Room temperature spin relaxation length in spin light-emitting diodes

Soldat, H.; Li, Mingyuan; Gerhardt, Nils C.; Hofmann, Martin R.; Ludwig, Arne; Ebbing, Astrid; Reuter, D.; Wieck, A. D.; Stromberg, F.; Keune, W.; Wende, Heiko

doi:10.1063/1.3622662

Cited by 28 publications

(20 citation statements)

References 18 publications

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“…A challenge is to overcome a relatively large separation between a ferromagnetic spin injector and an active region (> µm) implying that at 300 K recombining carriers would have only a negligible spin polarization. 79 However, room temperature electrical injection of spinpolarized carriers has already been realized through spinfiltering by integrating nanomagnets with the active region of a VCSEL. 17 Additional efforts focus on vertical external cavity surface emitting lasers (VECSELs), 14,15 which could enable depositing a thin-film ferromagnet just 100-200 nm away from the active region, sufficiently close to attain a considerable spin polarization of carriers in the active region at room temperature.…”

Section: Discussionmentioning

confidence: 99%

Toward high-frequency operation of spin lasers

Faria

Lee

et al. 2015

Phys. Rev. B

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Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microscopic model of spin-dependent optical gain derived from an accurate electronic structure in a quantum well-based laser, we study how its operation properties can be modified by spin-polarized carriers, carrier density, and resonant cavity design. We reveal that by applying an uniaxial strain it is possible to attain a large birefringence. While such birefringence is viewed as detrimental in conventional lasers, it could enable fast polarization oscillations of the emitted light in spin-lasers which can be exploited for optical communication and high-performance interconnects. The resulting oscillation frequency (> 200 GHz) would significantly exceed the frequency range possible in conventional lasers.

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Section: Discussionmentioning

confidence: 99%

Toward high-frequency operation of spin lasers

Faria

Lee

et al. 2015

Phys. Rev. B

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“…The degree of optical circular polarization achieved at RT was 1.5% at remanence and 4.4% at μ o H = 2 T [129]. Recently, the concept of using Fe/Tb-multilayer contacts with strong PMA at RT was applied to a new type of GaAs(001)-based LED containing light-emitting InAs quantum dots [130,131]. Combined measurements at RT of the canting angle < θ > at the Fe/GaAs-LED interface by 57 Fe-probe layer CEMS and of the degree of circular polarization of the EL light in remanence allowed to determine the spin relaxation depth of the injected electrons in the semiconductor [131].…”

Section: Ferromagnet/semiconductor Heterostructures: Fe On Gaas(001)mentioning

confidence: 98%

“…Recently, the concept of using Fe/Tb-multilayer contacts with strong PMA at RT was applied to a new type of GaAs(001)-based LED containing light-emitting InAs quantum dots [130,131]. Combined measurements at RT of the canting angle < θ > at the Fe/GaAs-LED interface by 57 Fe-probe layer CEMS and of the degree of circular polarization of the EL light in remanence allowed to determine the spin relaxation depth of the injected electrons in the semiconductor [131]. Moreover, the successful fabrication and CEMS characterization of ferromagnetic Fe/Tb multilayer contacts with PMA was also reported for the semiconductor InAs(001) [132].…”

Section: Ferromagnet/semiconductor Heterostructures: Fe On Gaas(001)mentioning

confidence: 99%

Application of Mössbauer spectroscopy in magnetism

Keune

2012

Hyperfine Interact

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An overview is provided on our recent work that applies 57 Fe Mössbauer spectroscopy to specific problems in nanomagnetism. 57 Fe conversion electron Möss-bauer spectroscopy (CEMS) in conjunction with the 57 Fe probe layer technique as well as 57 Fe nuclear resonant scattering (NRS) were employed for the study of various nanoscale layered systems: (i) metastable fct-Fe; a strongly enhanced hyperfine magnetic field B hf of ∼39 T at 25 K was observed in ultrahigh vacuum (UHV) on uncoated three-monolayers thick epitaxial face-centered tetragonal (fct) 57 Fe(110) ultrathin films grown by molecular-beam epitaxy (MBE) on vicinal Pd(110) substrates; this indicates the presence of enhanced Fe local moments, μ Fe , as predicted theoretically; (ii) Fe spin structure; by applying magnetic fields, the Fe spin structure during magnetization reversal in layered (Sm-Co)/Fe exchange spring magnets and in exchange-biased Fe/MnF 2 bilayers was proven to be non-collinear and depth-dependent; (iii) ferromagnet/semiconductor interfaces for electrical spin injection; CEMS was used as a diagnostic tool for the investigation of magnetism at the buried interface of Fe electrical contacts on the clean surface of GaAs(001) and GaAs(001)-based spin light-emitting diodes (spin LED) with in-plane or out-ofplane Fe spin orientation; the measured rather large average hyperfine field of ∼27 T at 295 K and the distribution of hyperfine magnetic fields, P(B hf ), provide evidence for the absence of magnetically "dead" layers and the existence of relatively large Fe moments (μ Fe ∼ 1.8 μ B ) at the ferromagnet/semiconductor interface. -Finally, a short outlook is given for potential applications of Mössbauer spectroscopy on topical subjects of nanomagnetism/spintronics.

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“…45 The 0 main difference from commercially available VCSELs is the presence of spin-polarized carriers, provided by pumping with circularly polarized light or using magnetic contacts for electrical spin injection. [10][11][12]40,41,[60][61][62][63][64][65] In spin lasers we consider spin-resolved quantities to model different spin projections or helicities of light. The total electron or hole density can be written as the sum of the spin-up (+) and the spin-down (−) electron or hole densities, n = n + + n − and p = p + + p − .…”

Section: Mapping Of Spin Lasersmentioning

confidence: 99%

Mapping between quantum dot and quantum well lasers: From conventional to spin lasers

et al. 2012

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We explore similarities between the quantum wells and quantum dots used as optical gain media in semiconductor lasers. We formulate a mapping procedure which allows a simpler, often analytical, description of quantum well lasers to study more complex lasers based on quantum dots. The key observation in relating the two classes of laser is that the influence of a finite capture time on the operation of quantum dot lasers can be approximated well by a suitable choice of the gain compression factor in quantum well lasers. Our findings are applied to the rate equations for both conventional (spin-unpolarized) and spin lasers in which spin-polarized carriers are injected optically or electrically. We distinguish two types of mapping that pertain to the steady-state and dynamical operation respectively and elucidate their limitations.

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Room temperature spin relaxation length in spin light-emitting diodes

Abstract: Articles you may be interested inEfficient electron spin injection in MnAs-based spin-light-emitting-diodes up to room temperature Appl. Phys. Lett. 97, 041103 (2010); 10.1063/1.3464966 Carrier lifetime and spin relaxation time study for electrical spin injection into GaAs

Cited by 28 publications

References 18 publications

Toward high-frequency operation of spin lasers

Toward high-frequency operation of spin lasers

Application of Mössbauer spectroscopy in magnetism

Mapping between quantum dot and quantum well lasers: From conventional to spin lasers

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