Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction

Iqbal, Muhammad Zahir; Siddique, Salma; Hussain, Ghulam; Iqbal, Muhammad Waqas

doi:10.1039/c6tc03425j

Cited by 38 publications

(89 citation statements)

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“…The I 2D /I G ratio is calculated to be %4.5, showing monolayer of graphene. [36][37][38][39][40][41][42][43][44][45] The basic purpose of this is to take the advantage of electron spin for device applications. [32,33] Lastly, we performed Raman spectroscopy for Gr-hBN heterostructure, as shown in Figure 2c.…”

Section: Resultsmentioning

confidence: 99%

“…[34,35] Recently, an impressive effort has been made to connect FM metals to the very tiny non-ferromagnetic 2D crystals. [36][37][38][39][40][41][42][43][44][45] The basic purpose of this is to take the advantage of electron spin for device applications. In a vertical spin valve structure, two FM leads are separated with non-magnetic interlayer.…”

Section: Resultsmentioning

confidence: 99%

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Spin Valve Effect of 2D‐Materials Based Magnetic Junctions

Iqbal

Siddique

Hussain³

2017

Adv Eng Mater

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The magnetotransport properties of spin valve structure are highly influenced by the type of intervening layer inserted between the ferromagnetic electrodes. In this scenario, spin filtering effect at the interfaces plays a crucial role in determining the magnetoresistance (MR) of such magnetic structures, which can be enhanced by using a suitable intervening layer. Here, the authors investigate the spin filtering effect of the two-dimensional layers such as hexagonal boron nitride (hBN), graphene (Gr), and Gr-hBN hybrid system for modifying the magnetotransport characteristics of the vertical spin valve architectures (Ni/hBN/Ni, Ni/Gr/Ni, and Ni/Gr-hBN/Ni). Compared to graphene, hBN incorporated magnetic junction reveals higher MR and spin polarizations (P) suggesting better spin filtering at the interfaces. The MR for hBN incorporated junction is calculated to be %0.83%, while that of graphene junction it is estimated to be %0.16%. Similar contrast is observed in the 'P' of ferromagnets (FMs) for the two junctions, that is, %6.4% for hBN based magnetic junction and %2.8% for graphene device. However, for Gr-hBN device, the signal not only get inverts, but it also suggests efficient spin filtering mechanism at the FM interfaces. Their results can be useful to comprehend the origin of spin filtering and the choice of non-magnetic spacer for magnetotransport characteristics.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Spin Valve Effect of 2D‐Materials Based Magnetic Junctions

Iqbal

Siddique

Hussain³

2017

Adv Eng Mater

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“…In 2013, a study by Meng et al and Cheng et al, detailed in two papers [21,22], presented the data for Co/graphene/Co vertical structures with a similar conclusion: MTJs based on monolayer CVD graphene showed an MR of 0.7%, whilst those based on bilayer graphene showed an MR of up to 1%. After 2014, these different works were further developed in follow-up papers, where the graphene layer is still transferred by wet chemistry, but with slight changes to the device structure in order to extract complementary information [23,32,41]. In particular, in 2015, by introducing a tunnelling interface to decouple the graphene from the top ferromagnetic electrode (as per Dlubak et al [16], see section 4), Iqbal et al [32] were able to better characterize the spin polarizations of the graphene-covered FM in these systems.…”

Section: Working With Exfoliated and Transferred Graphenementioning

confidence: 99%

2D-MTJs: introducing 2D materials in magnetic tunnel junctions

Piquemal-Banci

Galceran

Martin

et al. 2017

J. Phys. D: Appl. Phys.

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“…Both materials have their own superiority, and in order to combine the superiority of two different materials, it is necessary to explore the application of vdW heterojunction in MTJs and a number of devices have shown promising properties . Motivated by the idea, Iqbal and coworkers soon reported a spin valve based on graphene/h‐BN (GBN) heterostructure . The schematic of the device and the measurements are shown in Figure a,b.…”

Section: D Materials For Nonvolatile Memory Applicationsmentioning

confidence: 99%

Section: D Materials For Nonvolatile Memory Applicationsmentioning

confidence: 99%

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

Hou

Chen

Zhang

et al. 2019

Adv Elect Materials

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With the rapid development of the information age, more and more new technologies such as big data and cloud computing are beginning to emerge. As a result, the demand for high data‐storage density is becoming more and more urgent. In the past 10 years, data‐storage density has been greatly improved by reducing the size of memory cells. However, as semiconductor technology nodes have shrunk, a number of problems have appeared in metal–oxide–semiconductor field‐effect transistor (MOSFET)‐based memory cells, such as gate‐induced drain leakage, drain‐induced barrier lowering, and reliability issues. Fortunately, due to their atomic thickness, high mobility, and sustainable miniaturization properties, 2D atomic crystals (2D materials) are considered the most promising substitute for silicon to solve those issues. This review investigates the use of 2D materials in nonvolatile and volatile memories, including MOSFET‐based memory, magnetic random‐access memory, resistive random‐access memory, dynamic random‐access memory, semi‐floating‐gate memory, and other novel memories.

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Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction

Abstract: Graphene and hexagonal boron nitride (hBN) have shown fascinating features in spintronics due to their metallic and tunneling behaviors, respectively. In this work, we report for the first time room temperature spin valve effect in NiFe/Gr–hBN/Co configuration.

Cited by 38 publications

References 40 publications

Spin Valve Effect of 2D‐Materials Based Magnetic Junctions

Spin Valve Effect of 2D‐Materials Based Magnetic Junctions

2D-MTJs: introducing 2D materials in magnetic tunnel junctions

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

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