2008
DOI: 10.1016/j.snb.2008.03.003
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Room-temperature H2S gas sensing at ppb level by single crystal In2O3 whiskers

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Cited by 273 publications
(123 citation statements)
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“…As a nanowire it is quite difficult to obtain due to its cubic cell. Probably this is the reason why there are less articles describing its gas sensing application with respect to those on SnO 2 [15,[56][57][58][59][60]. Single nanowires and bundles of In 2 O 3 nanowires were used as gas sensors.…”
Section: Chemoresistive Sensing Properties Of In 2 O 3 Nanowiresmentioning
confidence: 99%
See 1 more Smart Citation
“…As a nanowire it is quite difficult to obtain due to its cubic cell. Probably this is the reason why there are less articles describing its gas sensing application with respect to those on SnO 2 [15,[56][57][58][59][60]. Single nanowires and bundles of In 2 O 3 nanowires were used as gas sensors.…”
Section: Chemoresistive Sensing Properties Of In 2 O 3 Nanowiresmentioning
confidence: 99%
“…Kaur et al [59] reported the use of single crystalline whiskers of very large size (100-300 mm in diameter) for H 2 and NO gas sensing at room temperature. Even if the dimension of the wire is huge, which also means high conductance of the wire (current was of the order of 10 ohm), space charge induced by gas adsorption at the surface of the whisker is sufficient to give a response to 200 ppb of H 2 S at room temperature.…”
Section: Chemoresistive Sensing Properties Of In 2 O 3 Nanowiresmentioning
confidence: 99%
“…Produces damage in breathing system to human and animals. Further, it can cause a malodor-nuisance problem even at relatively low concentrations [7]. H 2 S is an intermediate in the synthesis of organothiol compounds and elemental sulphur.…”
Section: Introductionmentioning
confidence: 99%
“…It has been shown that bulk ÎČ-In 2 S 3-3x O 3x has an optical band gap that varies from 2.1 eV in pure ÎČ-In 2 S 3 to 2.9 eV when it contains 8.5 at.% of oxygen and has been proposed as an alternative to CdS buffer layers in CuIn x Ga 1-x Se 2 solar cells [12,13]. In addition, the post growth processing of Sn-doped In 2 O 3 NWs under H 2 S at different temperatures is important in understanding their properties and limitations as gas sensors which so far has been considered only up to 250°C [14][15][16].…”
Section: Introductionmentioning
confidence: 99%