Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

Yatskiv, Roman; Žďánský, K.; Pekárek, L.

doi:10.1016/j.nima.2008.10.001

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“…The axis of pulse-height channels was converted into the energy scale. Description of this conversion was given elsewhere [16]. Comparison of the pulse-height spectrum of 5.48 MeV α-particles measured at RT for particle detectors with p-n junction and detectors based on bulk InP [12], are presented in figure 3.…”

Section: Resultsmentioning

confidence: 99%

Particle detectors based on semiconducting InP epitaxial layers

Yatskiv¹,

Grym²,

Žďánský

2011

J. Inst.

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A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n-and p-type conductivity with carrier concentration on the order of 10 14 cm −3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241 Am source at room temperature.

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Section: Resultsmentioning

confidence: 99%