Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Olea, J.; López, E.; Antolín, E.; Martı́, Antonio; Ĺuque, A.; García-Hemme, E.; Pastor, David; García-Hernansanz, R.; Prado, A. del; González-Dı́az, G.

doi:10.1088/0022-3727/49/5/055103

Cited by 15 publications

(13 citation statements)

References 27 publications

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“…Recently, atom probe tomography investigations on Co-implanted Si after PLA revealed that the phase separation does not lead to detectable silicides, but to a single-phase Si highly supersaturated with at least 10% atomic Co 36 . Moreover, our results do not exclude the fact that the infrared optical absorption reported in Ti implanted Si 18 , 19 likely comes from the region of Si doped with Ti at very low concentrations, which is far below the cellular breakdown threshold. Our qualitative analysis of the absorption properties by Fourier transform infrared spectroscopy (not shown) demonstrates a near- and mid- infrared optical absorption for both PLA and FLA samples.…”

Section: Discussioncontrasting

confidence: 75%

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On the insulator-to-metal transition in titanium-implanted silicon

Liu

Wang

Berencén

et al. 2018

Sci Rep

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Hyperdoped silicon with deep level impurities has attracted much research interest due to its promising optical and electrical properties. In this work, single crystalline silicon supersaturated with titanium is fabricated by ion implantation followed by both pulsed laser melting and flash lamp annealing. The decrease of sheet resistance with increasing Ti concentration is attributed to a surface morphology effect due to the formation of cellular breakdown at the surface and the percolation conduction at high Ti concentration is responsible for the metallic-like conductivity. The insulator-to-metal transition does not happen. However, the doping effect of Ti incorporation at low concentration is not excluded, which might be responsible for the sub-bandgap optical absorption reported in literature.

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Section: Discussioncontrasting

confidence: 75%

“…Nevertheless, Olea et al . observed a strong sub-bandgap absorption in Ti-implanted Si samples, suggesting the potential for optoelectronic applications 18 , 19 . Regarding the electrical properties of Ti-hyperdoped Si, it is believed that Ti behaves as a deep donor 20 .…”

Section: Introductionmentioning

confidence: 97%

On the insulator-to-metal transition in titanium-implanted silicon

Liu

Wang

Berencén

et al. 2018

Sci Rep

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“…Therefore, the development of a room-temperature broadband infrared Si-based photodetector is of great interest in the realm of all-Si photonic systems.One of the most promising approaches to further extend the room-temperature optical response of Si to the short-and mid-wavelength infrared (SWIR, MWIR) range consists of introducing deep-level dopants (e.g., transition metals and chalcogen dopants) into Si at concentrations in excess of the solid solubility limit. [15][16][17][18][19][20][21][22][23][24][25] This process leads to the broadening of the deep-level states into an intermediate band (IB) with finite width that allows for the strong optical absorption of photons with an energy lower than that of the Si bandgap. [26] Moreover, utilizing deep-level impurities provides a path to obtain extrinsic Si-based photodetectors for room-temperature operation, which is not possible with shallow-level impurities.…”

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confidence: 99%

Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping

Wang

García-Hemme

Berencén

et al. 2020

Advanced Optical Materials

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Si‐based photodetectors satisfy the criteria of being low‐cost and environmentally friendly, and can enable the development of on‐chip complementary metal‐oxide‐semiconductor (CMOS)‐compatible photonic systems. However, extending their room‐temperature photoresponse into the mid‐wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive study of a room‐temperature MWIR photodetector based on Si hyperdoped with Te. The demonstrated MWIR p‐n photodiode exhibits a spectral photoresponse up to 5 µm and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0–1.9 µm. The correlation between the background noise and the sensitivity of the Te‐hyperdoped Si photodiode, where the maximum room‐temperature specific detectivity is found to be 3.2 × 1012 cmHz1/2 W−1 and 9.2 × 108 cmHz1/2 W−1 at 1 µm and 1.55 µm, respectively, is also investigated. This work contributes to pave the way towards establishing a Si‐based broadband infrared photonic system operating at room temperature.

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“…Measurements were performed at low temperature (100 K), in order to increase the signal-to-noise ratio. For a more detailed explanation, see room temperature measurements for similar samples previously published [27,39]. The silicon unimplanted substrate presents two different behaviours: a slight sub-bandgap photoresponse for photon energies in the 0.7 eV-1 eV range, as well as an abrupt increase of the photoresponse for energies higher than 1.1 eV The slight sub-bandgap photoresponse would be related to the silicon surface states that create levels in the silicon band gap.…”

Section: Resultsmentioning

confidence: 94%

Vanadium supersaturated silicon system: a theoretical and experimental approach

García-Hemme¹,

García²,

Palacios³

et al. 2017

J. Phys. D: Appl. Phys.

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The effect of high dose vanadium ion implantation and pulsed laser annealing on the crystal structure and sub-bandgap optical absorption features of V-supersaturated silicon samples has been studied through the combination of experimental and theoretical approaches. Interest in V-supersaturated Si focusses on its potential as a material having a new band within the Si bandgap. Rutherford backscattering spectrometry measurements and formation energies computed through quantum calculations provide evidence that V atoms are mainly located at interstitial positions. The response of sub-bandgap spectral photoconductance is extended far into the infrared region of the spectrum. Theoretical simulations (based on density functional theory and many-body perturbation in GW approximation) bring to light that, in addition to V atoms at interstitial positions, Si defects should also be taken into account in explaining the experimental profile of the spectral photoconductance. The combination of experimental and theoretical methods provides evidence that the improved spectral photoconductance up to 6.2 /jm (0.2 eV) is due to new sub-bandgap transitions, for which the new band due to V atoms within the Si bandgap plays an essential role. This enables the use of V-supersaturated silicon in the third generation of photovoltaic devices.

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Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Cited by 15 publications

References 27 publications

On the insulator-to-metal transition in titanium-implanted silicon

On the insulator-to-metal transition in titanium-implanted silicon

Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping

Vanadium supersaturated silicon system: a theoretical and experimental approach

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