Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots

Abstract

We report room-temperature injection lasing of self-assembled InP/GaInP quantum dots. Stimulated emission occurs via the ground state at λ=728 nm for cavities as short as 0.5 mm. Threshold current densities of 2.3 kA/cm2 and external differential quantum efficiencies of 8.5% have been measured for 2 mm long devices. Light output power as high as 250 mW without saturation effects can be reached in pulsed excitation. Analysis of temperature-dependent laser emission indicates the thermal coupling of charge carriers in different quantum dots at higher temperatures.

Luminescence polarization of ordered GaInP/InP islands

“…͓DOI: 10.1063/1.1539544͔ InP quantum dots ͑QDs͒ and GaInP quantum wells exhibit strong light emission in the visible spectrum of interest for optoelectronic applications, 1,2 where the polarization properties are used in, for instance, light emitting diodes. The islands, which form during overgrowth of InP quantum dots, were studied using scanning tunneling luminescence ͑STL͒ and photoluminescence ͑PL͒.…”

Quantum-dot-induced ordering inGaxIn1−xP/

“…[1][2][3][4][5] The InP/Ga x In 1Ϫx P system exhibits strong emission of light in the longer wavelength region of the visible spectrum and is thus interesting for several applications. [6][7][8] However, the Ga x In 1Ϫx P alloy has a very complex nature both structurally and optically. Transmission electron microscopy 9 ͑TEM͒ and scanning tunneling microscopy 10 ͑STM͒ investigations have shown that under certain conditions atomic long-range ordering may occur in the Ga x In 1Ϫx P alloy.…”

Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots

“…1 The interest stems from both science and technology, which have involved QD's in studies of the fundamental properties as well as for building blocks in optoelectronic devices. 2,3 The local environment of a QD has a considerable impact on the electronic structure both in terms of strain and confinement. Consequently, the effects of a thin capping layer have been investigated for a variety of QD systems, such as InAs/GaAs, 4 -7 InGaAs/GaAs, [8][9][10] InSb/InP, 11 CdSe/ZnSe, 12 SiGe/Si, 13,14 and InP/GaInP.…”