Rotation‐Misfit‐Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition‐Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

Heo, Heeok; Sung, Ji Ho; Jin, Guang; Ahn, Ji‐Hoon; Kim, Kyungwook; Lee, Myoung-Jae; Cha, Soonyoung; Choi, Hyunyong; Jo, Moon‐Ho

doi:10.1002/adma.201500846

Cited by 125 publications

(129 citation statements)

References 46 publications

(48 reference statements)

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“…The variation of size and thickness of WS 2 flakes in the previous discussion can be easily understand by the adsorption/desorption and the dynamics of surface diffusion of precursor species on the substrate [37]. If the growth temperature is too low, then S-precursors and WO 3 -precursors have a low surface diffusion rate and the adsorption energy is not sufficient [38,39].…”

Section: Resultsmentioning

confidence: 99%

Controlled synthesis and mechanism of large-area WS2 flakes by low-pressure chemical vapor deposition

Wang

Meng

et al. 2017

J Mater Sci

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WS 2 flakes have been grown successfully on SiO 2 (300 nm)/Si substrate via traditional low-pressure chemical vapor deposition method. We studied the controllable growth of WS 2 flakes on three of the growth parameters: the time of S-precursor introduction, the temperature of WO 3 precursor and the growth temperature. The as-prepared products were characterized by X-ray photoemission spectroscopy, Raman spectra and atomic force microscopy. It is found that the morphologies of WS 2 flakes and the products are highly dependent on the concentration of S-precursor, W-precursor and the ratio of W atoms to S atoms, while large-area WS 2 flakes up to 160 lm can be obtained. If the ratio of W/S is B1:2, we obtain triangular and hexagonal WS 2 flakes. On the contrary, if the ratio of W/S is [1:2, besides WS 2 flakes, W nanowires will be formed owing to the superfluous W atoms. This study can provide an important and practical guide to preparing large-area and high-quality two-dimensional transition metal dichalcogenides materials.

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Section: Resultsmentioning

confidence: 99%

Controlled synthesis and mechanism of large-area WS2 flakes by low-pressure chemical vapor deposition

Wang

Meng

et al. 2017

J Mater Sci

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“…Due to the special crystal structure, it is extremely challenging to construct TMDbased epitaxial heterostructure with edge contact (i.e., lateral heterostructures) since very few materials have lattice parameters matching the edges of TMDs [24,[108][109][110][111]. So far, most of the reported lateral heterostructures are limited to two TMD components, such as MoS 2 -MoSe 2 and MoS 2 -WS 2 [112][113][114][115][116]. Recently, our group reported a new type of lateral heterostructure consisting of layered TMD material and another non-layered nanomaterial [117].…”

Section: D Nanostructures Grown On 1d Seedsmentioning

confidence: 99%

Wet-Chemical Synthesis and Applications of Semiconductor Nanomaterial-Based Epitaxial Heterostructures

Chen

et al. 2019

Nano-Micro Lett.

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HIGHLIGHTS• The synthesis of semiconductor nanomaterial-based epitaxial heterostructures by wet-chemical methods is introduced. Various architectures based on different kinds of seeds or templates are illustrated, and their growth mechanisms are discussed in detail.• The applications of epitaxial heterostructures in optoelectronics, thermoelectrics, and catalysis are discussed. ABSTRACTSemiconductor nanomaterial-based epitaxial heterostructures with precisely controlled compositions and morphologies are of great importance for various applications in optoelectronics, thermoelectrics, and catalysis. Until now, various kinds of epitaxial heterostructures have been constructed. In this minireview, we will first introduce the synthesis of semiconductor nanomaterial-based epitaxial heterostructures by wet-chemical methods. Various architectures based on different kinds of seeds or templates are illustrated, and their growth mechanisms are discussed in detail. Then, the applications of epitaxial heterostructures in optoelectronics, catalysis, and thermoelectrics are described. Finally, we provide some challenges and personal perspectives for the future research directions of semiconductor nanomaterial-based epitaxial heterostructures. C ata lys is L i g h te m it ti ng dev ic e P h o t o v ol taic de v ic e T h e r m al elect ic d e v i c e Semiconductor Epitaxial Heterostructuressolution containing Cd-oleate [33]. The thermal decomposition of (NH 4 ) 2 MoS 4 or (NH 4 ) 2 WS 4 not only provided the sulfur source for the nucleation and growth of CdS seeds, but also acted as the precursor which decomposed to form MoS 2 or WS 2 nanosheets (NSs). Hydro-/Solvothermal StrategyEpitaxial heterostructures can also be prepared by the hydro-/solvothermal strategy, a typical wet-chemical synthesis method, which uses water or organic solvents as the reaction medium in a sealed steel pressure reactor with Teflon liner. The chemical reaction can proceed at the temperature higher than the boiling point of the solvent. Under such condition, high pressure can be generated, promoting the reaction and improving the crystallinity of the synthesized NCs [34]. The main advantage of the hydro-/solvothermal strategy is that almost all precursors can dissolve in the solvent at high pressure and temperature. Besides that, the merits of hydro-/solvothermal strategy, including the easy operability, high yield, and low cost, make it an attractive choice for constructing epitaxial heterostructures. As a typical example, Wang et al. reported the epitaxial growth of α-Fe 2 O 3 on CdS nanowires (NWs) via a two-step solvothermal process using N,N-dimethylformamide as solvent and poly(vinylpyrrolidone) as surfactant [35].Even though hydro-/solvothermal strategy has been widely used to prepare epitaxial heterostructures, it has disadvantages as well. Firstly, it is impossible to observe the reaction process in situ since the reaction occurs in a sealed autoclave, making it difficult to propose the growth mechanism. Besides, since the hydro-/solvothermal r...

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“…Figure S14(a) shows the dark field scanning transmission electron microscopy (DF-STEM) image of the domain, in which the inner darker MoS 2 and the outer brighter WS 2 exhibit obvious contrast. Meanwhile, the selected area electron diffraction (SAED) patterns collected from MoS 2 , WS 2 (shown in SI 14) and the stitching interface (the inset of figure 4(e)) share the same hexagonal unitcell orientations, demonstrating the high crystalline quality with free-misfit rotation [16]. HRTEM images for both sides of MoS 2 -WS 2 heterostructure show the periodic atom arrangements as shown in figures 4(f), (g), which is corresponding to figure 1.…”

Section: Growth Of Mos 2 -Ws 2 Heterostructuresmentioning

confidence: 99%

“…For the two-step method, the inside core is grown first and the outside edge is grown afterwards [14][15][16][17][18]. Li et al reported the growth of a WSe 2 -MoS 2 p-n junction by sequent growth of WSe 2 and MoS 2 using low pressure CVD [7].…”

Section: Introductionmentioning

confidence: 99%

NaCl-assisted one-step growth of MoS₂–WS₂in-plane heterostructures

Wang¹,

Xie²,

Wang³

et al. 2017

Nanotechnology

100

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Transition metal dichalcogenides (TMDs) have attracted considerable interest for exploration of next-generation electronics and optoelectronics in recent years. Fabrication of in-plane lateral heterostructures between TMDs has opened up excellent opportunities for engineering two-dimensional materials. The creation of high quality heterostructures with a facile method is highly desirable but it still remains challenging. In this work, we demonstrate a one-step growth method for the construction of high-quality MoS2–WS2 in-plane heterostructures. The synthesis was carried out using ambient pressure chemical vapor deposition (APCVD) with the assistance of sodium chloride (NaCl). It was found that the addition of NaCl played a key role in lowering the growth temperatures, in which the Na-containing precursors could be formed and condensed on the substrates to reduce the energy of the reaction. As a result, the growth regimes of MoS2 and WS2 are better matched, leading to the formation of in-plane heterostructures in a single step. The heterostructures were proved to be of high quality with a sharp and clear interface. This newly developed strategy with the assistance of NaCl is promising for synthesizing other TMDs and their heterostructures.

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Rotation‐Misfit‐Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition‐Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

Cited by 125 publications

References 46 publications

Controlled synthesis and mechanism of large-area WS2 flakes by low-pressure chemical vapor deposition

Controlled synthesis and mechanism of large-area WS2 flakes by low-pressure chemical vapor deposition

Wet-Chemical Synthesis and Applications of Semiconductor Nanomaterial-Based Epitaxial Heterostructures

NaCl-assisted one-step growth of MoS₂–WS₂in-plane heterostructures

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Rotation‐Misfit‐Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition‐Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

Cited by 125 publications

References 46 publications

Controlled synthesis and mechanism of large-area WS2 flakes by low-pressure chemical vapor deposition

Controlled synthesis and mechanism of large-area WS2 flakes by low-pressure chemical vapor deposition

Wet-Chemical Synthesis and Applications of Semiconductor Nanomaterial-Based Epitaxial Heterostructures

NaCl-assisted one-step growth of MoS2–WS2in-plane heterostructures

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NaCl-assisted one-step growth of MoS₂–WS₂in-plane heterostructures