Room-Temperature Quantum Emitter in Aluminum Nitride

Bishop, S. G.; Hadden, J. P.; Alzahrani, Faris D; Hekmati, Reza; Huffaker, Diana L.; Langbein, Wolfgang Werner; Bennett, A. J.

doi:10.1021/acsphotonics.0c00528

Cited by 60 publications

(53 citation statements)

References 31 publications

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“…[20] In 2018, Zhou et al had reported near-infrared emitters based on GaN with high photon purity. [21] In 2020, Xue et al and Bishop et al had reported room-temperature single-photon emission in AlN, [22,23] the antisite-nitrogen-vacancy (N Al V N ) and divacancy (V Al V N ) were predicted to be possible sources of the single-photon signal. [22] As the III-nitrides belong to ionic semiconductor, the dangling bond energy level lies in the lower part of the bandgap for cation vacancy (V cation ), while it lies in the upper part of the bandgap for anion vacancy (V anion ).…”

Section: Introductionmentioning

confidence: 99%

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

et al. 2021

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Single-photon sources based on solid-state material are desirable in quantum technologies. However, suitable platforms for single-photon emission are currently limited. Herein, a theoretical approach to design a single-photon emitter based on defects in solid-state material is proposed. Through group theory analysis and hybrid density functional theory calculation, the charge-neutral cation vacancy in III-V compounds is found to satisfy a unique 5-electron-8-orbital electronic configuration with T d symmetry, which is possible for single-photon emission. Furthermore, it is confirmed that this type of single-photon emitter only exists in wide bandgap III-nitrides among all the III-V compounds. The corresponding photon energy in GaN, AlN, and AlGaN lies within the optimal range for transfer in optical fiber, thereby render the charge-neutral cation vacancy in wide-bandgap III-nitrides as a promising single-photon emitter for quantum information applications.

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Section: Introductionmentioning

confidence: 99%

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

et al. 2021

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“…The wide‐field method can be directly implemented as long as the spatial PL or electroluminescence (EL) maps of quantum emitters can be well‐observed. To date, such EL and PL maps required for this positioning technique have been achieved with the colloidal QDs ( Figure a), [ 85 ] defect states in hexagonal boron nitride monolayers (Figure 7b) [ 86 ] and 2D tungsten‐diselenide (WSe2) monolayers (Figure 7c), [ 87 ] color centers in diamond (Figure 7d), [ 88 ] AlN (Figure 7e), [ 89 ] SiC (Figure 7f), [ 90,91 ] and cesium lead halide perovskite nanocrystals (Figure 7g) [ 92 ] at room temperature for the deterministic coupling to both plasmonic [ 93,94 ] and dielectric [ 95–98 ] photonic nanostructures. Together with techniques to locally and independently tune the emission wavelength of individual quantum emitters, as has been done for QDs using piezoelectric actuators, [ 99,100 ] it is likely feasible to pursue large‐scale deterministically‐coupled devices, [ 101 ] for example, strongly coupled systems in the future.…”

Section: Discussionmentioning

confidence: 99%

Nanoscale Positioning Approaches for Integrating Single Solid‐State Quantum Emitters with Photonic Nanostructures

Liu

Srinivasan

Liu

2021

Laser & Photonics Reviews

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Deterministically integrating single solid‐state quantum emitters with photonic nanostructures serves as a key enabling resource in the context of photonic quantum technology. Due to the random spatial location of many widely‐used solid‐state quantum emitters, a number of positioning approaches for locating the quantum emitters before nanofabrication have been explored in the last decade. Here, the working principles of several nanoscale positioning methods and the most recent progress in this field, covering techniques including atomic force microscopy, scanning electron microscopy, confocal microscopy with in situ lithography, and wide‐field fluorescence imaging are reviewed. A selection of representative device demonstrations with high‐performance is presented, including high‐quality single‐photon sources, bright entangled‐photon pairs, strongly‐coupled cavity QED systems, and other emerging applications. The challenges in applying positioning techniques to different material systems and opportunities for using these approaches for realizing large‐scale quantum photonic devices are discussed.

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“…Equation ( 3) makes clear what affects the brightness of electrically driven single-photon sources based on color centers in semiconductors. The lifetime of most color centers is only of the order of a few nanoseconds, [27,29,[103][104][105] while the electron and hole capture processes are orders of magnitude slower. As discussed above, the hole density in diamond is of the order of 10 14 cm −3 , and the electron density is even lower.…”

Section: Single-photon Electroluminescence Ratementioning

confidence: 99%

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

Fedyanin

2021

Adv Quantum Tech

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Color centers in diamond, silicon carbide, and related materials have recently emerged as one of the most promising platforms for quantum technology applications. These optically active point defects in the crystal lattice demonstrate outstanding optical and spin properties at room and even higher temperatures, which can hardly be achieved using other quantum systems. For a long time, the host material was considered only as a mechanical carrier of color centers, and the fact that it is a semiconductor and, therefore, can contain high densities of electrons and holes, was ignored. However, recent studies have demonstrated that color centers can exchange electrons and holes with the valence or conduction bands of the host material, which enables novel functionalities, ranging from ultrabright electrically driven single-photon sources to protected quantum memories. This review summarizes recent advances in understanding this interaction.

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Room-Temperature Quantum Emitter in Aluminum Nitride

Cited by 60 publications

References 31 publications

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

Nanoscale Positioning Approaches for Integrating Single Solid‐State Quantum Emitters with Photonic Nanostructures

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

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