2004
DOI: 10.1063/1.1768306
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Room temperature operation of InAs∕AlSb quantum cascade lasers

Abstract: The room temperature operation of InAs∕AlSb quantum cascade lasers is reported. The structure, grown by molecular beam epitaxy on an InAs substrate, is based on a vertical transition design and a low loss n+-InAs plasmon enhanced waveguide. The lasers emitting near 4.5μm operate in pulse regime up to 300K. The threshold current density of 3.18-mm-long lasers is 1.5kA∕cm2 at 83K and 9kA∕cm2 at 300K.

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Cited by 85 publications
(39 citation statements)
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“…14 Devices with Sb-containing barriers on both InAs substrate [14][15][16] as well as on InP substrate [17][18][19] are promising for either increasing the electron confinement or reducing the emission wavelength, and above room temperature pulsed operation on both substrates was recently reported. 16,18 Since the realization 13 of the GaAs-based quantum cascade laser, an impressive extension of the attainable infrared frequency range has been achieved and can be operated at wavelengths as long as 160 m. 20 The design of QCLs based on GaAs/ AlGaAs can be made very flexible by varying the Al content due to naturally occurring near lattice matched material system across the full range of Al contents. Hence, following the first terahertz QCL, 21 several laser designs based on 15% Al content in the barriers were presented, approaching high temperature pulsed operation 22 ͑137 K͒ and above 23 or close to 24 liquid nitrogen temperature cw operation.…”
Section: Introductionmentioning
confidence: 99%
“…14 Devices with Sb-containing barriers on both InAs substrate [14][15][16] as well as on InP substrate [17][18][19] are promising for either increasing the electron confinement or reducing the emission wavelength, and above room temperature pulsed operation on both substrates was recently reported. 16,18 Since the realization 13 of the GaAs-based quantum cascade laser, an impressive extension of the attainable infrared frequency range has been achieved and can be operated at wavelengths as long as 160 m. 20 The design of QCLs based on GaAs/ AlGaAs can be made very flexible by varying the Al content due to naturally occurring near lattice matched material system across the full range of Al contents. Hence, following the first terahertz QCL, 21 several laser designs based on 15% Al content in the barriers were presented, approaching high temperature pulsed operation 22 ͑137 K͒ and above 23 or close to 24 liquid nitrogen temperature cw operation.…”
Section: Introductionmentioning
confidence: 99%
“…Similar structures reported in literature often employ special shutter sequences at each interface to minimize the cross incorporation of the group V materials and thereby enhance the quality of the interface. [17][18][19] These growth interrupts, however, significantly prolong the growth time, e.g., with respect to the sequence described in Ref. 20 by 50% for this sample.…”
mentioning
confidence: 99%
“…In order to exploit the beneficial properties of InAs as the well material, a suitable barrier material is necessary. The commonly used Al(As)Sb material, though enabling excellent results for mid-infrared (MIR) devices [2][3][4][5], requires the use of monolayer and sub-monolayer thin barriers for devices designed to emit in the terahertz (THz) regime, due to its very high conduction band offset. The growth of such thin layers is very difficult to control, and to date, no THz laser operation has been shown.…”
Section: Introductionmentioning
confidence: 99%