Rosette Microstructure in Indented (001) GaAs Single Crystals and the α/β Asymmetry

Levade, C.; Vanderschaeve, G.

doi:10.1002/(sici)1521-396x(199901)171:1<83::aid-pssa83>3.0.co;2-c

Cited by 29 publications

(14 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Actually, the load required to systematically nucleate the first dislocations in scratching (0.93 mN) is more than twice lower compared to the one in indentation (2.27 mN). These results are consistent with the literature, 16,17,22,54,55 and this behavior was explained via stress concentration induced due to either tip imperfection or surface inhomogeneities or a combination between them. 16,17 Then, based on the shear stress yield criterion, 56 the relation between the yield stress in tension (r Yield ) and in shear (s max ) is known to be r Yield 5 2ÁMax(s max ), 14 This difference can be easily explained by the fact that Patriarche et al evaluated the yield stress of InP in a fully plastic regime.…”

Section: Discussionsupporting

confidence: 93%

Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

et al. 2011

View full text Add to dashboard Cite

Nanoindentation and nanoscratching of an indium phosphide (InP) semiconductor surface was investigated via contact mechanics. Plastic deformation in InP is known to be caused by the nucleation, propagation, and multiplication of dislocations. Using selective electrochemical dissolution, which reveals dislocations at the semiconductor surface, the load needed to create the first dislocations in indentation and scratching can be determined. The experimental results showed that the load threshold to generate the first dislocations is twice lower in scratching compared to indentation. By modeling the elastic stress fields using contact mechanics based on Hertz's theory, the results during scratching can be related to the friction between the surface and the tip. Moreover, Hertz's model suggests that dislocations nucleate firstly at the surface and then propagate inside the bulk. The dislocation nucleation process explains the pop-in event which is characterized by a sudden extension of the indenter inside the surface during loading.

show abstract

Section: Discussionsupporting

confidence: 93%

Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

et al. 2011

View full text Add to dashboard Cite

show abstract

“…Therefore, their Burgers vector is determined to be parallel to the indented surface and parallel to the extending direction. In fact, we observed here the ®rst development of rosette arms that can be easily observed under higher indenting loads (Warren et al 1984, Levade and Vandershaeve 1999.…”

Section: …1 †supporting

confidence: 59%

Onset of plasticity in a Σ = 5 GaAs compliant structure

Bourhis¹,

Patriarche²

2001

Philosophical Magazine Letters

View full text Add to dashboard Cite

Compliant structures have been fabricated in which a thin GaAs layer (thickness between 10 and 20 nm) was bonded on top of a GaAs substrate with a large twist angle (about 37°). This twist angle value was chosen so that the energy of the boundary (coincident boundary of type Sˆ5 …001 †) was minimized. The structure of the interface was characterized and the onset of plasticity in such a compliant substructure was investigated using nanoindentation that allowed the low-load deformation regime to be observed. The results are compared with those obtained under the same conditions on a GaAs bulk substrate alone. No plastic zone was observed by transmission electron microscopy in the compliant structure under loads below 0.25 mN while, under the same loads, plastic deformation was observed in the bulk substrate. For higher loads (2 mN), plastic-¯ow enhancement was observed in the compliant structure. The results are discussed in the light of the arrangement of dislocations observed in the plastic zones. } 1. Introduction Heteroepitaxy of III±V semiconductors is commonly used to fabricate electronic and optoelectronic devices that require materials of high structural quality. Above a critical thickness of the layers (which decreases rapidly with increasing mis®t), the epitaxial layers relax plastically through the introduction of mis®t dislocations at the interface. Unfortunately, this relaxation process also generates a large density of threading dislocations extending from the interface with the substrate to the top surface of the heterostructure. These dislocations adversely a ect the performance of the devices. The various procedures tried to eliminate the dislocations in standard epitaxy have so far remained insu ciently e ective.The compliant substrate was introduced to overcome this problem. The original idea was to relax the mis®t strain in a small region underneath the active region. The ideal situation is a free-standing layer set on the original substrate that can deform elastically, or even plastically, to relax the mis®t strain between the substrate and the Philosophical Magazin e Letters ISSN

show abstract

“…Indentation studies have been used to elucidate the inter-relationship between mechanical and electrical properties. Much work has been devoted to link the measured characteristics (hardness, rosette arm length) to the deformation temperature [1], doping [2], surface type [3] and indenter orientation [4,5]. The principal techniques for mechanical characterization at submicrometer depths include the following: scratch hardness testing and the measurement of the distribution and movement of dislocation as a function of applied load [6,7].…”

Section: Introductionmentioning

confidence: 99%

Mechanical properties of some binary, ternary and quaternary III–V compound semiconductor alloys

Navamathavan¹,

Arivuoli²,

Attolini³

et al. 2007

Physica B: Condensed Matter

View full text Add to dashboard Cite

Rosette Microstructure in Indented (001) GaAs Single Crystals and the α/β Asymmetry

Cited by 29 publications

References 18 publications

Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

Onset of plasticity in a Σ = 5 GaAs compliant structure

Mechanical properties of some binary, ternary and quaternary III–V compound semiconductor alloys

Contact Info

Product

Resources

About