Room-temperature MBE deposition, thermoelectric properties, and advanced structural characterization of binary Bi2Te3 and Sb2Te3 thin films

Peranio, N.; Winkler, Markus; Bessas, Dimitrios; Aabdin, Zainul; Koenig, Jan D.; Boettner, Harald; Hermann, Raphaël P.; Eibl, O.

doi:10.1016/j.jallcom.2012.01.108

Cited by 61 publications

(47 citation statements)

References 36 publications

(70 reference statements)

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“…In summary, the nanoalloying method yields Bi 2 Te 3 and Sb 2 Te 3 thin films with good thermoelectric properties and stoichiometry control as fully discussed in Refs. .…”

Section: Thin Films Based On Bi2te3 Sb2te3 and Bi2te3/sb2te3 Superlamentioning

confidence: 99%

Nanostructure, thermoelectric properties, and transport theory of V₂VI₃ and V₂VI₃/IV–VI based superlattices and nanomaterials

Dankwort

Hansen

Winkler

et al. 2016

Physica Status Solidi (a)

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The scope of this work is to review the thermoelectric properties, the microstructures, and their correlation with theoretical calculations and predictions for recent chalcogenide based materials. The main focus is put on thin multilayered Bi2Te3, Sb2Te3 films, and bulk V2VI3/IV–VI mixed systems. For all films a systematic characterization of the thermoelectric properties as well as the micro‐ and nanostructure was performed. The degree of crystallinity of the multilayered films varied from epitaxial systems to polycrystalline films. Other multilayered thin films revealed promising thermoelectric properties. (SnSe)1.2TiSe2 thin films with rotational disorder yielded the highest Seebeck coefficient published to date for analogous materials. For bulk V2VI3/IV–VI mixed systems insides are given into a complete “material to module” process resulting in a high performance thermoelectric generator using (1–x)(GeTe) x(Bi2Se0.2Te2.8) (x = 0.038). Cyclic heating of this system with x = 0.063 resulted in a drastic change of the micro‐ and nanostructure observed by ex situ and in situ X‐ray diffraction (XRD) and transmission electron microscopy (TEM). Consequently a degradation of ZT at 450 °C from ∼2.0 to ∼1.0 was observed, while samples with x = 0.038 showed a stable ZT of 1.5.

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“…In summary, the nanoalloying method yields Bi 2 Te 3 and Sb 2 Te 3 thin films with good thermoelectric properties and stoichiometry control as fully discussed in Refs. .…”

Section: Thin Films Based On Bi2te3 Sb2te3 and Bi2te3/sb2te3 Superlamentioning

confidence: 99%

Nanostructure, thermoelectric properties, and transport theory of V₂VI₃ and V₂VI₃/IV–VI based superlattices and nanomaterials

Dankwort

Hansen

Winkler

et al. 2016

Physica Status Solidi (a)

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“…Various theoretical models were proposed by various researchers forthe estimation of the third order susceptibility, χ (3) and nonlinear refractive index, n 2 [47]. …”

Section: 36mentioning

confidence: 99%

Effect ofX-ray Irradiation on Structural and Optical Properties of Topological Insulator Bismuth Telluride Nano-Structure Thin Film

Khodiri¹,

Nawar²,

El-Kader³

2016

IOSR

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“…Bi 2 Te 3 ‐based nanowires, thin films, and nanostructured bulk materials as well as CoSb 3 ‐based thin films were prepared to study excitations and thermoelectric properties affected by dimensionality and nanostructuring. Advanced synthesis methods include potential‐pulsed electrodeposition , molecular beam epitaxy (MBE) , and spark plasma sintering (SPS) .…”

Section: Introductionmentioning

confidence: 99%

“…For this, series of Bi 2 Te 3 and CoSb 3 based nanomaterials were synthesized with varying Te and Sb contents, respectively. The chemical composition was accurately measured by wavelength and energy‐dispersive X‐ray spectrometry (WDX and EDX) for Bi 2 Te 3 nanomaterials and by Rutherford backscattering spectrometry (RBS) for CoSb 3 thin films to calibrate preparation parameters with respect to optimum charge carrier density. For CoSb 3 materials transport properties were measured over a wide temperature range up to 700 K. Doping and alloying of binary compounds were used to control charge carrier densities and produce n‐ and p‐type materials which are required for thermoelectric devices.…”

Section: Introductionmentioning

confidence: 99%

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From thermoelectric bulk to nanomaterials: Current progress for Bi₂Te₃ and CoSb₃

Peranio

Eibl

Bäßler

et al. 2015

Physica Status Solidi (a)

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Bi2Te3 and CoSb3 based nanomaterials were synthesized and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT‐limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single‐crystalline, ternary p‐type Bi15Sb29Te56, and n‐type Bi38Te55Se7 nanowires with power factors comparable to nanostructured bulk materials were prepared by potential‐pulsed electrochemical deposition in a nanostructured Al2O3 matrix. p‐type Sb2Te3, n‐type Bi2Te3, and n‐type CoSb3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. This yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p‐type material. Bi2(Te0.91Se0.09)3/SiC and (Bi0.26Sb0.74)2Te3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X‐ray diffraction, nuclear resonance scattering, inelastic neutron scattering, Mössbauer spectroscopy, and transmission electron microscopy. For Bi2Te3 materials, ab‐initio calculations together with equilibrium and non‐equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi2Te3 and CoSb3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoretical modeling were combined to assess and reduce ZT‐limiting mechanisms in these materials.

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Room-temperature MBE deposition, thermoelectric properties, and advanced structural characterization of binary Bi2Te3 and Sb2Te3 thin films

Cited by 61 publications

References 36 publications

Nanostructure, thermoelectric properties, and transport theory of V₂VI₃ and V₂VI₃/IV–VI based superlattices and nanomaterials

Nanostructure, thermoelectric properties, and transport theory of V₂VI₃ and V₂VI₃/IV–VI based superlattices and nanomaterials

Effect ofX-ray Irradiation on Structural and Optical Properties of Topological Insulator Bismuth Telluride Nano-Structure Thin Film

From thermoelectric bulk to nanomaterials: Current progress for Bi₂Te₃ and CoSb₃

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Room-temperature MBE deposition, thermoelectric properties, and advanced structural characterization of binary Bi2Te3 and Sb2Te3 thin films

Cited by 61 publications

References 36 publications

Nanostructure, thermoelectric properties, and transport theory of V2VI3 and V2VI3/IV–VI based superlattices and nanomaterials

Nanostructure, thermoelectric properties, and transport theory of V2VI3 and V2VI3/IV–VI based superlattices and nanomaterials

Effect ofX-ray Irradiation on Structural and Optical Properties of Topological Insulator Bismuth Telluride Nano-Structure Thin Film

From thermoelectric bulk to nanomaterials: Current progress for Bi2Te3 and CoSb3

Contact Info

Product

Resources

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Nanostructure, thermoelectric properties, and transport theory of V₂VI₃ and V₂VI₃/IV–VI based superlattices and nanomaterials

Nanostructure, thermoelectric properties, and transport theory of V₂VI₃ and V₂VI₃/IV–VI based superlattices and nanomaterials

From thermoelectric bulk to nanomaterials: Current progress for Bi₂Te₃ and CoSb₃