase was applied as dielectric interference filters, antireflective coating, optical wave guides, etc. However, the performance of thin film electronic devices depend substantially on crystalline quality and orientation of the films employed [5]. Thus, numerous efforts have been done to improve the film quality by means of several kinds of growth techniques.…”

Section: Introductionmentioning

confidence: 99%

Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering

et al. 2010

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In this work is investigated the optimal conditions for deposition of pure-phase anatase and rutile thin films prepared at low temperatures (less than 150 0 C) by reactive dc magnetron sputtering onto well-cleaned p-type Si substrates. For this, the variation of deposition plasma parameters as substrate-to-target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between −200 and −300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied.

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“…Nonetheless, elevated temperature deposition can induces degradation of layered structures as interfacial ECS Transactions, 9 (1) 189-197 (2007) 10.1149/1.2766888 © The Electrochemical Society reaction, inter-diffusion and other defects on the film formation. These problems are the main reason to explain the low performance or even fail presented in some fabricated devices (5).…”

Section: Introductionmentioning

confidence: 99%

Effect of the Substrate Heating Due to the Sputtering Process on the Crystallinity of TiO2 Thin Films

Toku¹,

Pessoa²,

Liberato³

et al. 2007

ECS Trans.

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This article reports on the effect of the increase of substrate temperature due to the plasma discharge on the crystalline structure of the TiO 2 thin films deposited on silicon by the magnetron sputtering technique. The influence on the film crystallinity was evaluated as a function of process parameters, such as, substrate-to-target distance and reactive gas concentration. The substrate holder was equipped with two thermocouples in order to measure simultaneously the substrate temperature T s and the substrate surface temperature T surf during the deposition. The films were analyzed by X-ray diffractometry (XRD) and profilometry. Results show that the critical temperature to obtain crystalline films depends upon the gas composition and it varies from 170ºC -210ºC for oxygen concentration in the gas mixture varying from 20 to 100%.

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Room-temperature growth of single-crystalline TiO2 thin films on nanometer-scaled substrates by dc magnetron sputtering deposition

Cited by 8 publications

References 11 publications

Correlating the Nonlinear Roughening and Optical Properties of Anatase Thin Films—A Fractal Geometric Approach

Correlating the Nonlinear Roughening and Optical Properties of Anatase Thin Films—A Fractal Geometric Approach

Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering

Effect of the Substrate Heating Due to the Sputtering Process on the Crystallinity of TiO2 Thin Films

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