Sn-doped In 2 O 3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800°C and then exposed to H 2 S between 300 to 600°C. We observe the existence of cubic bixbyite In 2 O 3 and hexagonal SnS 2 after processing the Sn:In 2 O 3 nanowires to H 2 S at 300°C but also cubic bixbyite In 2 O 3 , which remains dominant, and the emergence of rhombohedral In 2 (SO 4 ) 3 at 400°C. The resultant nanowires maintain their metallic-like conductivity, and exhibit photoluminescence at 3.4 eV corresponding to band edge emission from In 2 O 3 . In contrast, Sn:In 2 O 3 nanowires grown on glass at 500°C can be treated under H 2 S only below 200°C which is important for the fabrication of Cu 2 S/Sn:In 2 O 3 core-shell p-n junctions on low-cost transparent substrates such as glass suitable for quantum dot-sensitized solar cells.