Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si_1−x−yGe_xC_y Thin Films on Si(100) Substrate

Abstract

The thermally oxidized Si,.-,yGeCy thin films were grown on silicon substrates by Plasma-enhanced Chemical Vapor Deposition (PECVD) and then wet oxidized at 800°C for 20 minutes. Photoluminescence spectra of the samples were measured at room temperature under 250nm excitation. Two ultraviolet photoluminescence bands with the peaks at -370nm and -396nm were observed in the oxidized samples. Possible mechanism of this photoluminescence is discussed.