Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects

Chen, Shula; Huang, Yuqing; Visser, Dennis; Anand, Srinivasan; Buyanova, Irina; Chen, Weimin

doi:10.1038/s41467-018-06035-1

Cited by 17 publications

(20 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Недавно появилось сообщение об исследовании спинзависимой рекомбинации при комнатной температуре в периодической структуре, образованной нанодисками GaAsN, встроенными в одномерные наноколонны из GaAs [21]. Установлено, что в каждом диске располагается 2−3 дефекта, ответственных за рекомбинацию.…”

Section: заключениеunclassified

Сверхтонкое Взаимодействие И Рекомбинация Шокли--Рида--Холла В Полупроводниках

Ивченко¹,

Калевич²,

Kunold

et al. 2019

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Experimental and theoretical studies on optical orientation and spin-dependent recombination in a semiconductor in a magnetic field under the normal incidence of circularly polarized radiation onto the sample surface are reviewed. The experiments were carried out on GaAs_1 –_ x N_ x solid solutions, in which Ga^2+ interstitial displacement defects play the role of deep paramagnetic centers responsible for spin-dependent recombination. It is established that, in the investigated materials, the hyperfine interaction of a localized electron with one nucleus of the paramagnetic center remains strong even at room temperature. The theory is compared with an experiment conducted in the steady-state excitation mode and under two-pulse pump-probe conditions. An analytical formula for spin beats in a magnetic field is derived.

show abstract

Section: заключениеunclassified

Сверхтонкое Взаимодействие И Рекомбинация Шокли--Рида--Холла В Полупроводниках

Ивченко¹,

Калевич²,

Kunold

et al. 2019

Физика И Техника Полупроводников

View full text Add to dashboard Cite

show abstract

“…We have previously shown that the formation of selfassembled QDs is very efficient in novel GaNAs NWs, adding to numerous attractive properties of dilute nitride alloys [24][25][26][27][28]. The formation of these QDs is caused by clustering of N atoms, which leads to strong electron confinement facilitated by the giant bowing in the band-gap energy in dilute nitrides [22,29].…”

Section: Introductionmentioning

confidence: 99%

Formation, electronic structure, and optical properties of self-assembled quantum-dot single-photon emitters in Ga(N,As,P) nanowires

Jansson

Francaviglia

et al. 2020

Phys. Rev. Materials

Self Cite

View full text Add to dashboard Cite

Quantum dots (QDs) formed in semiconductor nanowires (NWs) form a basis for studying interesting quantum phenomena and provide an exciting platform for various device applications, where in-depth understanding of the formation and electronic properties of such QDs is a requirement. In this work we present detailed investigations of structural, electronic, and optical properties of nitrogen-induced self-assembled QDs in novel Ga(N,As,P) NWs. We show that the three-dimensional quantum confinement of the excitons caused by shortrange fluctuations in the N content leads to single-photon emission. We demonstrate that valence band character varies between the QD emitters and attribute it to a varying degree of hole localization within the QDs induced by fluctuations in the As/P ratio. These fluctuations in the chemical compositions are also believed to be at least partly responsible for the observed large variation in exciton lifetimes of the QDs, ranging between 0.5 and 10 ns. The rather long lifetimes demonstrate the resilience of the QDs to nonradiative recombination-a merit for efficient single-photon emitters. Furthermore, we show that the principal axes of the formed QDs are oriented radially, normal to the NW side facets, in contrast to the N-induced QDs in GaNAs NWs which are primarily aligned along the NW axis. Our results, therefore, underline the impacts of the host alloy on the QD formation, which could provide an additional degree of freedom for band structure engineering in nanowires.

show abstract

“…One-dimensional periodic nanostructures (nanogratings) are one of the most fundamental devices and have been widely applied in electronic, optical, magnetic, and biological applications 11–17 . One notable application is the diffraction grating in spectrometer, where the grating period determines the angular dispersion and resolution of the system.…”

Section: Introductionmentioning

confidence: 99%

Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy

et al. 2019

View full text Add to dashboard Cite

Gratings, one of the most important energy dispersive devices, are the fundamental building blocks for the majority of optical and optoelectronic systems. The grating period is the key parameter that limits the dispersion and resolution of the system. With the rapid development of large X-ray science facilities, gratings with periodicities below 50 nm are in urgent need for the development of ultrahigh-resolution X-ray spectroscopy. However, the wafer-scale fabrication of nanogratings through conventional patterning methods is difficult. Herein, we report a maskless and high-throughput method to generate wafer-scale, multilayer gratings with period in the sub-50 nm range. They are fabricated by a vacancy epitaxy process and coated with X-ray multilayers, which demonstrate extremely large angular dispersion at approximately 90 eV and 270 eV. The developed new method has great potential to produce ultrahigh line density multilayer gratings that can pave the way to cutting edge high-resolution spectroscopy and other X-ray applications.

show abstract

Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects

Cited by 17 publications

References 59 publications

Сверхтонкое Взаимодействие И Рекомбинация Шокли--Рида--Холла В Полупроводниках

Сверхтонкое Взаимодействие И Рекомбинация Шокли--Рида--Холла В Полупроводниках

Formation, electronic structure, and optical properties of self-assembled quantum-dot single-photon emitters in Ga(N,As,P) nanowires

Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy

Contact Info

Product

Resources

About