Room temperature nanocrystalline silicon single-electron transistors

Tan, Y. T.; Kamiya, Toshio; Durrani, Z. A. K.; Ahmed, H.

doi:10.1063/1.1569994

Cited by 99 publications

(48 citation statements)

References 20 publications

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“…[1][2][3][4] The nanometer-scale size of these crystals leads to novel electronic and optical properties associated with quantum confinement and single-electron charging effects. These properties have been exploited for the fabrication of single-electron transistors and memories, 1,5 electron emitters, 6 and silicon light emitting devices. 7 The possibility of precise control of the nanocrystal size and separation, e.g., by plasma decomposition of SiH 4 , 3,7 raises the possibility of large numbers of nanocrystal devices with well defined electrical and optical characteristics.…”

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confidence: 99%

Charge injection and trapping in silicon nanocrystals

Rafiq

Tsuchiya

Mizuta

et al. 2005

Applied Physics Letters

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The temperature dependence of the conduction mechanism in thin films of ϳ8 nm diameter silicon nanocrystals is investigated using Al/ Si nanocrystal/ p-Si/ Al diodes. A film thickness of 300 nm is used. From 300 to 200 K, space charge limited current, in the presence of an exponential distribution of trapping states, dominates the conduction mechanism. Using this model, a trap density N t = 2.3 ϫ 10 17 cm −3 and a characteristic trap temperature T t = 1670 K can be extracted. The trap density is within an order of magnitude of the nanocrystal number density, suggesting that most nanocrystals trap single or a few carriers at most.

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confidence: 99%

Charge injection and trapping in silicon nanocrystals

Rafiq

Tsuchiya

Mizuta

et al. 2005

Applied Physics Letters

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“…The required size of the island is of the order of the nm, and therefore out of control of current fabrication processes. Researchers took advantage of natural disorder to create such extremely small islands, mostly with constrictions in disordered thin films 10,11,12,13,14 . More recently 15 undulated thin films have been used, as well as pattern-dependent oxidation 16 .…”

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Simple and controlled single electron transistor based on doping modulation in silicon nanowires

Hofheinz

Jehl

Sanquer

et al. 2006

Applied Physics Letters

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A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic SETs. The period of the Coulomb oscillations is set by the gate capacitance of the transistor and therefore controlled by lithography. The source and drain capacitances have also been characterized. This design could be used to build more complex SET devices.The first and most common Coulomb blockade device is the Single Electron Transistor (SET) made with metallic leads and island, and tunnel oxide barriers 1,2 . It is used as sensitive electrometers 3 or electron pumps allowing to control the transfer of electrons one by one 4,5 . Since then very important efforts have been devoted to fabricate silicon SETs, mostly to integrate SETs together with regular transistors for building logic circuits 6,7 , and more recently for quantum logic experiments with single charge or spin in silicon quantum dots 8,9 . An important challenge is to increase the temperature of operation from the typical sub-kelvin range of original devices up to much higher temperatures. The required size of the island is of the order of the nm, and therefore out of control of current fabrication processes. Researchers took advantage of natural disorder to create such extremely small islands, mostly with constrictions in disordered thin films 10,11,12,13,14 . More recently 15 undulated thin films have been used, as well as pattern-dependent oxidation 16 .We followed another approach based on etched silicon nanowires without constrictions, as pionnered by Tilke et al. 17 and more recently Namatsu et al. 18 , and also Kim et al. 19 and Fujiwara et al. 20 . In the two first cases the formation of a Coulomb island in a nanowire underneath a very large gate was studied. In the two others two gates were defined above a nanowire, each of them acting as a tunable barrier for entering/exiting the single electron box delimited by these gates. Although this scheme allowed logic operations to be performed at 300K 15,16 , it remains a complex architecture since up to 4 gates are needed for proper operation. Our SET is much simpler since it requires a single gate to define the quantum dot, while the barriers are fixed, like in metallic SETs. Periodic Coulomb blockade is observed, with a period solely determined by the surface area of a single gate. It is therefore controlled by lithography, not by disorder. With current state of the art electron beam lithography the limit in operating temperature is of the order of 10 K. The schematics of our device is essentially similar to the original metallic SETs, the tunnel oxide barriers being re-

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“…Thus, charging effects can become observable at temperatures that can be achieved by standard cryogenic devices, such as dilution refrigerators. Effort has been put in recent times in reducing this capacitance even further, so that charging effects would be visible at even higher temperatures (preferably at room temperature [20]). This is where novel fabrication methods, based on advances in nanoscience, are essential.…”

Section: Two-junction Devicesmentioning

confidence: 99%

Electronic and Thermal Sequential Transport in Metallic and Superconducting Two-Junction Arrays

Kühn

Paraoanu

2010

Engineering Materials

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The description of transport phenomena in devices consisting of arrays of tunnel junctions, and the experimental confirmation of these predictions is one of the great successes of mesoscopic physics. The aim of this paper is to give a self-consistent review of sequential transport processes in such devices, based on the so-called "orthodox" model. We calculate numerically the current-voltage (I-V ) curves, the conductance versus bias voltage (G-V ) curves, and the associated thermal transport in symmetric and asymmetric two-junction arrays such as Coulomb-blockade thermometers (CBTs), superconducting-insulator-normal-insulator-superconducting (SINIS) structures, and superconducting single-electron transistors (SETs). We investigate the behavior of these systems at the singularity-matching bias points, the dependence of microrefrigeration effects on the charging energy of the island, and the effect of a finite superconducting gap on Coulomb-blockade thermometry.

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Room temperature nanocrystalline silicon single-electron transistors

Cited by 99 publications

References 20 publications

Charge injection and trapping in silicon nanocrystals

Charge injection and trapping in silicon nanocrystals

Simple and controlled single electron transistor based on doping modulation in silicon nanowires

Electronic and Thermal Sequential Transport in Metallic and Superconducting Two-Junction Arrays

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