Room-temperature solution-processed high-k gate dielectrics for large area electronics applications

Lin, Wan‐Yu; Müller, Robert N.; Myny, Kris; Steudel, Sören; Genoe, Jan; Heremans, Paul

doi:10.1016/j.orgel.2011.03.014

Cited by 15 publications

(17 citation statements)

References 20 publications

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“…The pentacene OFET based on UV-cured BST reached a saturated state at −2.5 V gate bias, and the corresponding unit-area capacitance was 300 nF cm −2 . [84] Both p-type and n-type FETs turned on at 2 V gate bias, and the leakage current density was lower than 10 −8 A cm −2 in a 2 MV cm −2 electrical field. [102] Other approaches, such as reactive chemical reactions, [103] combustion fuels, [104] and dopant addition, [105] are also reported.…”

Section: Wwwadvancedsciencenewscommentioning

confidence: 99%

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

112

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The operating frequency of ring oscillators or radio-frequency identification tags made by OFETs have surpassed MHz. [27,28] With the growing level of integration and the operating frequency of OFETs, the power dissipation issue can no longer be ignored. Considering the material composition of most organic semiconductors, controlling the temperature rise within a reasonable range is important to avoid the unwanted degradation of organic materials and therefore maintain stable device operation. In addition, OFETs fabricated on flexi ble substrates somehow limit the use of conventional batteries. To avoid externally wiring the batteries, flexible OFET-based circuits can be expected to be self-powered by integrating them with organic solar cells, thermoelectric modules, or triboelectric nanogenerators. [29,30] All of these demands require OFETs operating with extremely low power consumption. Rapid progress has been made in this field, and research efforts have focused on reducing the operating voltage of OFETs, [31][32][33] enhancing the switching efficiency of transistors, [34][35][36][37] and demonstrating several novel device concepts for low-power applications. [38][39][40][41][42] Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices dueThe organic field-effect transistor (OFET) is the basic building block of integrated circuits. The charge carrier mobility and operating frequency of OFETs have continued to increase; therefore, the power dissipation of OFETs can no longer be ignored. Many research efforts have been made to develop low-power-consumption OFETs and complementary circuits. Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices. Organic phototransistors show considerably higher photo responsivity than other photodetector architectures due to field-effect charge modulation. The photoinduced gate modulating largely suppresses the dark current while simultaneously providing gain. These characteristics may favor NIR light detection and suggest that the organic phototransistor is a promising candidate for optoelectronic applications in the NIR regime. For organic thermoelectric applications, OFETs can work as a powerful tool for examining the charge and energy transport in the organic semiconductor, thus giving insight into organic thermoelectric studies. In this review, the authors highlight recent advances in OFET-related energy topics, including lowpower-consumption OFETs, NIR photodetectors, and organic thermoelectric devices. The remaining challenges in the field will also be discussed.

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Section: Wwwadvancedsciencenewscommentioning

confidence: 99%

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

112

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“…The local electric field and charge distribution in the new capacitors (fig. S2) are simulated using the finite element method [the dielectric constant value of Al 2 O 3 is around 9 ( 22 )], and the calculated capacitance for a 1-μm-thick membrane can reach up to 9.8 μF/cm 2 , being similar to that of the MIM capacitors ( 3 ).…”

Section: Resultsmentioning

confidence: 99%

“…It is widely used as a template to synthesize nanowire ( 18 , 19 ), nanotube ( 20 ), and nanocable ( 21 ) arrays. The fascinating features of nanoporous AAO, including a uniform pore wall thickness, hemispheric barrier layers at the pore bottom, and a high dielectric constant ( 22 ), can be applied in dielectric capacitors to enhance the performance. Furthermore, in comparison with deposited aluminum oxides such as by ALD, AAO could be a good option especially for MIM structures to achieve the expected lower current leakage and higher breakdown voltage ( 23 ).…”

Section: Introductionmentioning

confidence: 99%

Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage

et al. 2015

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“…Figure 3b, d shows a three-dimensional view for a better spatial comprehension. The Al 2 O 3 films grown by anodization has a quite irregular surface, that depend on the fabrication parameters [21]. The roughness is reduced by covering the Al 2 O 3 film with a PMMA thin layer, as can be seen in Fig.…”

Section: Analysis Of Sn Layer Evaporationmentioning

confidence: 99%

Middle Electrode in a Vertical Transistor Structure Using an Sn Layer by Thermal Evaporation

Nogueira

Ozório

Silva

et al. 2018

Electron. Mater. Lett.

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We report a process for performing the middle electrode for a vertical field effect transistor (VOFET) by the evaporation of a tin (Sn) layer. Bare aluminum oxide (Al 2 O 3), obtained by anodization, and Al 2 O 3 covered with a polymethylmethacrylate (PMMA) layer were used as the gate dielectric. We measured the electrical resistance of Sn while the evaporation was carried out to find the best condition to prepare the middle electrode, that is, good lateral conduction associated with openings that give permeability to the electric field in a vertical direction. This process showed that 55 nm Sn thick is suitable for use in a VOFET, being easier to achieve optimal thickness when the Sn is evaporated onto PMMA than onto bare Al 2 O 3. The addition of a PMMA layer on the Al 2 O 3 surface modifies the morphology of the Sn layer, resulting in a lowering of the threshold voltage. The values of threshold voltage and electric field, V TH = − 8 V and E TH = 354.5 MV/m respectively, were calculated using an Al 2 O 3 film 20 nm thick covered with a 14 nm PMMA layer as gate dielectric, while for bare Al 2 O 3 these values were V TH = − 10 V and E TH = 500 MV/m.

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Room-temperature solution-processed high-k gate dielectrics for large area electronics applications

Cited by 15 publications

References 20 publications

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage

Middle Electrode in a Vertical Transistor Structure Using an Sn Layer by Thermal Evaporation

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