Room temperature negative differential resistance in clay-graphite paper transistors

Defect-engineered room temperature negative differential resistance in monolayer MoS2 transistors

“…Consequently, the competition between electrons and holes could result in a shifting of the NDR peak position with increasing V g . 14,17,37 To prove that the S-vacancies in defectcontaining MoS 2 could result in defect states that can further affect the device's electron transport, we also performed electrical measurements on devices bombarded with different electron beam dosages and observed the resulting NDR behavior at a dosage of B5 Â 10 5 mC cm À2 , which corresponds to V S E 5% (determined from Fig. S4b, ESI †), as demonstrated in Fig.…”

“…Since the competition between the field-dependent carrier density and the drift velocity determines whether or not the NDR can be observed, we speculate that the defect states at the interface between MoS 2 and the electrodes affect the contact resistance, which could further dominate the tunneling mechanism. 14,39 However, the hugely different current level appearing in the two types of device, namely the KOH-treated MoS 2 and the as-grown MoS 2 , which correspond to mA and pA current levels, respectively, is probably due to either the channel resistance or contact issues. It is obvious that the devices with a shorter channel length of B2 mm have a higher current level, as shown in Fig.…”

“…Since the discovery of the Esaki tunneling diode, 1,2 the negative differential resistance (NDR) effect has been widely applied in designing various devices such as logic switches, 3 computer memory, [4][5][6] and high-frequency oscillators. 7,8 In addition to typical semiconductor-based tunneling diodes, ultra-thin fieldeffect transistors (FETs), fabricated with low dimensional material channels, such as carbon nanotubes, 9,10 graphene [11][12][13] or graphite, 14 have also been reported to exhibit NDR behavior. Likewise, vertically-integrated two-dimensional (2D) layered van der Waals (vdW) heterostructures that involve the recently well-studied 2D transition metal dichalcogenides (TMDs), among others, possess the NDR effect and have been documented in several material arrangements, including MoS 2 -MoTe 2 , 15 MoS 2 -WSe 2 , 16,17 and MoS 2 -WSe 2 -graphene.…”

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

“…[1][2][3] In the process of scaling down to the sub-10 nm scale, however, the short channel effect, which is generated mainly in MOSFET-based integrated circuits (IC), induces a power the concentration of electrons or holes in the channel materials to achieve advanced performance and multifunctional tunneling devices. [43][44][45][46][47][48] For example, Wu et al employed photodoping engineering on the GeSe/SnS 2 FET in 2022 to adjust the conductivity of NDR devices. [49] Under light irradiation conditions, SnS 2 was insensitive to light, while GeSe was doped with a p-type dopant as the light intensity increased.…”

“…External forces, such as an electrical field or light exposure, act as a trigger to control the concentration of electrons or holes in the channel materials to achieve advanced performance and multifunctional tunneling devices. [ 43–48 ] For example, Wu et al. employed photodoping engineering on the GeSe/SnS 2 FET in 2022 to adjust the conductivity of NDR devices.…”