Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

C, Liu; Lee, M.H.; Chen, Miin-Jang; Lin, Ching−Fuh; Chern, Ming–Yau

doi:10.1109/55.887479

Cited by 34 publications

(29 citation statements)

References 12 publications

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“…It has been argued that the luminescence efficiency could be enhanced with respect to that for bulk silicon because the accumulation of a high hole concentration confined to the interface and also due to symmetry breaking by the stress that exists at the Si/SiO 2 interface; both factors can contribute to an enhanced band gap luminescence. It has also been suggested that interface scattering, which can be controlled by interface roughness, can yield orders of magnitude enhancement [21]. As we will see, we observe this luminescence to a varying degree in all the MOS structures we address here with the different oxides and thermal treatments.…”

Section: Resultssupporting

confidence: 65%

Infrared electroluminescence from a Si MOS structure with Ge in the oxide

Mayandi¹,

Finstad²,

Foss³

et al. 2007

Journal of Luminescence

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Section: Resultssupporting

confidence: 65%

Infrared electroluminescence from a Si MOS structure with Ge in the oxide

Mayandi¹,

Finstad²,

Foss³

et al. 2007

Journal of Luminescence

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“…Structures with a higher surface roughness yielded more efficient BB luminescence [12]. An approximate two-order increase in magnitude in electroluminescence was reported for MOS tunnelling diodes for oxide with rough interface (grown at 900°C) than those with smoother one (grown at 1000°C).…”

Section: Introductionmentioning

confidence: 84%

“…As we already mentioned above the surface roughness can strongly influence the efficiency of the luminescence [12]. Indeed, in case of high surface recombination, a strong field in the semiconductor is necessary for an efficient barrier, driving the minority carriers into the bulk.…”

Section: Figurementioning

confidence: 99%

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Silicon based light emitter utilizing tunnel injection of excess carriers via MIS structure

Arguirov¹,

Wenger²,

Lukosius³

et al. 2011

Phys. Status Solidi (c)

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We report on electro‐luminescence from metal‐insulator‐semiconductor diodes (MISLED). MISLEDs prepared on silicon with HfO2 layers of different thicknesses were investigated and their properties compared with such prepared by using SiO2 insulator layer. The role of the insulator layer was studied in view of the efficiency of the band‐to‐band radiation from silicon. We show that the luminescence efficiency depends on the dielectric constant of the insulator as well as on its ability to conduct carriers by tunnelling. Efficiency enhancement of 3.3 times was detected when the SiO2 insulator was substituted by HfO2 in the MIS emitter. Optimal injection current exists, which leads to a maximal efficiency of the luminescence. The optimal current depends strongly on the thickness of the oxide. We relate the existence of an optimal current with the depth at which the injected minority carriers recombine radiatively. Thus the electric field in the semiconductor and the surface recombination are the factors determining the optimal injection (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…As early as 1968, electroluminescence (EL) of a metal insulator semiconductor (MIS) diode at 77 K was demonstrated using the tunneling effect [9]. Recently, electroluminescence from the silicon band edge has been reported from electron-hole plasmas in the accumulation region of a MOS tunneling diode [10]. More recently, we have demonstrated that high-quality b-FeSi 2 precipitates can be formed by low-energy (<100 keV) iron implantation at low temperature ($À120°C), followed by rapid thermal annealing [11].…”

Section: Introductionmentioning

confidence: 99%