“…[1][2][3] It different functional properties and cross coupled ferroic order parameters make it a potential candidate for nonvolatile memory elements, optical memory devices, abovebandgap photovoltaic devices, micro/nano electromechanical systems, magnetic field sensors, etc. [4][5][6][7][8][9][10] The optical properties of BiFeO 3 (BFO) are also different from most of the perovskite ferroelectric due to its lower bandgap (2.6-2.9 eV) and conducting domain walls. 11,12 Clark and Robertson 13 predicted both direct and indirect bandgaps around 2.5 eV using band structure model, and afterward Ihlefeld et al 14 reported a direct-gap transition at 2.74 eV; however, recently we also found a direct bandgap of 2.55 eV at T ¼ 295 K, an indirect band edge at 2.67 eV.…”