Room temperature plasma oxidation mechanism to obtain ultrathin silicon oxide and titanium oxide layers

Tinoco, J. C.; Estrada, M.; Romero, G.

doi:10.1016/s0026-2714(03)00098-2

Cited by 42 publications

(20 citation statements)

References 22 publications

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“…The current densities levels are the expected for direct tunneling [4]. This result is consistent with reported in [1,2] where it was determined that the current density in these capacitors follows a dependence with voltage corresponding to the direct tunneling mechanism at 300 K.…”

Section: Resultssupporting

confidence: 90%

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Electrical characterization of MOS capacitors with SiO/sub 2/-TiO/sub 2/ dielectric stack made by room temperature plasma oxidation

Baez

Estrada

Tinoco

Proceedings of the Fifth IEEE International Caracas Conference on Devices, Circuits and Systems, 2004.

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In this paper, we present current-voltage characterization as function of temperature (IVT), of MOS capacitors with dielectric layers of SiO 2 , TiO 2 and with SiO 2 -TiO 2 dielectric stack, made by room temperature plasma oxidation. It is shown that in structures where only TiO 2 was grown, the main conduction mechanism is thermoionic emission. However, in this case, an interfacial layer was inevitably formed. This layer is probably a bad quality SiO 2 , with k<3.9 and thicker than expected, which reduces the value of the effective dynamic dielectric constant. The barrier height was around 0.8 eV. For the stack dielectric structure, a similar barrier height was found, but in addition, a good agreement was obtained for the value of equivalent dynamic dielectric constant obtained from measurements with the calculated one, considering the measured thickness and the estimated dielectric constants of the two stacked layers. It was also verified that the Poole-Frenkel conduction mechanism is not present in any of the samples. For values of equivalent thickness below 2 nm, the barrier height obtained for stacked layers provides more than 2 order of gate current density smaller than the observed for SiO 2 layers only with similar thickness.

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Section: Resultssupporting

confidence: 90%

“…Recently we reported first results of a new method, the Room Temperature Plasma Oxidation (RTPO), to obtain SiO 2 and TiO 2 ultrathin layers were presented in [2], and their electrical characterization in [3]. It was determined that direct tunneling was the conduction mechanism present in SiO 2 capacitors.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of MOS capacitors with SiO/sub 2/-TiO/sub 2/ dielectric stack made by room temperature plasma oxidation

Baez

Estrada

Tinoco

Proceedings of the Fifth IEEE International Caracas Conference on Devices, Circuits and Systems, 2004.

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“…In the present work, we chose TiO 2 as the tunnel dielectric, and optimized its growth conditions on p-type silicon (Si) as the first step towards making a VMISTT operable at room temperatures. TiO 2 has been grown by a number of techniques, like metal organic chemical vapour deposition (MOCVD) [16], sputtering [17], anodic oxidation [9], plasma oxidation of metallic Ti films [18]. As exact control of the barrier height is of paramount importance to control the tunneling current only the latter method of plasma oxidation or thermal oxidation of the metallic constituent are expected to give the required wetting and minimal surface roughness to make reproducible tunnel devices [19].…”

Section: Theory Device Design and Simulation Of Vmisttmentioning

confidence: 99%

The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler–Nordheim tunneling device

Chong

Mallik

Groot

2005

Microelectronic Engineering

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We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode. The VMISTT has significant advantages over the metal-oxide-semiconductor field-effect transistor in device scaling. In order to allow room-temperature operation of the VMISTT, the tunnel oxide has to be optimized for the metal-to-insulator barrier height and the current-voltage characteristics. We have grown TiO 2 layers as the tunnel insulator by oxidizing 7 and 10 nm thick Ti metal films vacuum-evaporated on silicon substrates, and characterized the films by current-voltage and capacitance-voltage techniques. The quality of the oxide films showed variations, depending on the oxidation temperatures in the range of 450-550°C. Fowler-Nordheim tunneling was observed at low temperatures at bias voltage of 2 V and above and a barrier height of approximately 0.4 eV was calculated. Leakage currents present were due Schottky-barrier emission at room-temperature, and hopping at liquid nitrogen temperature.

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“…TiO 2 thin films have been synthesized by using numerous methods including plasma oxidation [20], chemical vapor deposition (CVD) [21], metal organic chemical vapor deposition (MOCVD) [22], sputtering [23], atomic layer deposition (ALD) [24], plasmaenhanced ALD (PEALD) [25] and pulsed laser deposition (PLD) [26]. Among the above mentioned techniques, PLD provides thin films with good mechanical rigidity and with high specific surface area [27,28].…”

Section: Introductionmentioning

confidence: 99%

Ion beam induced chemical and morphological changes in TiO2 films deposited on Si(111) surface by pulsed laser deposition

Mohanta¹,

Medicherla

Mohanta

et al. 2015

Applied Surface Science

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Room temperature plasma oxidation mechanism to obtain ultrathin silicon oxide and titanium oxide layers

Cited by 42 publications

References 22 publications

Electrical characterization of MOS capacitors with SiO/sub 2/-TiO/sub 2/ dielectric stack made by room temperature plasma oxidation

Electrical characterization of MOS capacitors with SiO/sub 2/-TiO/sub 2/ dielectric stack made by room temperature plasma oxidation

The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler–Nordheim tunneling device

Ion beam induced chemical and morphological changes in TiO2 films deposited on Si(111) surface by pulsed laser deposition

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